• Smart Structures and Systems
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• v.21 no.5
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• pp.601-609
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• 2018

The estimated probabilistic model of wind data based on the conventional approach may have high discrepancy compared with the true distribution because of the uncertainty caused by the instrument error and limited monitoring data. A sequential quadratic programming (SQP) algorithm-based finite mixture modeling method has been developed in the companion paper and is conducted to formulate the joint probability density function (PDF) of wind speed and direction using the wind monitoring data of the investigated bridge. The established bivariate model of wind speed and direction only represents the features of available wind monitoring data. To characterize the stochastic properties of the wind parameters with the subsequent wind monitoring data, in this study, Bayesian inference approach considering the uncertainty is proposed to update the wind parameters in the bivariate probabilistic model. The slice sampling algorithm of Markov chain Monte Carlo (MCMC) method is applied to establish the multi-dimensional and complex posterior distribution which is analytically intractable. The numerical simulation examples for univariate and bivariate models are carried out to verify the effectiveness of the proposed method. In addition, the proposed Bayesian inference approach is used to update and optimize the parameters in the bivariate model using the wind monitoring data from the investigated bridge. The results indicate that the proposed Bayesian inference approach is feasible and can be employed to predict the bivariate distribution of wind speed and direction with limited monitoring data.

• Journal of Radiation Protection and Research
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• v.29 no.4
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• pp.269-273
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• 2004

The hybrid dead time model adopting paralyzable (or extendable) and non-paralyzable (or non-extendable) dead times has been introduced to extend the usable range of G-M counters in high counting rate environment and the relationship between true and observed counting rates is more accurately expressed in the hybrid model. GMSIM, dead time effects simulator, has been developed to analyze the counting statistics of G-M counters using Monte Carlo simulations. GMSIM accurately described the counting statistics of the paralyzable and non-paralyzable models. For G-M counters that follow the hybrid model, the counting statistics behaved in between two idealized models. In the future, GMSIM may be used in predicting counting statistics of three G-M dead time models, which are paralyzable, non-paralyzable and hybrid models.

• Progress in Medical Physics
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• v.23 no.4
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• pp.303-308
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• 2012

The Geant4 based Monte Carlo code for the application of stereotactic radiosurgery was developed. The probability density function and cumulative density function to determine the incident photon energy were calculated from pre-calculated energy spectrum for the linac by multiplying the weighting factors corresponding to the energy bins. The messenger class to transfer the various MLC fields generated by the planning system was used. The rotation matrix of rotateX and rotateY were used for simulating gantry and table rotation respectively. We construct accelerator world and phantom world in the main world coordinate to rotate accelerator and phantom world independently. We used dicomHandler class object to convert from the dicom binary file to the text file which contains the matrix number, pixel size, pixel's HU, bit size, padding value and high bits order. We reconstruct this class object to work fine. We also reconstruct the PrimaryGeneratorAction class to speed up the calculation time. because of the huge calculation time we discard search process of the ThitsMap and used direct access method from the first to the last element to produce the result files.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.183-189
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• 1998

A new computer simulation method for film growth, the kinetic Monte Carlo simulation in combination with the results obtained from molecular dynamics simulation for the transient process induced by deposited atoms, was developed. The behavior of energetic atom in Au/Au(100) thin film deposition was investigated by the method. The atomistic mechanism of energetic atom deposition that led to the smoothness enhancement and the relationship between the role of transient process and film growth mechanism were discussed. We found that energetic atoms cannot affect the film growth mode in layer-by-layer at high temperature. However, at temperature of film growth in 3-dimensional mode and in quasi-two-dimensional mode, energetic atoms can enhance the smoothness of film surface. The enhancement of smoothness is caused by the transient mobility of energetic atoms and the suppression for the formation of 3-dimensional islands.

