Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effect of annealing on the electrical properties of amorphous oxide semiconductor $InGaZnO_4$ films

열처리에 의한 비정질 산화물 반도체 $InGaZnO_4$ 박막의 전기적 특성 변화 연구

  • 배성환 (서울대학교 공과대학 재료공학부) ;
  • 구현 (서울대학교 공과대학 재료공학부) ;
  • 유일환 (서울대학교 공과대학 재료공학부) ;
  • 정명진 (서울대학교 공과대학 재료공학부) ;
  • 강석일 (전북대학교 물리학과) ;
  • 박찬 (서울대학교 공과대학 재료공학부)
  • Published : 2009.07.14
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Abstract

Amorphous oxide semiconductor $InGaZnO_4$(IGZO) is a very promising candidate of channel layer in transparent thin film trasisitor(TTFT) because of its high mobility and high transparency in visible light region. Amorphous IGZO films were deposited at room temperature on a fused silica substrate using pulsed laser deposition method. In-situ post annealing was carried out at 150-450C right after film deposition. The $O_2$ partial pressures during the deposition and the post annealing was fixed to 10mTorr. The electron transport properties of the amorphous IGZO films were improved by thermal annealing. The temperature range in which the improvement of the electrical properties, was 150C~300C.

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