• Journal of Ginseng Research
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• v.44 no.2
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• pp.300-307
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• 2020

Background: Emerging evidence suggests that endothelial-to-mesenchymal transition (EndMT) in endothelial dysfunction due to persistent inflammation is a key component and emerging concept in the pathogenesis of vascular diseases. Ginsenoside Rg3 (Rg3), an active compound from red ginseng, has been known to be important for vascular homeostasis. However, the effect of Rg3 on inflammation-induced EndMT has never been reported. Here, we hypothesize that Rg3 might reverse the inflammation-induced EndMT and serve as a novel therapeutic strategy for vascular diseases. Methods: EndMT was examined under an inflammatory condition mediated by the NOD1 agonist, γ-d-glutamyl-meso-diaminopimelic acid (iE-DAP), treatment in human umbilical vein endothelial cells. The expression of EndMT markers was determined by Western blot analysis, real-time polymerase chain reaction, and immunocytochemistry. The underlying mechanisms of Rg3-mediated EndMT regulation were investigated by modulating the microRNA expression. Results: The NOD1 agonist, iE-DAP, led to a fibroblast-like morphology change with a decrease in the expression of endothelial markers and an increase in the expression of the mesenchymal marker, namely EndMT. On the other hand, Rg3 markedly attenuated the iE-DAP-induced EndMT and preserved the endothelial phenotype. Mechanically, miR-139 was downregulated in cells with iE-DAP-induced EndMT and partly reversed in response to Rg3 via the regulation of NF-κB signaling, suggesting that the Rg3-miR-139-5p-NF-κB axis is a key mediator in iE-DAP-induced EndMT. Conclusion: These results suggest, for the first time, that Rg3 can be used to inhibit inflammation-induced EndMT and may be a novel therapeutic option against EndMT-associated vascular diseases.

• Korean Journal of Microbiology
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• v.29 no.4
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• pp.203-208
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• 1991

The dapA-complementing gene (L-2, 3-dihydrodipicolinate synthetase: DHDP synthetase, dapA) has been cloned by using a cosmid genomic bank of Corynebacterium glutamicum JS231 that is a lysine overproducer, AEC (s-(2-aminoethyl)-L-cysteine) resistant mutant. By enzymatic deletion analysis, the DNA region complementing the escherichia coli dapA host could be confined to 4.5kb SalI-generated DNA fragment. This DNA fragment was inserted into the C. glutamicum/E. coli shuttle vector pECCG117 to construct pDHDP5812. The specific activity of DHDP synthetase detected in C. glutamicum JS231/pDHDP5812 was increased about 10 fold above that of C. glutamicum JS231. The addition of leucine during growth did not repress the expressin of dapA, and the enzyme activity was not inhibited by lysine.

• Journal of Microbiology and Biotechnology
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• v.22 no.5
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• pp.575-584
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• 2012

Listeria monocytogenes is an important foodborne pathogen that comprises four genetic lineages: I, II, III, and IV. Of these, lineage II is frequently recovered from foods and environments and responsible for the increasing incidence of human listeriosis. In this study, the phylogenetic structure of lineage II was determined through sequencing analysis of the ascB-dapE internalin cluster. Fifteen sequence types proposed by multilocus sequence typing based on nine housekeeping genes were grouped into three distinct sublineages, IIA, IIB, and IIC. Organization of the ascB-dapE internalin cluster could serve as a molecular marker for these sublineages, with inlGHE, inlGC2DE, and inlC2DE for IIA, IIB, and IIC, respectively. These sublineages displayed specific genetic and phenotypic characteristics. IIA and IIC showed a higher frequency of recombination (${\rho}/{\theta}$). However, recombination events had greater effect (r/m) on IIB, leading to its high nucleotide diversity. Moreover, IIA and IIB harbored a wider range of internalin and stress-response genes, and possessed higher nisin tolerance, whereas IIC contained the largest portion of low-virulent strains owing to premature stop codons in inlA. The results of this study indicate that IIA, IIB, and IIC might occupy different ecological niches, and IIB might have a better adaptation to a broad range of environmental niches.

