• Journal of the Korean Institute of Telematics and Electronics A
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• 제30A권12호
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• pp.77-87
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• 1993

PMOSFETs were studied on the effect of Hot-Carrier induced drain leakage current (Gate-Induced-Drain-Leakage). The result turned out that change in Vgl(drain voltage where 1pA/$\mu$m of drain leadage current flows) was largest in the Channel-Hot-Hole(CHH) injection condition and next was in dynamic stress and was smallest in electron trapping (Igmax) condition under various stress conditions. It was analyzed that if electron trapping occurrs in the overlap region of gate and drain(G/D), it reduces GIDL current due to increment of flat-band voltage(Vfb) and if CHH is injected, interface states(Nit) were generated and it increases GIDL current due to band-to-defect-tunneling(BTDT). Especially, under dynamic stress it was confirmed that increase in GIDL current will be high when electron injection was small and CHH injection was large. Therefore as applying to real circuit, low drain voltage GIDL(BTDT) was enhaced as large as CHH Region under various operating voltage, and it will affect the reliablity of the circuit.

• The Journal of the Korea institute of electronic communication sciences
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• 제9권8호
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• pp.847-852
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• 2014

As the scaling trend becomes accelerated in process technology for cost reduction in semiconductor chip manufacturing, the requirement for shrink technology has increased. Hot Carrier Injection (HCI) degradation for I/O transistors is most concerning part when shrink. To solve this, the effective channel length (Leff) was increased using liner oxide before Light Doped Drain (LDD) implants and optimized the tilt angle to increase Leff without E-field degradation in LDD region, satisfying the HCI specification.

• Proceedings of the KIEE Conference
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.735-736
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• 1998

Reduction of hot carrier degradation in MOS devices has been one of the most serious concerns for MOS-ULSIs. In this paper, three types of LDD structure for suppression of hot carrier degradation, such as spacer-induced degradation and decrease of performance due to increase of series resistance will be investigated. LDD-nMOSFETs used in this study had three different drain structure. (1) conventional ${\underline{S}}urface$ type ${\underline{L}}DD$(SL), (2) ${\underline{B}}uried$ type ${\underline{L}}DD$(BL), (3) ${\underline{S}}urface$urface ${\underline{I}}mplantation$ type LDD(SI). As a result, the surface implantation type LDD structure showed that improved hot carrier lifetime to comparison with conventional surface and buried type LDD structure.

• Journal of the Korean Institute of Telematics and Electronics A
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• 제33A권10호
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• pp.130-138
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• 1996

The size of a device needs to scale down to increase its integrity and speed. As the size of the device is reduced, the hot-carrier degradation that severely effects on device reliabilty is concerned. In this paper, sub-micron buried-channel P-MOSFETs were fabircated, and the hot-carrier effects were invetigated. Also the hot-carrier effect in the buired-channel P-MOSFETs and the surface-channel P-MOSFETs were compared with simulation programs using SUPREM-4 and MINIMOS-4. This paper showed that the electric characteristics of sub-micron P-MOSFET are different from those of N-MOSFET. Also it showed that the punchthrough voltage ( $V_{pt}$ ) was abruptly drop after applying the stress and became almost 0V when the channel lengths were shorter than 0.6.mu.m. The lower punchthrough voltage causes the device to operte poorly by the deterioration of cut-off characteries in the switching mode. We can conclude that the buried channel P-MOSFET for CMOS circuits has a limit of the channel length to be around 0.6.mu.m.

• Journal of the Korean Institute of Telematics and Electronics D
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• 제36D권7호
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• pp.34-41
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• 1999

In this paper, hot carrier induced performance degradation of peripheral circuits in memory devices such as static type imput buffer, latch type imput buffer and sense amplifier circuit has been measured and analyzed. The used design and fabrication of the peripheral circuits were $0.8 {\mu}m$ standard CMOS process. The analysis method is to find out which device is most significantly degraded in test circuits by using spice simulation, and then to characterize the correlation between device and circuit performance degradation. From the result of the performance degradation of static type input buffer, the trip point was increased due to the transconductance degradation of NMOS. In the case of latch type input buffer, there was a time delay due to the transconductance degradation of NMOS device. Finally, hot carrier induced the decrease of half-Vcc voltage and the increased of sensing voltage in sense amplifier circuits have been measured.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 한국정보통신학회 2014년도 추계학술대회
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• pp.769-772
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• 2014

The device reliability in amorphous InGaZnO under NBS(Negative Bias Stress) and hot carrier stress with different gate overlap has been characterized. Amorphous InGaZnO thin film transistor has been measured. and is channel $width=104{\mu}m$, $length=10{\mu}m$ with gate overlap $length=0,1,2,3{\mu}m$. The device reliability has been analyzed by I-V characteristics. From the experiment results, threshold voltage variation has been increased with increasing of the gate overlap length after hot carrier stress. Also, threshold voltage variation has been decreased and Hump Effect has been observed later with increasing of the gate overlap length after NBS.

• Journal of the Korean Institute of Telematics and Electronics A
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• 제28A권12호
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• pp.53-58
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• 1991

Hot-carrier induced degradation has been studied for the BF$_2$ ion-implanted surface-channel LDD(P$^{+}$ polysilicon gate) PMOSFET in comparison to the buried-channel structure(N$^{+}$ polysilicon gate) PMOSFET. The conditions for maximum degradation better correlated to I$_{g}$ than I$_{sub}$ for both PMOSFET's. Due to the use of LDD structure on SC-PMOSFET, the substrate current for SC-PMOSFET was shown to be smaller than that of BC-PMOSFET. The gate current was smaller as well, due to the gate material work-function difference between p$^{+}$ and n$^{+}$ polysilicon gates. From the results, it was shown that the surface-channel LDD PMOSFET is more resistant to short channel effect than the buried-channel PMOSFET.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.239-242
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• 2008

We have investigated the reliability of short channel ($L=1.5{\mu}m$) p-type ELA poly-Si TFTs under hot carrier stress. Threshold voltage of short channel TFT was significantly more shifted to positive direction than that of long channel TFT under the same stress. This result may be attributed to electron trapping at the interface between poly-Si film and gate oxide layer.

• 전자공학회논문지 IE
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• 제45권2호
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• pp.1-5
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• 2008

In this work, RF performance degradation due to hot carrier effects in SOI MOSFET have been measured and analyzed. The LNA that designed at $V_{GS}=0.8V$, f=2.5GHz, gain is 16.51dB and noise figure is 1.195dB. After stress at SOI, the LNA's gain and noise figure change of 15.3dB and 1.44dB with before stress.

• Proceedings of the IEEK Conference
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.970-973
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• 1999

When the size of the device is decreased, the hot carrier degradation presents a severe problem for long-term device reliability. In this paper we fabricated & tested the 0.26${\mu}{\textrm}{m}$ NMOSFET with wet gate oxide and nitride oxide gate to compare that the characteristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve and charge trapping using the Hp4145 device tester As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially a hot carrier lifetime(nitride oxide gate device satisfied 30years, but the lifetime of wet gate oxide was only 0.1year), variation of Vg, charge to breakdown and charge trapping etc.