• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.168-171
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• 2002

A SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this thesis. The prototype is fabricated by using the Hynix 0.6$\mu\textrm{m}$ P-substrate twin-well double poly three-metal CMOS Process. The fabricated SSIMT shows that variation of the collector current is extremely linear by varing the magnetic induction from -200mT to 200mT at I$\_$B/=500${\mu}$A, V$\_$CE/=2V and V$\_$SUB/=5V. The relative sensitivity is up to 120%/T. At B = 0, magnetic offset is about 79mT, there relative sensitivity is 30.5%/T. The nonlinearity of the fabricated SSIMT is measured about 1.4%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.443-446
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• 2003

A 2-Dimensional SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this paper. The prototype is fabricated by using the Hynix $0.6{\mu}m$ CMOS Process. The fabricated SSIMT shows that the variation of each collectors current are extremely linear by varing the magnetic induction from -200mT to 200mT at $I_B\;:\;1000{\mu}A,\;V_{CE}\;=\;5V\;and\;V_{SUB}\;=\;5V$. The relative sensitivity is up to 13%/T. At B = 0, magnetic offset is about 40mT, there relative sensitivity is 4.72%/T. The nonlinearity of the fabricated 2-D SSIMT is measured about 1.2%.

• Proceedings of the Korean Magnestics Society Conference
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.66-67
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• 2003

Bismuth (Bi) has been an attractive materials for studying spin dependent transport properties because it shows very large magnetoresistance (MR) resulting from its highly anisotropic Fermi surface, low carrier concentrations, long carrier mean free path 1 and small effective carrier mass m*[1-3]. With all the intriguing properties, difficulty in fabrication of high quality Bi thin films may have prevented extensive application of Bi in magnetic field sensing and spin-injection devices. Previous works found that the surface roughness and small grain size in 100-200 nm of Bi thin film made by evaporation and sputtering are major causes of low MR. Although relatively higher MR in electrodeposited Bi followed by annealing was reported, it still suffers from rough sulfate roughness which is so severs that it is hardly able to make a field sensing and spin-injection device using conventional photolithography process.

• Archives of Pharmacal Research
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• 제27권8호
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• pp.863-866
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• 2004

The effect of substance P (Sub P) injected intrathecally (I.t.) on c-fos mRNA expression in vari-ous tissues was examined in the present study. We found that a single administration of Sub P(0.5 nM) caused an increase of the c-fos mRNA level in the hypothalamic-pituitary-adrenal(HPA) axis, hippocampus, and spinal cord. The time-course study showed that c-fos mRNA level was maximal at 10 min and began to decrease 30 min after the Sub P injection in all tis-sues, and the Sub P-induced increase of the c-fos mRNA level was returned to the control level 1 h after the injection. The kinetics of the c-fos mRNA expression in mice that were repeatedly injected with Sub P (every 30 min interval up to 4 times) were different in the HPA axis, hippocampus, and spinal cord. The increased c-fos mRNA level in the hypothalamus and the spinal cord induced by I.t. injected Sub P remained at a high level. In the pituitary gland, adrenal gland, and hippocampus, the increased level of c-fos mRNA expression gradually returned to the control level during the repeated substance P injections up to 4 times. Our results suggest that spinally injected Sub P-induced pain stress increases c-fos mRNA expres-sion in the spinal cord, hippocampus, and HPA axis. In mice repeatedly injected with Sub P, the kinetics of c-fos mRNA appear to be different varied from tissue to tissue.