• Journal of the Optical Society of Korea
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• v.17 no.6
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• pp.543-547
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• 2013

A temperature dependent (10K-290K) photoluminescence (PL) study for two differently prepared ZnO thin films (as-grown and O-plasma treated) is presented. Four characteristic peaks were identified for both samples: (i) neutral donor-bound excitons ($D^oX$), (ii) two electron satellites (TES), (iii) phonon replica of $D^oX$ ($D^oX$-1LO), and (iv) donor-acceptor pair transition (DAP). As the sample temperature increased, $D^oX$-1LO and DAP transitions became indistinct. This was accompanied by newly-rising emission of free electron-acceptor transitions (e, $A^o$). The spectral evolution with temperature for as-grown samples also showed the optical emission from free excitons, which became dominant at higher temperatures. Some features related to O-plasma were identified in PL spectra: (i) different positions of TES transitions (28meV lower than $D^oX$ for as-grown samples and 35meV for O-plasma treated samples), (ii) the decrease of spectral intensity in both emissions of $D^oX$ and DAP after O-plasma treatment, and (iii) no noticeable transition from free excitons after the O-plasma treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.189-198
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• 2000

The stochiometric mixture of evaporating materials for the $CuGaSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0}$ and $c_0$ were 5.615 $\AA$ and 11.025 $\AA$, respectively. To obtains the single crystal thin films, $CuGaSe_2$mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5$\mu\textrm{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. The optical energy gaps were found to be 1.68 eV for CuGaSe$_2$sing1e crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by $\alpha$ = $9.615{\times}10^{-4}$eV/K, and $\beta$ = 335 K. From the photocurrent spectra by illumination of polarized light of the $CuGaSe_2$single crystal thin films. We have found that values of spin orbit coupling $\Delta$So and crystal field splitting $\Delta$Cr was 0.0900 eV and 0.2498 eV, respectively. From the PL spectra at 20 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626 eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352 eV, 0.0932 eV, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.355-355
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• 2012

Si (111) 기판 위에 polystyrene (PS) bead를 사용하여 만들어진 약 100 nm 나노 구멍에 GaN나노선을 molecular beam epitaxy 법으로 성장하였다. 성장 온도와 III/V 비율 변화에 대하여 성장된 GaN 나노선의 모양과 광학적 특성은 scanning electron microscopy (SEM)와 photoluminescence (PL) 등으로 조사하였으며, InN/GaN 이종접합 및 InGaN p-n 다이오드구조를 성장하여 atomic force microscopy의 tip 접촉방법으로 전기적 특성을 조사하였다. PL 측정 결과 성장온도가 높아지면 Ga 빈자리와 관계된 3.28 eV의 donor acceptor pair (DAP) 신호와 3.42 eV의 stacking faults (SF) 결함에 기인된 발광 신호세기가 감소하는 결과를 SEM으로부터 나노선 폭 및 길이는 좁아지면서 짧아지는 것을 관측하였다. 또한 nitrogen 원자양이 증가하면서 Ga 빈자리와 관련된 3.28 eV DAP 신호가 증가하는 것을 관측하였다. 이들 결과로부터 GaN 나노선의 SF 발광 신호관련 원인에 대하여 논의 하였다. AFM을 이용한 I-V 측정으로부터 성장조건 변화에 따른 GaN 나노선 및 p-n 접합 나노선의 전도 특성을 조사하여 나노선의 소자 응용에 대한 기본적인 물리특성을 규명하였다.

• Korean Journal of Crystallography
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• v.11 no.3
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• pp.137-146
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• 2000

The stoichiometric mix of evaporating materials for he CuInS₂ single crystal thin films was prepared. To obtain the single crystal thin films, CuINS₂ mixed crystal was deposited on etched semi-insulator GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperature were 640℃ and 430℃, respectively and the thickness of the single crystal thin films was 2 ㎛. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility deduced from Hall data are 9.64x10/sup 22//㎥ and 2.95x10/sup -2/ ㎡/V·s, respectively at 293 K. he optical energy gap was found to be 1.53 eV at room temperature. From the photocurrent spectrum obtained by illuminating perpendicular light on the c-axis of the thin film, we have found that the values of spin orbit coupling splitting ΔSo and the crystal field splitting ΔCr were 0.0211 eV and 0.0045 eV at 10K, respectively. From PL peaks measured at 10K, were can assign the 807.7 nm (1.5350 eV) peak to E/sub x/ peak of the free exciton emission, the 810.3 nm(1.5301 eV) peak to I₂ peak of donar-bound exciton emission and the 815.6 nm(1.5201 eV) peak to I₁ peak of acceptor-bound excition emission. In addition, the peak observed at 862.0 nm(1.4383 eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• The Bulletin of The Korean Astronomical Society
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• v.43 no.2
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• pp.57.2-57.2
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• 2018

