• Journal of radiological science and technology
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• v.39 no.3
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• pp.337-344
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• 2016

The purpose of this study was to evaluate the radiolucency for the phantom output to the 3D printing technology. The 3D printing technology was applied for FDM (fused deposition modeling) method and was used the material of ABS (acrylonitrile butadiene styrene) resin. The phantom was designed in cylindrical uniformity. An image uniformity was measured by a cross-sectional images of the 3D printed phantom obtained from the CT equipment. The evaluation of radiolucency was measured exposure dose by the inserted ion-chamber from the 3D printed phantom. As a results, the average of uniformity in the cross-sectional CT image was 2.70 HU and the correlation of radiolucency between PMMA CT phantom and 3D printed ABS phantom is found to have a high correlation to 0.976. In the future, this results will be expected to be used as the basis for the phantom production of the radiation quality control by used 3D printing technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.231-236
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• 1997

To improve electrical properties and uniformity of high-low doped n-type GaAs, new ohmic contacts with a low-resistance and the superior uniformity was developed using a concept of hybrid ohmic contact. The hybrid ohmic contact displayed good surface and interface morphology and had minimum contact resistivity of 3${\times}$10-6 $\Omega$$\textrm{cm}^2$ in a wide annealing temperature ranged from 340$^{\circ}C$ to 420$^{\circ}C$, which was much wider than that of conventional ohmic contacts. The microstructural analysis showed that the Pd/Ge ohmic contact at low annealing temperature (∼300$^{\circ}C$) and also annealing temperature (∼400$^{\circ}C$), resulting ij hybrid ohmic contacts.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.1-7
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• 2012

Electroplating technology is widely used in semiconductor microelectronic industry. With the development of semiconductor integrated circuit to high density and light-small scale, Extremely high quality and plated uniformity of the deposited metals are needed. Simulation technique can help to obtain better plating results. Although a few plating simulation softwares have been commercialized, plating simulation is not widely prevalent in Korea. In this paper, principle of electroplating and mathematical modeling of plating simulation are discussed. Also introduced are some cases enhancing plating thickness uniformity on leadframe, PCB and wafer by using plating simulation.

• Proceedings of the KSME Conference
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• 2001.06d
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• pp.311-318
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• 2001

A three-dimensional numerical analysis of the flow and heat transfer characteristic of wood-flour-filled polypropylene melt in an extrusion die was carried out Used for this analysis were Finite Concept Method based on FVM, unstructured grid and non-Newtonian fluid viscosity model. Temperature and flow fields are closely coupled through temperature dependent viscosity and viscous dissipation. With large Peclet, Nahme, Brinkman numbers, viscous heating caused high temperature belt near die housing, Changing taper plate thickness and examining some predefined parameters at die exit investigated the effect of taper plate on velocity and temperature uniformities. In the presence of taper plate, uniformity at die exit could be improved and there existed an optimum thickness to maximize it.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.438-443
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• 2001

In the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process, the key issues are the optimized thickness control, within-wafer-non-uniformity, and the possible defects such as pad oxide damage and nitride residue. The defect like nitride residue and silicon (or pad oxide) damage after STI-CMP process were discussed to accomplish its optimum process condition. To understand its optimum process condition, overall STI related processes including reverse moat etch, trench etch, STI fill and STI-CMP were discussed. Consequently, we could conclude that law trench depth and high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.192-197
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• 1994

High-Tc superconducting magnet properties were dependent upon design conditions such as its radius, length, critical current and notch size. In order to study, design and the simulation for small size magnet were implemented. We know that intensity of magnetic fields controled by critical current and factor ${\alpha}$( R$_2$/R$_1$) and uniformity controled by notch size. The optimal condition of intensity and uniformity magnetic field in this experiments are R$_1$=3[cm], R$_2$=12[cm], Z=10[cm], ${\alpha}$=4, notch=6[cm], critical current=12[A].

• Journal of the Korean Society of Combustion
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• v.15 no.2
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• pp.27-33
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• 2010

Recently, much attention has been paid to utilizing highly preheated air up to $1,000^{\circ}C$ through waste gas in industrial furnaces. The regenerative burner technology has shown to provide significant reduction in energy consumption (up to 60%), downsizing of the equipment (about 30%) and lower emissions (about 30%) while maintaining high thermal performance of the system since 2000. The object of this study is to develop the flameless regenerative burner for industrial furnaces based on the FLOX(Flameless Oxidation) principle and it has been designed and manufactured as pilot scale. Performance tests are experimentally done and their results are discussed. They showed 1) a very good uniformity in temperature distribution, 2) about 100 ppm in NOx at the temperature $1,300^{\circ}C$, 3) about 95% in temperature efficiency. Besides, the regenerative burner has advantage in easy maintenance and high usage rate of regenerator due to the separate and portable type of heat exchanger.

• Transactions of the Korean Society of Automotive Engineers
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• v.4 no.4
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• pp.72-79
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• 1996

The recent trend of higher output engines with more auxiliary parts is resulting in greater heat generation in the engine compartment. In order to maximize the heat dissipation and eliminate the inefficient flow in the engine compartment, it is necessary to understand the flow field under the hood. In this respect, experimental study as well as numerical analysis should be conducted. The automated measuring system was constructed to obtain three dimensional mean flow data with high accuracy. The measurements have been made on a vehicle with a steady incoming air flow. The result shows that there exists a high degree of non-uniformity in the mean flow velocity at the front of radiator.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.8-11
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• 2007

The new technologies in mobile display developed in SEC are briefly reviewed. For a differentiation, SEC's LTPS line is based on SLS (Sequential Lateral Solidification) technology. In this paper, the characteristics of SEC's SLS in recent and future mobile displays were discussed. The microstructure produced by SLS crystallization is dependent on SLS process conditions such as mask design, laser energy density, and pulse duration time. The microstructure and TFT (Thin Film Transistor) performance are closely related. For an optimization of TFT performance, SLS process condition should be adjusted. Other fabrication processes except crystallization such as blocking layer, gate insulator deposition and cleaning also affect TFT performance. Optimized process condition and tailoring mask design can make it possible to produce high quality AMOLED devices. The TFT non-uniformity caused by laser energy density fluctuation could be successfully diminished by mixing technology.