• 제목/요약/키워드: high-power mode

검색결과 1,560건 처리시간 0.033초

강한 전단 해류 환경에서 동적 전력케이블의 VIV 피로해석 절차에 관한 기초 연구 (A Fundamental Study of VIV Fatigue Analysis Procedure for Dynamic Power Cables Subjected to Severely Sheared Currents)

  • 심천식;김민석;김철민;노유호;이재복;채광수;김강호;정다슬
    • 대한조선학회논문집
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    • 제60권5호
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    • pp.375-387
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    • 2023
  • The subsea power cables are increasingly important for harvesting renewable energies as we develop offshore wind farms located at a long distance from shore. Particularly, the continuous flexural motion of inter-array dynamic power cable of floating offshore wind turbine causes tremendous fatigue damages on the cable. As the subsea power cable consists of the helical structures with various components unlike a mooring line and a steel pipe riser, the fatigue analysis of the cables should be performed using special procedures that consider stick/slip phenomenon. This phenomenon occurs between inner helically wound components when they are tensioned or compressed by environmental loads and the floater motions. In particular, Vortex-induced vibration (VIV) can be generated by currents and have significant impacts on the fatigue life of the cable. In this study, the procedure for VIV fatigue analysis of the dynamic power cable has been established. Additionally, the respective roles of programs employed and required inputs and outputs are explained in detail. Demonstrations of case studies are provided under severely sheared currents to investigate the influences on amplitude variations of dynamic power cables caused by the excitation of high mode numbers. Finally, sensitivity studies have been performed to compare dynamic cable design parameters, specifically, structural damping ratio, higher order harmonics, and lift coefficients tables. In the future, one of the fundamental assumptions to assess the VIV response will be examined in detail, namely a narrow-banded Gaussian process derived from the VIV amplitudes. Although this approach is consistent with current industry standards, the level of consistency and the potential errors between the Gaussian process and the fatigue damage generated from deterministic time-domain results are to be confirmed to verify VIV fatigue analysis procedure for slender marine structures.

센서 노드 응용을 위한 저전력 8비트 1MS/s CMOS 비동기 축차근사형 ADC 설계 (Design of a Low-Power 8-bit 1-MS/s CMOS Asynchronous SAR ADC for Sensor Node Applications)

  • 손지훈;김민석;천지민
    • 한국정보전자통신기술학회논문지
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    • 제16권6호
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    • pp.454-464
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    • 2023
  • 본 논문은 센서 노드 응용을 위한 1MS/s의 샘플링 속도를 가지는 저전력 8비트 비동기 축차근사형(successive approximation register, SAR) 아날로그-디지털 변환기(analog-to-digital converter, ADC)를 제안한다. 이 ADC는 선형성을 개선하기 위해 부트스트랩 스위치를 사용하며, 공통모드 전압(Common-mode voltage, VCM) 기반의 커패시터 디지털-아날로그 변환기 (capacitor digital-to-analog converter, CDAC) 스위칭 기법을 적용하여 DAC의 전력 소모와 면적을 줄인다. 외부 클럭에 동기화해서 동작하는 기존 동기 방식의 SAR ADC는 샘플링 속도보다 빠른 클럭의 사용으로 인해 전력 소비가 커지는 단점을 가지며 이는 내부 비교를 비동기 방식으로 처리하는 비동기 SAR ADC 구조를 사용하여 해결할 수 있다. 또한, 낮은 해상도의 설계에서 발생하는 큰 디지털 전력 소모를 줄이기 위해 동적 논리 회로를 사용하여 SAR 로직를 설계하였다. 제안된 회로는 180nm CMOS 공정으로 시뮬레이션을 수행하였으며, 1.8V 전원전압과 1MS/s의 샘플링 속도에서 46.06𝜇W의 전력을 소비하고, 49.76dB의 신호 대 잡음 및 왜곡 비율(signal-to-noise and distortion ratio, SNDR)과 7.9738bit의 유효 비트 수(effective number of bits, ENOB)를 달성하였으며 183.2fJ/conv-step의 성능 지수(figure-of-merit, FoM)를 얻었다. 시뮬레이션으로 측정된 차동 비선형성(differential non-linearity, DNL)과 적분 비선형성(integral non-linearity, INL)은 각각 +0.186/-0.157 LSB와 +0.111/-0.169 LSB이다.

