• 대한전기학회논문지:전력기술부문A
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• 제53권11호
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• pp.624-629
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• 2004

The UHF electromagnetic waves excited by PD pulses propagate along the GIS busbar not only TEM mode, but also TE and TM mode. Generally the waves detected by the UHF sensors are those of high order modes and such waves can only propagate higher than cut-off frequency. In this paper, the cut-off frequency of 362[kV] GIS for each modes is computed and the electromagnetic field of each propagation modes is simulated by FEM(Finite Element Method) program. Frequency band of each TEmn/TMmn modes was determinated by simulation results and was discussed optimal position of UHF sensor from this results.

• ETRI Journal
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• 제27권3호
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• pp.304-311
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• 2005

We report on the fabrication of an AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) using a dielectric-defined process. This process was utilized to fabricate $0.12\;{\mu}m\;{\times}\;100 {\mu}m$ T-gate PHEMTs. A two-step etch process was performed to define the gate footprint in the $SiN_x$. The $SiN_x$ was etched either by dry etching alone or using a combination of wet and dry etching. The gate recessing was done in three steps: a wet etching for removal of the damaged surface layer, a dry etching for the narrow recess, and wet etching. A structure for the top of the T-gate consisting of a wide head part and a narrow lower layer part has been employed, taking advantage of the large cross-sectional area of the gate and its mechanically stable structure. From s-parameter data of up to 50 GHz, an extrapolated cut-off frequency of as high as 104 GHz was obtained. When comparing sample C (combination of wet and dry etching for the $SiN_x$) with sample A (dry etching for the $SiN_x$), we observed an 62.5% increase of the cut-off frequency. This is believed to be due to considerable decreases of the gate-source and gate-drain capacitances. This improvement in RF performance can be understood in terms of the decrease in parasitic capacitances, which is due to the use of the dielectric and the gate recess etching method.

• Journal of Information Display
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• 제12권2호
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• pp.109-113
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• 2011

This paper summarizes the recent fabrication and characterizations of flexible high-speed radio frequency (RF) transistors, PIN-diode single-pole single-throw switches, as well as flexible inductors and capacitors, based on single-crystalline Si nanomembranes transferred on polyethylene terephthalate substrates. Flexible thin-film transistors (TFTs) on plastic substrates have reached RF operation speed with a record cut-off/maximum oscillation frequency ($f_T/f_{max}$) values of 3.8/12 GHz. PIN diode switches exhibit excellent ON/OFF behaviors at high RF frequencies. Flexible inductors and capacitors compatible with high-speed TFT fabrication show resonance frequencies ($f_{res}$) up to 9.1 and 13.5 GHz, respectively. Robust mechanical characteristics were also demonstrated with these high-frequency passives components.

• 한국정보통신학회논문지
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• 제16권3호
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• pp.565-570
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• 2012

본 논문은 LTE-Advanced 시스템을 위한 멀티채널을 선택할 수 있는 저역통과 필터를 제안한다. 제안하는 저역통과 필터는 5 MHz, 10 MHz, 그리고 40 MHz의 3가지 모드의 차단주파수를 제공하며 Active-RC 5차 Chebyshev 구조로 설계되었다. 저전력을 확보하면서 40 MHz의 높은 차단 주파수를 확보하기 위해서 부성 저항을 가지는 PMOS Cross-Connection Load를 사용한 연산증폭기를 필터에 적용하였다. 더불어 공정, 전압, 그리고 온도에 의한 각각의 차단주파수 변화에 대응할 수 있도록 각각 3-bit 제어 가능한 튜닝회로를 추가하였다. 제안하는 필터는 0.13-${\mu}m$ CMOS 공정을 사용하여 설계하였으며 1.2 V 전압에서 총 20.9 mW 전력을 소모한다.

• 한국항행학회논문지
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• 제25권5호
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• pp.363-369
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• 2021

