Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Effect of Output-conductance on Current-gain Cut-off frequency in In0.8Ga0.2As High-Electron-mobility Transistors

In0.8Ga0.2As HEMT 소자에서 Output-conductance가 차단 주파수에 미치는 영향에 대한 연구

  • Rho, Tae-Beom (School of Electronics Engineering, Kyungpook National Unversity) ;
  • Kim, Dae-Hyun (School of Electronics Engineering, Kyungpook National Unversity)
  • 노태범 (경북대학교 전자공학부) ;
  • 김대현 (경북대학교 전자공학부)
  • Received : 2020.07.21
  • Accepted : 2020.08.05
  • Published : 2020.09.30
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Abstract

The impact of output conductance (go) on the short-circuit current-gain cut-off frequency (fT) in In0.8Ga0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of fT in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for fT in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with Lg from 260 to 25 nm. In long-channel devices, the effect of the intrinsic output conductance (goi) on fT was negligible. This was because, from the simplified SSM perspective, three model parameters, such as gm_ext, Cgs_ext and Cgd_ext, were weakly dependent on goi. However, in short-channel devices, goi was found to play a significant role in degrading fT as Lg was scaled down. The increase in goi in short-channel devices caused a considerable reduction in gm_ext and an overall increase in the total extrinsic gate capacitance, yielding a decrease in fT with goi. Finally, the results were used to infer how fT is influenced by goi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down Lg.

Keywords

References

  1. T. Takahashi, M. Sato, K. Makiyama, T. Hirose and N. Hara, "InAlAs/InGaAs HEMTs with minimum noise figure of 1.0 dB at 94 GHz", Proc. IEEE 19th Int. Conf. IPRM, pp. 55-58, Matsue, Japan, 2007.
  2. J. M. Hornibrook, J. I. Colless, I. D. C. Lamb, S. J. Pauka, H. Lu, A. C. Gossard, J. D. Watson, G. C. Gardner, S. Fallahi, M. J. Manfra and D. J. Reilly, "Cryogenic control architecture for large-scale quantum computing", Phys. Rev. Appl., Vol. 3, pp. 024010(1)-024010(9), 2015 https://doi.org/10.1103/physrevapplied.3.024010
  3. K. M. H. Leong, X. Mei, W. H. Yoshida, A. Zamora, J. G. Padilla, B. S. Gorospe, K. Nguyen and W. R. Deal, "850 GHz receiver and transmitter front-end using InP HEMT", IEEE Trans. THz Sci. Technol., Vol. 7, No. 4, pp. 466-475, 2017. https://doi.org/10.1109/TTHZ.2017.2710632
  4. W. R. Deal, K. Leong, A. Zamora, B. Gorospe, K. Nguyen and X. B. Mei, "A 660 GHz up-converter for THz communications", Proc. IEEE Compd Semicond. Integr. Circuit Symp. (CSICS), pp. 1-4, Miami, FL, USA, 2017.
  5. A. Tessmann, A. Leuther, S. Wagner, H. Massler, M. Kuri, H. -P. Stulz, M. Zink, M. Riessle and T. Merkle, "A 300 GHz low-noise amplifier S-MMIC for use in next-generation imaging and communication applications", Proc. IEEE MTT-S Int. Microw. Symp., pp. 760-763, Honololu, Hi, USA, 2017.
  6. E. -Y. Chang, C. -I. Kuo, H. -T. Hsu, C. -Y. Chiang and Y. Miyamoto, "InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications", Appl. Phys. Exp., Vol. 6, No. 3, pp. 034001(1)-034001(3), 2013. https://doi.org/10.7567/APEX.6.034001
  7. H. -B. Jo, D. -Y. Yun, J. -M. Baek, J. -H. Lee, T. -W. Kim, D. -H. Kim, T. Tsutsumi, H. Sugiyama and H. Matsuzaki, "Lg = 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz", Appl. Phys. Exp., Vol. 12, No. 5, pp. 054006(1)-054006(4), 2019. https://doi.org/10.7567/1882-0786/ab1943
  8. I. H. Rodrigues, D. Niepce, A. Pourkabirian, G. Moschetti, J. Schleeh, T. Bauch and J. Grahn, "On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field", AIP Adv., Vol. 9, No. 8, 085004(1)-085004(4), 2019.
  9. T. Takahashi, Y. Kawano, K. Makiyama, S. Shiba, M. Sato, Y. Nakasha and N. Hara, "Enhancement of fmax to 910 GHz by adopting asymmetric gate recess and double-side-doped structure in 75-nm-gate InAlAs/InGaAs HEMTs", IEEE Trans. Electron Devices, Vol. 64, No. 1, pp. 89-95, 2017. https://doi.org/10.1109/TED.2016.2624899
  10. H. Sugiyama, T. Hoshi, H. Yokoyama and H. Matsuzaki, "Metal-organic vapor-phase epitaxy growth of InP-based HEMT structures with InGaAs/InAs composite channel", Int. Conf. on IPRM, pp. 245-248, Santa Barbara, CA, USA, 2012.
  11. D. -Y. Yun, H. -B. Jo, S. -W. Son, J. -M. Baek, J. -H. Lee, T. -W. Kim, D. -H. Kim, T. Tsutsumi, H. Sugiyama and H. Matsuzaki, "Impact of the source-to-drain spacing on the DC and RF characteristics of InGaAs/InAlAs high-electron mobility transistors", IEEE Electron Device Lett., Vol. 39, No. 12, pp. 1844-1847, 2018. https://doi.org/10.1109/LED.2018.2876709
  12. S. Y. Chou and D. A. Antoniadis, "Relationship between measured and intrinsic transconductances of FET's", IEEE Trans. Electron Devices, Vol. 34, No. 2, pp 448-450, 1987. https://doi.org/10.1109/T-ED.1987.22942