원자현미경을 이용한 탄화규소 (SiC)의 국소산화 (Local Oxidation of 4H-SiC using an Atomic Force Microscopy)

  • 조영득;방욱;김상철;김남균;구상모
    • 한국전기전자재료학회논문지
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    • 제22권8호
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    • pp.632-636
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    • 2009
  • The local oxidation using an atomic force microscopy (AFM) is useful for Si-based fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC polytypes, 4H-SiC is the most attractive polytype due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, 0.01-0.025 ${\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50 %. The height of the fabricated oxide pattern (1-3 nm) on SiC is similar to that of typically obtained on Si ($10^{15}^{\sim}10^{17}$ $cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. We demonstrated that a specific electric field (4 ${\times}$ $10^7\;V/m$) and a doping concentration ($^{\sim}10^{17}$ $cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

Atomic Force Microscopy을 이용한 4H-SiC의 Local Oxidation (Local oxidation of 4H-SiC using an atomic force microscopy)

  • 조영득;방욱;김상철;김남균;구상모
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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    • pp.79-80
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    • 2009
  • The local oxidation using an atomic force microscopy (AFM) is useful for Si-base fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC poly types, 4H-SiC is the most attractive poly type due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, $0.01{\sim}0.025\;{\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50%. The height of the fabricated oxide pattern ($1{\sim}3\;nm$) on SiC is similar to that of typically obtained on Si ($10^{15}{\sim}10^{17}\;cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. Whereas the simulated electric field on Si surface is constant ($5\;{\times}\;10^7\;V/m$), the electric field on SiC surface increases with increasing the doping concentration from ${\sim}10^{15}$ to ${\sim}10^{17}\;cm^{-3}$. We demonstrated that a specific electric field ($4\;{\times}\;10^7\;V/m$) and a doping concentration (${\sim}10^{17}\;cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

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주사전자현미경에서 가속전압의 안정성 연구 (A Study on the Stability of the Accelerating Voltages in Scanning Electron Microscopy)

  • 배문섭;오상호;조양구;이확주
    • Applied Microscopy
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    • 제34권1호
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    • pp.51-59
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    • 2004
  • 주사전자현미경(SEM)에서 전자를 발생시키는 전자총 부분의 고압발생 장치를 설계 제작하고 그 안정성을 시험하였다. 고전압을 발생시키는 switching 주파수는 고압트랜스의 1차 측 임피던스와 인덕턴스에 matching 되는 주파수에서 최적의 전압 안정도가 유지되었다. 1차 측의 고압트랜스의 turn 수가 적으면 인덕턴스가 낮으므로 최적적인 matched switching 주파수가 높은 쪽으로 올라간다. 최대 출력 전압은 -30 kV 이상 출력되었으나 안정도는 출력전압이 -5 kV에서 10 kV 범위에서 가장 좋게 나타났다. 23.8 kHz에서 출력파형의 흔들림 없었고 DC 고전압 출력 또한 최고의 안정도을 보였다. 이때 도출된 전압 안정도는 ${\pm}0.002%$였다.

새로운 DCM-ZVS DC-DC 컨버터에 관한 연구 (A Study on New DCM-ZVS DC-DC Converter)

  • 곽동걸;심재선
    • 전기전자학회논문지
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    • 제16권2호
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    • pp.131-137
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    • 2012
  • 본 논문에서는 영전압 스위칭(ZVS)과 전류불연속 모드(DCM)에 의한 새로운 고효율의 DC-DC 컨버터에 대해 연구된다. 일반적으로 고효율의 컨버터를 만들기 위해서는 전력변환기내에 사용된 반도체 스위칭 소자의 손실을 최소화하여 이루어진다. 제안한 컨버터는 DCM에 의하여 스위치의 턴-온 동작을 영전류 스위칭(ZCS)으로 만들고, 또한 새로운 유사공진 회로를 접목하여 컨버터의 고효율을 실현시킨다. 제안한 컨버터에 사용된 제어용 스위칭 소자들은 유사공진 기법에 의해 소프트 스위칭, 즉 ZVS와 ZCS으로 동작시키고, 이에 따른 제어용 스위칭 소자들은 전압과 전류의 스트레스 없이 동작한다. 그 결과 제안한 컨버터는 스위칭 손실의 저감에 의해 고효율로 구동된다. 제안한 DCM-ZVS 컨버터의 소프트 스위칭 동작과 시스템 효율은 디지털 시뮬레이션과 실험결과를 통해 그 타당성이 입증된다.

고해상도 능동 위상 배열 영상 레이더를 위한 고안정 송수신 시스템 개발 및 성능 보정 연구 (Development and Performance Compensation of the Extremely Stable Transceiver System for High Resolution Wideband Active Phased Array Synthetic Aperture Radar)