본 논문에서는 텔레메트리 시스템을 위한 가변 컷 오프 주파수 및 가변 샘플레이트 특성을 지니는 저면적 다채널 디지털 필터구조를 제안한다. 제안하는 디지털 필터는 임의의 컷 비율에 대해 필터 뱅크의 추가적인 설계 없이 컷 오프 주파수와 샘플레이트를 가변적으로 사용할 수 있는 필터 뱅크를 구현함으로써 하드웨어 면적을 줄일 수 있었다. 또한, 멀티플렉서 (MUX; Multiplexer) 컨트롤을 통해 통과하는 필터의 개수에 따라 샘플레이트를 가변적으로 선택할 수 있는 구조를 제안한다. 제안하는 디지털 필터는 Quartus의 FIR (finite impulse response) IP (intellectual property)의 TDM (time division multiplexing)을 이용함으로써, TDM을 사용하지 않았을 때보다 면적이 큰 DSP (digital signal processing) 블록을 80개에서 1개로 줄일 수 있었다. Kaiser 창 함수를 이용하여 Matlab을 통해 필터의 차수와 계수를 계산하였으며, VHDL (very high speed integrated circuits hardware description language)을 통해 하드웨어로 구현하였다. 텔레메트리 시스템에 적용 후, 실험 결과를 통해 제안하는 디지털 필터가 정상적으로 동작하고 있음을 확인하였다.

• 조명전기설비학회논문지
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• 제25권1호
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• pp.78-84
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• 2011

Using sensors to detect current or voltage of motors is disadvantaged because motor is exposed to vibration, impacts, corrosion, high temperature and humidity in the machinery structure like HEV. In the case of IPMSM, position information is included not only in the flux or EMF term but also in the rotator inductance because of its saliency. To solve this problem, a new mathematical model of IPMSMs on fixed frame is proposed and an extended EMF includiing rotating position information is defined to estimate extended EMF. A strong low-pass filter through the variable cut-off frequency using velocity function was proposed. This makes it is possible to estimate extended EMF by least order disturbance observer. The proposed method was proved through the experiment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.55-58
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• 2000

SiGe heterojuction bipolar transistors (HBT) have been studied and applied for advanced high speed integrated circuits. Device characteristics of SiGe HBT depending on the Ge profile of the transistor base region have been analysed using a device simulator, ATLAS/BLAZE. The models and parameters have been calibrated to the measured characteristics of the device, having a trapeziodal base profile, including the cut-off frequency of 45GHz and the dc current gain of 200. The Ge concentration which increases linearly, exponentially, or root-functionally from the emitter-base junction to the base-collector junction, has been tried to find out the influence on the device characteristics. The cut-off frequency and gain rather strongly depends on the exponential and root-functional Ge base profiles, respectively.

• 센서학회지
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• 제29권5호
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• pp.324-327
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• 2020

The impact of output conductance (g_o) on the short-circuit current-gain cut-off frequency (f_T) in In_0.8Ga_0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of f_T in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for f_T in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with L_g from 260 to 25 nm. In long-channel devices, the effect of the intrinsic output conductance (g_oi) on f_T was negligible. This was because, from the simplified SSM perspective, three model parameters, such as g_{m_ext}, C_{gs_ext} and C_{gd_ext}, were weakly dependent on g_oi. However, in short-channel devices, g_oi was found to play a significant role in degrading f_T as L_g was scaled down. The increase in g_oi in short-channel devices caused a considerable reduction in g_{m_ext} and an overall increase in the total extrinsic gate capacitance, yielding a decrease in f_T with g_oi. Finally, the results were used to infer how f_T is influenced by g_oi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down L_g.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1784-1786
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• 1996

It is necessary to eliminate the broad band noise which frequency is in a few kHz to MHz in the AC line to supply the power to electrical and electronic control equipments. Because this kind of noise could damage the device or could be a source of malfunction, many devices like a filter and surge suppressor are developed to cut off the noise. But those device could not disconnected from the power line, so it remain some problem and on be used in limited area, In this paper, we present performance test results NCT(noise Cut Transformer) with excellent performance for reducing the high frequency noise and surge existing in the power line.

• 전기학회논문지
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• 제65권10호
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• pp.1706-1711
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• 2016

Electromagnetic wave simulation was performed to predict characteristics of manufactured cutoff probe at low temperature magnetized plasma medium. Microwave cutoff probe is designed for research the properties of magnetized inductively coupled plasma. It was shown that the cutoff probe method can safely be used for weakly magnetized high density plasma sources. Cutoff probe system with two port network analyzer has been prepared and applied to measure electron density distributions in large area, 13.56MHz driven weakly magnetized inductively coupled plasma source. The results shown that, the plasma frequency confirmed cut-off characteristics in low temperature plasma. Especially, cut-off characteristics was found at upper hybrid resonance frequency in the environment of the magnetic field. In case of a induced weak magnetic field in inductively coupled plasma, plasma density estimated from the cutoff frequency in the same way at unmagnetized plasma due to nearly same plasma frequency and upper hybrid resonance frequency. The plasma density is increased and uniformity is improved by applying a induced weak magnetic field in inductively coupled plasma.