• Industrial Engineering and Management Systems
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• v.13 no.2
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• pp.210-220
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• 2014

This article describes a 2-in-1 methodology utilizing simulation optimization technique and Data Envelopment Analysis in measuring an accurate efficiency score. Given the high level of stochastic data in real environment, a novel methodology known as Data Collection Budget Allocation-Data Envelopment Analysis (DCBA-DEA) is developed. An example of the method application is shown in banking institutions. In addition to the novel approach presented, this article provides a new insight to the application domain of efficiency measurement as well as the way one conducts efficiency study.

• Journal of Korean Society for Quality Management
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• v.17 no.1
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• pp.89-106
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• 1989

For Weibull distributed lifetimes, this paper presents asymptotically optimal accelerated life test plans for practical applications under intermittent inspection and type-I censoring. Computational results show that the asymptotic variance of a low quantile at the design stress as optimal criterion is insensitive to the number of inspections at overstress levels. Sensitivity analyses indicate that optimal plans are robust enough to moderate departures of estimated failure probabilities at the design and high stresses as input parameters to plan accelerated life tests from their true values. Monte Carlo simulation for small sample study on optimal accelerated life test plans developed by the asymptotic maximum likelihood theory is conducted. Simulation results suggest that optimal plans are satisfactory for sample size in practice.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1156-1166
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• 2004

Antimony profiles by MeV implantation are measured by secondary ion mass spectrometry (SIMS) and spreading resistance (SR). The moments of SIMS and simulated profiles are calculated and compared for the exact range in MeV energy. SRIM, DUPEX, ICECREM, and TSUPREM4 simulation programs are used for the calculation of range 1D, 2D. SRIM is a Monte Carlo simulation program and different inter-atomic potentials can be used for the calculation of nuclear stopping power cross-section (Sn) and range moments. Nevertheless, the range parameters were not influenced from nuclear stopping power in MeV. Through the modification of electronic stopping power cross-section (Se), the results of simulation are remarkably improved and matched very well with SIMS data. The values of electronic stopping power are optimized for Sb high energy implantation. For the electrical activation, Sb implanted samples are annealed under $N_2$ and $O_2$ ambient. Finally, Oxidation retard diffusion(ORD) effect of Sb implanted sample are demonstrated by SR measurements and ICECREM simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Nuclear Engineering and Technology
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• v.55 no.1
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• pp.229-237
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• 2023

The mechanics underlying photon and electron interactions was validated using our developed Brachytherapy computer code for high Dose Rate (HDR). By comparing the photon cross-section utilizing multiple physics libraries in the developed code, the results were benchmarked against experimental and theoretical findings. Klein-Nishina and experimental cross-section results were in good agreement with the Livermore library results. For two therapeutically relevant materials, the first scattered electron range was measured within 1 mm and 2 mm, which has significant implications for the interpretation of the kernel dose spikes observed in previous research.

• Journal of the Korean Society of Radiology
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• v.11 no.3
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• pp.123-129
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• 2017

Compton suppression apparatus using the Compton scattering response, by inhibiting part of the spectrum Compton continuum Compton continuum in the area of the peak analysis of the gamma rays that enables a clearer device. In order to find out the geometry structure of high-purity germanium detector(HPGe) -NaI(TI) and to optimize the effect of movement, Monte Carlo simulation was used to grasp the behavioral characteristics of Compton suppression and compare several layout structures. And applied to the cylinder beaker used for the environmental measurement by using the efficiency according to the distance. For the low-energy source such as 81 keV, the Compton continuum is scarcely developed and the suppression effect is also insignificant because the scattering cross-section of the Compton effect is relatively low. In the spectrum for the remaining energy, it can be seen that the Compton continuum part is suppressed in a certain energy range. Compton suppression effect was not significantly different from positional shift. average reduction factor(ARF) value was about 1.08 for 81 keV and about 1.23 for 1332.4keV energy at the highest value. It can be seen that suppression over the Compton continuum region of the energy spectrum is a more appropriate arrangement. Therefore, it can be applied to various environmental sample measurement through optimized structure.