• Toxicological Research
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• 제19권2호
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• pp.105-114
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• 2003

TO evaluate an effect of cyclohexane treatment on the degree of liver damage, rats were induced liver damage with 10 or 17 times $CCl_4$ injection (0.1 m1/100 g body wt., 50% $CCl_4$ dis-solved in olive oil) at intervals of every other day. Cyclohexane (1.56 g/kg body wt., i.p.) was administrated to the animals at 48 hours after the last pretreatment of $CCl_4$ . Rats were sacrificed at 4 hours after injection of cyclohexane. On the basis of histopathological findings, liver weight/body weight (LW/ BW, %), activities of serum alanine aminotransferase (ALT), xanthine oxidase (XO) and akaline phosphatase (ALP), and contents of liver protein and manlondialdehyde (MDA), $CCl_4$ -pretreatment induced liver damage. And $CCl_4$ 17 times treated group showed more severe liver damage than $CCl_4$ 10 times treated group. Administration of one dose of cyclohexane to $CCl_4$ 10 times treated animals resulted in the enhanced liver damage; liver necrosis with proliferation of fibroblast and bile duct abnormality, and increase in hepatic MDA content and the activities of serum ALP and ALT, But the enhanced liver damage was not found in $CCl_4$ 17 times treated animals. Serum cyclohexanone concentrations at 4 or 8 hours after injection of cyclohexane were higher in all liver damaged groups than normal group and were somewhat higher In $CCl_4$ 17 times treated animals than $CCl_4$ 10 times treated ones. Among the oxygen free radical metabolizing enzymes, hepatic cytochrome P45O dependent aniline hydroxylase (CYPdAH) activity in cyclohexane metabolizing enzyme system was meaningfully increased by the injection of cyclohexane to the liver damaged rats, with increased Vmax and high affinity to aniline. LW/BW (%) and activities of serum XO and ALT were more significantly increased in liver damaged groups than normal group by administration of cyclohexanone. In conclusion, it is assumed that an enhancement of liver damage by injection of one dose of cyclohexane to liver damaged animals might be caused by oxygen free radicals and cyclohexanone.

• Mass Spectrometry Letters
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• 제5권4호
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• pp.104-109
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• 2014

Nonmedical use of prescription stimulants such as methylphenidate (MPH) and amphetamine (AP) by normal persons has been increased to improve cognitive functions. Due to high potential for their abuse, reliable analytical methods were required to detect these prescription stimulants in biological samples. A direct injection liquid chromatography-tandem mass spectrometric (LC-MS/MS) method was developed and implemented for simultaneous determination of MPH, AP and their metabolites ritalinic acid (RA) and 4-hydroxyamphetamine (HAP) in human urine. Urine sample was centrifuged and the upper layer ($100{\mu}L$) was mixed with $800{\mu}L$ of distilled water and $100{\mu}L$ of internal standards ($0.2{\mu}g/mL$ in methanol). The mixture was then directly injected into the LC-MS/MS system. The mobile phase was composed of 0.2% formic acid in distilled water (A) and acetonitrile (B). Chromatographic separation was performed by using a Capcell Pak MG-II C18 ($150mm{\times}2.0mm$ i.d., $5{\mu}m$, Shiseido) column and all analytes were eluted within 5 min. Linear least-squares regression with a 1/x weighting factor was used to generate a calibration curve and the assay was linear from 20 to 1500 ng/mL (HAP), 40-3000 ng/mL (AP and RA) and 2-150 ng/mL (MPH). The intra- and inter-day precisions were within 16.4%. The intra- and inter-day accuracies ranged from -15.6% to 10.8%. The limits of detection for all the analytes were less than 4.7 ng/mL. The suitability of the method was examined by analyzing urine samples from drug abusers.

• The Korean Journal of Physiology and Pharmacology
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• 제20권4호
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• pp.407-414
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• 2016