  • 성진봉;김세영;이종환;전병태
    • 한국전자파학회논문지
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    • 제21권6호
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    • pp.573-582
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    • 2010
  • 본 논문에서는 고해상도 광대역 영상 레이더용 X-대역 송수신기를 설계, 제작하고 성능 보정을 위한 연구를 수행하였다. 영상 레이더용 송수신기는 송신기, 수신기, 송수신 경로기 및 주파수 발생기로 구성되며, 특히 수신기는 지상 이동 표적 탐지를 위한 2 채널 모노펄스 구조를 가진다. 송수신기는 운용 모드에 따라 고해상도 모드를 위한 deramping 수신 기능을 제공하며, SAR 운용 모드에 적합하게 수신 대역폭 선택 기능을 가진다. 송수신기는 X-대역에서 300 MHz 이상의 대역폭을 가지며, T/R 모듈을 구동시키기에 적합하도록 송신 출력은 13.3dBm이며, 수신 이득은 39 dB, 잡음 지수는 3.96 dB 이하인 성능을 얻었다. 수신 이득은 6 비트 디지털 감쇠기에 의해 제어되며, 이득 조절 범위는 30 dB를 보였다. 수신 동적 범위는 30 dB이며, 수신 I/Q 채널 간 진폭 오차는 ${\pm}$0.38 dB 이내, 위상 오차는 ${\pm}$3.47도 이내를 보였다. 시험 결과, 송수신기는 영상 레이더에서 요구되는 전기적인 성능을 만족하였으며, 또한 영상 레이더의 성능을 크게 좌우하는 펄스 오차 항목이 분석되었으며, 임펄스 응답 특성을 개선하기 위한 보정 기법을 적용하여 개발 목표 규격을 만족하는 것을 확인하였다.

원자힘현미경을 이용한 탄화규소 미세 패터닝의 Scanning Kelvin Probe Microscopy 분석 (Scanning Kelvin Probe Microscope analysis of Nano-scale Patterning formed by Atomic Force Microscopy in Silicon Carbide)

  • 조영득;방욱;김상철;김남균;구상모
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.32-32
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    • 2009
  • Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

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Development plan for a persistent 1.3 GHz NMR magnet in a new MIRAI project on joint technology for HTS wires/cables in Japan

  • Yanagisawa, Y.;Suetomi, Y.;Piao, R.;Yamagishi, K.;Takao, T.;Hamada, M.;Saito, K.;Ohki, K.;Yamaguchi, T.;Nagaishi, T.;Kitaguchi, H.;Ueda, H.;Shimoyama, J.;Ishii, Y.;Tomita, M.;Maeda, H.
    • 한국초전도저온공학회지:초전도와저온공학
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    • 제20권2호
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    • pp.15-22
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    • 2018
  • The present article briefly overviews the plan for a new project on joint technology for HTS wires/cables and describes the development plan for the world's highest field NMR magnet, which is a major development item in the project. For full-fledged social implementation of superconducting devices, high temperature superconducting (HTS) wire is a key technology since they can be cooled by liquid nitrogen and they can generate a super-high magnetic field of >>24 T at liquid helium temperatures. However, one of the major drawbacks of the HTS wires is their availability only in short lengths of a single piece of wire. This necessitates a number of joints being installed in superconducting devices, resulting in a difficult manufacturing process and a large joint resistance. In Japan, a large-scale project has commenced, including two technical demonstration items: (i) Development of superconducting joints between HTS wires, which are used in the world's highest field 1.3 GHz (30.5 T) NMR magnet in persistent current mode; the joints performance is evaluated based on NMR spectra for proteins. (ii) Development of ultra-low resistive joints between DC superconducting feeder cables for railway systems. The project starts a new initiative of next generation super-high field NMR development as well as that of realization of better superconducting power cables.

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증기터빈용 Synchro Clutch Coupling에서 발생하는 진동에 관한 연구 (A study on Mass Unbalance Vibration Generated from 200MW Steam Turbine Synchro Clutch Coupling)

  • 심응구;김영균;문승재;이재헌
    • 한국전산유체공학회:학술대회논문집
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    • 한국전산유체공학회 2008년도 춘계학술대회논문집
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    • pp.232-235
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    • 2008
  • The vibration of steam turbine is caused by Mass Unbalance, Shaft Misalignment, Oil Whip and Rubbing etc. but in turbine which is normally operated and maintained, the Mass Unbalance component possesses the greatest portion. Our power plant has two steam turbines in capacity of 200MW and 135MW respectively and each turbine is supported by 6 journal bearings. However, we had many difficulties because the vibration amplitude of No 3 and 4 Bearings was high during the start-up and operation mode change of steam turbine. But, with this study, we completely solved the vibration problem caused by the mass unbalance of No 1 steam turbine. Until a recent date, No 3 and 4 bearings which support high pressure turbine for No 1 steam turbine had shown about 135${\mu}$m in vibration amplitude (sometimes it increased to 221${\mu}$m maximum. alarm: 6mils, trip: 9mils) at base load. After applying the study, they decreased to about 40${\mu}$m maximum. It is a result from that we did not change the setting value of Bearing Alignment and only changed the assembly position of internal parts in Synchro Clutch Coupling Rachet Wheel which links between high pressure turbine and low pressure turbine, and increased the internal gap and machining of the Pawl stopper surface. In the operation of steam turbine, if the vibration value increases by 1X, we should reduce the vibration of bearing by weight balancing. However, unless the vibration of bearing is declined by the balancing, we will have to disassemble and check the component and find the cause. In this study, We researched the way to lower mass unbalance that is 1X vibration component which has the greatest portion of vibration generated by steam turbine and We got good result by applying the findings of this study.

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