In astronomical observation, sequential device control and real-time data processing are important to maximize observing efficiency. We have developed series of automatic observing software (KAOS, KHU Automatic Observing Software), e.g. KAOS30 for the 30 inch telescope in the McDonald Observatory and KAOS76 for the 76 cm telescope in the KHAO. The series consist of four packages: the DAP (Data Acquisition Package) for CCD Camera control, the TCP (Telescope Control Package) for telescope control, the AFP (Auto Focus Package) for focusing, and the SMP (Script Mode Package) for automation of sequences. In this poster, we introduce KAOS10 which is being developed for controlling a small telescope such as aperture size of 10 cm. The hardware components are the QHY8pro CCD, the QHY5-II CMOS, the iOptron CEM 25 mount, and the Stellarvue SV102ED telescope. The devices are controlled on ASCOM Platform. In addition to the previous packages (DAP, SMP, TCP), KAOS10 has QLP (Quick Look Package) and astrometry function in the TCP. QHY8pro CCD has RGB Bayer matrix and the QLP transforms RGB images into BVR images in real-time. The TCP includes astrometry function which adjusts the telescope position by comparing the image with a star catalog. In the future, We expect KAOS10 be used on the research of transient objects such as a variable star.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.875-879
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• 2002

$Pb_{1-x}$ $Cd_{x}$ $I_2$ (x=0.0, 0.2, 0.5, 0.7, 0.9, 1.0) single crystals were grown by using Bridgman method and their structural and optical properties were investigated from the measurement of X-ray diffraction, optical absorption and photoluminescence. As-grown single crystals have hexagonal closed packed layered structure. The values of lattice constant c decrease with increasing composition x. Direct and indirect transition optical energy band gaps are calculated from optical absorption spectra measured at room temperature. They increase exponentially from 2.3eV to 3.2 eV with increasing composition x. The energies of photoluminescence peak due to donor bound exciton measured at 6K increase with increasing composition . However, the peak energies of donor-acceptor pair (DAP) are independent of the optical energy band gaps of $Pb_{1-x}$/$Cd_{x}$ $I_2$ single crystals.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.158-158
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• 2003

수평 전기로에서 CuGaTe2 다결정을 합성하여 HWE 방법으로 CuGaTe2 단결정 박막을 반절연성 GaAs(100) 위에 성장하였다. CuGaTe2 단결정 박막은 증발원과 기판의 온도를 각각 67$0^{\circ}C$, 41$0^{\circ}C$로 성장하였다. 이때 단결정 박막의 결정성이 10K에서 측정한 광발광 스펙트럼은 954.5nm (1.2989eV) 근처에서 exciton emission 스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 139arcsec로 가장 작게 측정되어 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Paw방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 8.72$\times$$10^{23}$개/㎥, 3.42$\times$$10^{-2}$$m^2$/V.s였다. 상온에서 CuGaTe2 단결정 박막의 광흡수 특성으로부터 에너지 띠간격이 1.22 eV였다 Band edge에 해당하는 광전도도peak의 온도 의존성은 Varshni 관계식으로 설명되었으며, Varshni 관계식의 상수값은 Eg(0) = 1.3982 eV, $\alpha$= 4.27$\times$$10^{-4}$ eV/K, $\beta$= 265.5 K로 주어졌다. CuGaTe2 단결정 박막의 광전류 단파장대 봉우리들로부터 10K에서 측정된 $\Delta$cr (crystal Field splitting)은 0.0791eV, $\Delta$s.o (spin orbit coupling)는 0.2463eV였다. 10K에서 광발광 봉우리의 919.8nm (1.3479eV)는 free exciton(Ex), 954.5nm (1.2989eV)는 donor-bound exciton 인 I2(DO,X)와 959.5nm (1.2921eV)는 acceptor-bound exciton 인 I1(AO,X) 이고, 964.6nm(1.2853eV)는 donor-acceptor pair(DAP) 발광, 1341.9nm (0.9239eV)는 self activated(SA)에 기인하는 광발광 봉우리로 고찰되었다.