This study was performed to investigate whether the spinal cholinergic and serotonergic analgesic systems mediate the relieving effect of electroacupuncture (EA) on oxaliplatin-induced neuropathic cold allodynia in rats. The cold allodynia induced by an oxaliplatin injection (6 mg/kg, i.p.) was evaluated by immersing the rat's tail into cold water ($4^{\circ}C$) and measuring the withdrawal latency. EA stimulation (2 Hz, 0.3-ms pulse duration, 0.2~0.3 mA) at the acupoint ST36, GV3, or LI11 all showed a significant anti-allodynic effect, which was stronger at ST36. The analgesic effect of EA at ST36 was blocked by intraperitoneal injection of muscarinic acetylcholine receptor antagonist (atropine, 1 mg/kg), but not by nicotinic (mecamylamine, 2 mg/kg) receptor antagonist. Furthermore, intrathecal administration of $M_2$ (methoctramine, $10{\mu}g$) and $M_3$ (4-DAMP, $10{\mu}g$) receptor antagonist, but not $M_1$ (pirenzepine, $10{\mu}g$) receptor antagonist, blocked the effect. Also, spinal administration of $5-HT_3$ (MDL-72222, $12{\mu}g$) receptor antagonist, but not $5-HT_{1A}$ (NAN-190, $15{\mu}g$) or $5-HT_{2A}$ (ketanserin, $30{\mu}g$) receptor antagonist, prevented the anti-allodynic effect of EA. These results suggest that EA may have a significant analgesic action against oxaliplatin-induced neuropathic pain, which is mediated by spinal cholinergic ($M_2$, $M_3$) and serotonergic ($5-HT_3$) receptors.

• Asian-Australasian Journal of Animal Sciences
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• 제9권3호
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• pp.255-259
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• 1996

A study was carried out to investigate the action of central L-pheylalanine (Phe) and L-tyrosine (Tyr) on food intake of the chicken. In the first trial, Phe ($200{\mu}g/10{\mu}l$) or saline was acutely administered into the right lateral ventricle (i.c.v.) of chickens (5 birds per each group). Birds (4 birds per each group) were administered with the i.c.v. Tyr ($200{\mu}g/10{\mu}l$) or saline in the second trial. The brains of the birds were removed for catecholamine assy 30 min postadministration. Catecholamine concentrations were measured at specific sites of the brain (LH: lateral hypothalamus, PVN: paraventricular nucleus, and VMH: ventromedial hypothalamus). No significant effect of amino acids on the concentration of norepinephrine of brain sites investigated was detected. Food intake and rectal body temperature were also monitored for 6 h after central administrations of Phe, Tyr or saline (5 birds per each group). Both Phe and Tyr, up to $1mg/10{\mu}l$, failed to modulate food intake or rectal body temperature.

• Electrical & Electronic Materials
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• 제6권2호
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• pp.152-160
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• 1993

MNOS 구조에서 23.angs.의 얇은 산화막을 성장한 후 LPCVD방법으로 S $i_{3}$ $N_{4}$막을 각각 530.angs., 1000.angs. 두께로 달리 증착했을때 비휘발성 기억동작에 미치는 전하주입 및 기억유지 특성을 자동 .DELTA. $V_{FB}$ 측정 시스템을 제작하여 측정하였다. 전하주입 측정은 펄스전압 인가전의 초기 플랫밴드전압 0V.+-.10mV, 펄스폭 100ms 이내로 설정하고 단일 펄스전압을 인가하였다. 기억유지특성은 기억트랩에 전하를 포획시킨 직후 $V_{FB}$ 유지와 0V로 유지한 상태에서 $10^{4}$sec까지 측정하였다. 본 논문에서 유도된 산화막 전계에 대한 터넬확률을 적용한 전하주입 이론식은 실험결과와 잘 일치하였으며 본 해석방법으로 직접기억트랩밀도와 이탈진도수를 동시에 평가할 수 있었다. 기억트랩의 포획전하는 실리콘쪽으로의 역 터넬링으로 인한 조기감쇠가 컸으며 $V_{FB}$ 유지인 상태가 초기 감쇠율이 0V로 유지한 경우 보다 낮았다. 그리고 기억유지특성은 S $i_{3}$ $N_{4}$막의 두께보다 기억트랩밀도의 의존성이 크며 S $i_{3}$ $N_{4}$막두께의 축소로 기록전압을 저전압화시킬 수 있음을 알 수 있었다.