• 마이크로전자및패키징학회지
• /
• 제28권4호
• /
• pp.85-89
• /
• 2021

AlGaN 기반 UV-C 발광다이오드(LEDs)에 전기화학적 전위차 활성화(EPA)에 의한 p-형 활성화를 진행하였다. 높은 저항과 낮은 전도도를 유발하는 중성 Mg-H의 복합체의 수소원자를 EPA를 이용하여 제거하여 p-형 활성화 효율을 높였다. 중성 Mg-H 복합체는 주요 매개 변수인 용액, 전압, 시간에 의해 Mg^-과 H⁺로 분해되며, 2차 이온질량 분광법(SIMS) 분석을 통하여 개선된 정공 캐리어의 농도를 확인할 수 있었다. 이 메커니즘은 결국 내부 양자효율(IQE)의 증가, 광 추출 효율 향상, 역 전류 영역의 누설전류 값 개선, 접합 온도 개선 등을 이루어 결과적으로 UV-C LED의 수명을 향상시켰다. 체계적인 분석을 위해 SIMS, Etamax IQE 시스템, 적분구, 전류-전압(I-V) 측정 등을 사용하였으며, 그 결과를 기존의 N₂-열 처리 방법과 비교 평가하였다.

• 공업화학
• /
• 제29권1호
• /
• pp.10-17
• /
• 2018

반도체 및 디스플레이 제조공정 중에 화학기상증착(CVD), 식각(etching), 세정(cleaning) 공정에서 배출되는 과불화합물(PFCs)를 포함한 폐 가스 처리를 위해서 POU (point of use) 가스 스크러버 시스템을 도입하여 사용하고 있다. 과불화합물은 지구온난화 지수(GWP, global warming potential)와 대기 중 자연분해되는 기간(lifetime)이 $CO_2$에 비해 수천 배 높은 온실가스로 분류되어 있으며, 과불화합물의 열분해를 위해서는 3,000 K 이상의 고온이 요구되는 것이 일반적이다. 이러한 특징 때문에 과불화합물을 효과적으로 제어하기 위한 방법으로 열플라즈마 기술을 도입하고자 하는 노력들이 진행되어 왔으며, POU 가스 스크러버 기술을 개발하여 산업적으로 이용하고자 하였다. 열플라즈마 기술은 플라즈마 토치 기술, 전원공급장치 기술 및 플라즈마 토치-전원공급장치 매칭 기술 최적화를 통해 안정적으로 플라즈마 발생원을 유지시키는 것이 중요하다. 또한, 과불화합물 고효율 처리를 위한 고온의 플라즈마와 폐 가스의 효과적인 혼합이 주요 기술요인으로 확인되었다. 본 논문에서는 반도체 및 디스플레이 공정 폐 가스 처리를 위한 후처리 공정에 대한 기술적 정보를 제공함과 동시에 POU 플라즈마 가스 스크러버에 대한 기술개발 동향을 파악함으로써 향후 연구개발이 요구되는 핵심사항에 대해 논의하고자 한다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.14-15
• /
• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

• Transactions on Electrical and Electronic Materials
• /
• 제17권5호
• /
• pp.261-269
• /
• 2016

A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm² that is the lowest-ever reported chip area for this frequency band was achieved.

• 한국전기전자재료학회논문지
• /
• 제31권3호
• /
• pp.188-192
• /
• 2018

In this study, we fabricated an $NO_X$ gas sensor using a composite film of multi-walled carbon nanotubes (MWCNT)/zinc oxide (ZnO). Carbon nanotubes (CNTs) show good electronic conductivity and chemical-stability, and zinc oxide (ZnO) is a wide band gap semiconductor with a large exciton binding energy. Gas sensors require characteristics such as high speed, sensitivity, and selectivity. The fabricated gas sensor was used to detect $NO_X$ gas at different $NO_X$ concentrations. The sensitivity of the gas sensor increased with increasing gas concentrations. Additionally, while changing the temperature inside the chamber containing the MWCNT/ZnO gas sensor, we obtained the sensitivity and normalized responses for detecting $NO_X$ gas in comparison to ZnO and MWCNT film gas sensors. From the experimental results, we confirmed that the gas sensor sensing mechanism was enhanced in the composite-film gas-sensor and that the electronic interaction between MWCNT and ZnO contributed to the improved sensor performance.

