Journal of the Optical Society of Korea

Optical Society of Korea (한국광학회)
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Photoluminescence Study on O-plasma Treated ZnO Thin Films

  • Cho, Jaewon (Department of Electrophysics, Kwangwoon University) ;
  • Choi, Jinsung (Department of Electrophysics, Kwangwoon University) ;
  • Yu, SeGi (Department of Physics, Hankuk University of Foreign Studies) ;
  • Rhee, Seuk Joo (Department of Physics, Hankuk University of Foreign Studies)
  • Received : 2013.08.20
  • Accepted : 2013.10.16
  • Published : 2013.12.25
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Abstract

A temperature dependent (10K-290K) photoluminescence (PL) study for two differently prepared ZnO thin films (as-grown and O-plasma treated) is presented. Four characteristic peaks were identified for both samples: (i) neutral donor-bound excitons ($D^oX$), (ii) two electron satellites (TES), (iii) phonon replica of $D^oX$ ($D^oX$-1LO), and (iv) donor-acceptor pair transition (DAP). As the sample temperature increased, $D^oX$-1LO and DAP transitions became indistinct. This was accompanied by newly-rising emission of free electron-acceptor transitions (e, $A^o$). The spectral evolution with temperature for as-grown samples also showed the optical emission from free excitons, which became dominant at higher temperatures. Some features related to O-plasma were identified in PL spectra: (i) different positions of TES transitions (28meV lower than $D^oX$ for as-grown samples and 35meV for O-plasma treated samples), (ii) the decrease of spectral intensity in both emissions of $D^oX$ and DAP after O-plasma treatment, and (iii) no noticeable transition from free excitons after the O-plasma treatment.

Keywords

References

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