Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)

The Korean Vacuum Society (한국진공학회)
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A topological metal at the surface of an ultrathin BiSb alloy film

  • Hirahara, T. (Department of Physics, University of Tokyo) ;
  • Sakamoto, Y. (Department of Physics, University of Tokyo) ;
  • Saisyu, Y. (Department of Physics, University of Tokyo) ;
  • Miyazaki, H. (UVSOR Facility, Institute for Molecular Science) ;
  • Kimura, S. (UVSOR Facility, Institute for Molecular Science) ;
  • Okuda, T. (Hiroshima Synchrotron Radiation Center, Hiroshima University) ;
  • Matsuda, I. (Synchrotron Radiation Laboratory, ISSP University of Tokyo) ;
  • Murakami, S. (Department of Physics, Tokyo Institute of Technology) ;
  • Hasegawa, S. (Department of Physics, University of Tokyo)
  • Published : 2010.02.17
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Abstract

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

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