• 제목/요약/키워드: in-field $I_c$

검색결과 1,088건 처리시간 0.026초

YBCO 박막도체의 비틀림 변형률에 따른 임계전류 열화거동 ($I_c$ Degradation Behavior in YBCO Coated Conductors under Torsional Strain)

  • 신형섭;존얀 디존;오상수;김태형;고락길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.93-94
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    • 2006
  • The $I_c$ degradation behavior of YBCO CC tapes due to torsional deformation has been investigated. Particularly, the influence of torsion angle on the $I_c$ in HTS tapes was examined at 77K (self-field). At low torsional angles or shear strains, the $I_c$ degradation was small and gradual. Also, a good consistency of the $I_c$ degradation behaviors was found along the longitudinal direction under torsion when multiple voltage terminals were adopted for investigating the homogeneity of the $I_c$ degradation.

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Bi$_2Sr_2CaCu_2O_{8+{\delta}}$ Intrinsic 조셉슨 접합의 자기장 효과 (Magnetic field behavior of Bi$_2CaCu_2O_{8+{\delta}}$ Intrinsic Josephson Junctions)

  • 이주형;이헌주;정연욱;이수연;김정구
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.178-184
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    • 1999
  • We have measured I-V characteristics of Bi$_2Sr_2CaCu_2O_{8+{\delta}}$ mesa containing a small number of intrinsic stacked Josephson junctions in a magnetic field. We fabricated mesa with an area of 40${\times}$40 ${\mu}$m$^2$ containing 3${\sim}$20 intrinsic junctions. We applied magnetic field perpendicular to He CuO$_2$ planes up to 5T. We observed flux-flow branches and flux-flow steps in the I-V characteristics which might be due to collective motion of Josephson vortices in the long junction limit. In a parallel field, critical current I$_c$ varies as I$_c$(B) ${\sim}$ exp(-B/B$_0$), where B$_0$ is about 2T, which is consistent with the theoretical model. DC and AC intrinsic Josephson effects are also discussed.

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고온 초전도 tape의 임계전류 저하에 따른 교류손실 특성 (AC loss Characteristics under Critical Current Degradation of HTS Tapes)

  • 김해준;조전욱;김재호;심기덕;곽동순;배준한;김해종;성기철
    • 한국초전도ㆍ저온공학회논문지
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    • 제7권3호
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    • pp.29-33
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    • 2005
  • Critical current$(I_c)$ degradation of High $T_c$ Superconducting(HTS) tapes and AC loss under mechanical load is one of the hottest issues in HTS development and application. Mechanical load reduces the critical current of superconducting wire, and the $I_c$ degradation affects the AC loss of the wire. We measured the $I_c$ degradation and AC loss under tension and bending of Bi-2223 tapes made by 'Powder-in-Tube' technique at 77K with self-field. Also, we have studied the frequency characteristics on self-field AC loss in multi-filamentary Bi-2223/Ag tape at 77K. The measurement results and discussions on the relationship between $I_c$ degradation and AC loss are presented.

High Exchange Coupling Field and Thermal Stability of Antiferromagnetic Alloy NiMn Spin Valve Films

  • Lee, N. I.;J. H. Yi;Lee, G. Y.;Kim, M. Y.;J. R. Rhee;Lee, S. S.;D. G. Hwang;Park, C. M.
    • Journal of Magnetics
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    • 제5권2호
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    • pp.50-54
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    • 2000
  • NiMn-pinned spin valve films consisting of a layered glass/NiFe/Co/Cu/Co/NiFe/NiMn/Ta stack were made by do magnetron sputtering. After deposition, the structure was annealed in a series of cycles each including three hours at $220^\circ C, 2\times10^{-6}$ Torr, in a field of 350 Oe, to create an ordered antiferromagnetic structure in the NiMn layer and produce a strong unidirectional pinning field in the pinned magnetic layer, Optimum spin valve properties were obtained after seven annealing cycles, or 21 hours at $220^\circ C$, and were : MR ratio 1%, exchange coupling field 620 Oe, and coercivity of pinned layer 250 Oe. The exchange coupling field remained constant up to an operating temperature of $175^\circ C$, and the blocking temperature was about $380^\circ C$.

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Lorentz Force Density Distribution of a Current Carrying Superconducting Tape in a Perpendicular Magnetic Field

  • Yoo, J.;Kwak, K.;Rhee, J.;Park, C.;Youm, D.;Park, B.J.;Han, Y.H.
    • 한국초전도ㆍ저온공학회논문지
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    • 제12권4호
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    • pp.13-16
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    • 2010
  • The Lorentz force distribution of a high $T_c$ superconducting tape with increasing transport currents in magnetic field ($H_a$) was visualized. The external magnetic field was applied normally to the coated conductor tape surface after zero-field cooling, and the transport current ($I_a$) was increased stepwise from 0 to 90 % of the values of the critical current ($I_c$ ($H_a$)) at applied filed, Ha. The field distribution (H(x)) near the sample surface across the tape width (2w) was measured using the scanning Hall probe method. Applying an inversion to the measured field distribution, we obtained the underlying current distribution (J(x)), from which the magnetic induction, B(x) was calculated with Biot-Savart law. Then Lorentz force per unit length was calculated using F(x)=J(x)${\times}$B(x), which appears to be very inhomogeneous along the tape width due to the complicated distributions of J(x) and B(x).