• Journal of Electrical Engineering and information Science
• /
• 제3권2호
• /
• pp.239-244
• /
• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• Bulletin of the Korean Chemical Society
• /
• 제28권12호
• /
• pp.2226-2230
• /
• 2007

As a cathode material of lithium rechargeable batteries, charged Li[Co0.1Ni0.15Li0.2Mn0.55]O2 electrodes, which were aged thermally at 25 oC and 90 oC respectively, were characterized by means of charge/discharger, impedance spectroscopy, and X-ray diffraction. The discharge capacity diminution of the electrodes aged at 25 oC and 90 oC for 1 week was 4% and 23%, respectively. The cell aged at 25 oC was recovered on cycling. However, the capacity loss after ageing at 90 oC was not recovered in a subsequent cycling test, which demonstrates that the reaction occurring during ageing at 90 oC is irreversible. A significant impedance increase of aged electrode at 90 oC is associated with irreversible capacity loss. The structural changes including phase transformation were not detected by XRD analysis, because it could be due to out of detection limit. After ageing, impedance was slightly decreased during subsequent cycling test. It could be explained the cyclic performance of aged sample is stable. The thermal stability was not deteriorated by ageing even at the high temperature of 90 oC.

• 한국통신학회논문지
• /
• 제11권3호
• /
• pp.172-178
• /
• 1986

스위치드 커패시터 필터(Switched-capacitor filter)의 유리한 점은 IC화 할 때 능동 RC회로의 RC적(RC Product)에 해다아는 것이 커패시턴스의 비로 되어 정확하게 그 값을 유지하는 것이 쉽고 클럭주파수에 의하여 중심주파수를 선형적으로 변화시킬 수 있다는 것이다. 본 논문에서는 프로그램 가능한 2차 SC필터를 구성한 후 디지털 신호에 의하여 중심주파수, 선택도 및 최대이득이 제어가능함을 실험을 통하여 입증하였다. 실험결과 필터의 ${omega}_0$는 모든 수동소자에 대해 저감도를 유지할 수 있었으나 스위치의 기생용량이 커패시터의 비에 미치는 영향은 피할 수 없었다. SC 필터는 클럭주파수, 저항 어레이등에 의하여 전달특성을 가변시킬 수 있으므로 디지탈 신호의 처리나 음성의 분석 및 합성에도 이용될 수 있을 것이다.

• 전자공학회논문지A
• /
• 제31A권12호
• /
• pp.80-90
• /
• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

• 전자공학회논문지S
• /
• 제35S권6호
• /
• pp.55-65
• /
• 1998

산업현장에서는 반도체 공정의 산화막(oxidation)과 소둔(annealing) 공정에서 생산성을 향상시키기 위해 기존의 확산로(furnace)보다 RTP(rapid thermal processing) 시스템을 많이 사용하고 있다. 이러한 RTP 시스템의 주요 제어대상은 정확한 웨이퍼(wafer)의 온도조절과 웨이퍼 내의 균일성이다. 본 논문에서는 RTP 시스템의 온도변화와 같은 외란에 대한 견실안정성 문제를 해결하기 위해 하중 혼합감도함수를 이용하여 $H^{\infty}$ 제어기를 설계하고, 온도추적 및 웨이퍼 내의 균일성 등의 견실성능 개선은 루프쉐이핑 방법을 이용한다. 온도에 따른 선형화된 모델은 차수문제로 인하여 실 시스템 구현시 제약조건이 있으므로 한켈(Hankel), 자승근 균형(square-root balanced) 및 슈어 균형(Schur balanced) 방법을 사용하여 모델 차수축소를 하여 제어기를 설계한다. 원래의 모델과 축소된 모델에 대해 성능을 비교하고 시뮬레이션을 통하여 설계한 제어기의 견실안정성과 성능을 확인한다.