The Analysis of Current Limiting Performance in a High-$T_c$ Superconductor using Flux-Lock Concepts

  • 임성훈;최효상;김영순;이성룡;한병성
    • Progress in Superconductivity
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    • 제3권2호
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    • pp.229-234
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    • 2002
  • In this paper, we analyzed the fault current performance in a $high-T_{c}$ superconductor(HTS) which was installed on flux-lock reactor with an external magnetic field coil covering the HTS. In this HTS fault current limiter using flux-lock concepts, the initial limiting current level can be controlled by adjusting the inductance of the coils. Furthermore, the current limiting characteristics of $high-T_{c}$ superconducting FCL can be improved by applying the external magnetic field into the $high-T_{c}$ superconductor. This paper discusses current limiting performance according to the inductance of the coil 1 in two cases with ac magnetic field coil or not and suggests the methods to improve the current limiting factor $P_{limit}$, which is defined as the ratio of the limited current $I_{FCL}$ at the current limiting phase to the prospective short -circuit current $I_{PSC}$.TEX> PSC/.

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고강도 결합 매입말뚝 흙막이 공법의 현장적용성 검토에 관한 연구 (A Study on the Field Application of High Strength Joint Buried Pile Retaining Wall Method)

  • 이광남;김대현
    • 지질공학
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    • 제32권4호
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    • pp.671-684
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    • 2022
  • 본 연구에서는 고강도 결합 매입말뚝 흙막이 공법의 안정성을 검증하고 그에 따른 현장 적용성을 확인하고자 하였다. 따라서 C.I.P 흙막이 공법과 고강도 결합 매입말뚝 흙막이 공법을 수치해석으로 비교·분석하였으며, 고강도 결합 매입말뚝 흙막이 공법이 적용된 현장의 계측 Data와 수치해석 결과를 비교·분석하여 지반거동 및 고강도 결합 매입말뚝 흙막이 공법의 안정성 및 현장 적용성을 검증하고자 하였다. 실험결과, 단면력의 경우 고강도 결합 매입말뚝 흙막이벽이 C.I.P 흙막이벽보다 변위는 최소 13.6%~최대 19.7%가 감소하였고, 전단력은 최소 0.7%~최대 4.7% 정도 증가하였다. 또한 휨모멘트의 경우 최소 4.5%~최대 8.8%정도 증가하는 경향을 보였다. 굴착주변 지반의 침하량을 검토한 결과, C.I.P 흙막이벽이 최대 46.89 mm, 고강도 결합 매입말뚝 흙막이벽이 39.37 mm로 산정되었으며, 고강도 결합 매입말뚝이 C.I.P 흙막이벽에 비해 최대 침하량이 약 17% 정도 작게 산정되었다. 현장지반을 대상으로 탄소성보법에 의해 산정된 최대 휨모멘트와 전단력을 적용하여 고강도 결합 매입말뚝 흙막이벽체를 설계한 결과, 모두 탄성영역 내에서 부재력이 발생되어 안전한 것으로 나타났다.

EIC integrated DCS with single console

  • Kawahara, Hiroshi;Hwa, Hong-Tae
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1988년도 한국자동제어학술회의논문집(국제학술편); 한국전력공사연수원, 서울; 21-22 Oct. 1988
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    • pp.928-933
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    • 1988
  • Control technology has been making remarkable progress in electrical control (E), instrumentation & control (I) and computer control (C) field respectively. In order to rationalize system engineering and simplify system configuration and operation work, so called, EIC are now to be integrated into one system. FUJI has developed it's own E, I&C integrated system, to meet above mentioned market requirements of variety. This paper describes basic concept of FUJI's Integrated Man-Machine Interface, hereinafter called SINGLE CONSOLE, from some view points of E, I, C integration technology.

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Electrical Properties of CuPc FET with Different Substrate Temperature

  • Lee, Ho-Shik;Park, Yong-Pil;Cheon, Min-Woo
    • Transactions on Electrical and Electronic Materials
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    • 제8권4호
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    • pp.170-173
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    • 2007
  • Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated the organic field-effect transistor based a copper phthalocyanine (CuPc) as an active layer on the silicon substrate. The CuPc FET device was made a topcontact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in CuPc FET and we calculated the effective mobility with each device. Also, we observed the AFM images with different substrate temperature.