• Title/Summary/Keyword: high Permittivity

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Electrical and Thermal Characterization of Organic Varnish Filled with ZrO2 Nano Filler Used in Electrical Machines

  • Selvaraj, D. Edison;Vijayaraj, R.;Sugumaran, C. Pugazhendhi
    • Journal of Electrical Engineering and Technology
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    • v.10 no.4
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    • pp.1700-1711
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    • 2015
  • In the last decade it has been witnessed significant developments in the area of nano particles and nano scale fillers on electrical, thermal, and mechanical properties of polymeric materials such as resins, varnishes, enamel and bakelites. The electric and thermal properties were more important in the electrical equipments for both steady state and transient state conditions. This paper deals with the characterization of the electric and thermal properties of the pure varnish and zirconia (ZrO2) filler mixed varnish. The electric properties such as dielectric loss (tan δ), dielectric constant (ε), dielectric strength and partial discharge voltage were analyzed and detailed for different samples. It was observed that zirconia nano filler mixed varnish has the superior dielectric and thermal properties when compared to those of standard varnish. It has shown that at power frequency the 1wt% nano composite sample has the higher permittivity value when compared to other samples. It has been examined that the 1wt% sample was having higher inception and extinction voltages when compared to other samples. It has been observed that 1wt% sample has higher dielectric strength when compared with other samples. There has been an improvement of thermal property by adding few weight percent of zirconia nano fillers. There was not much variation in glass transition among the nano mixed composites. The weight loss was improved at 1wt% of the zirconia nano fillers.

A Study on the Fabrication of the Low Noise Amplifier Using Resistive Decoupling circuit and Series feedback Method (저항결합 회로와 직렬 피드백 기법을 이용한 저잡음 증폭기의 구현에 관한 연구)

  • 유치환;전중성;황재현;김하근;김동일
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2000.10a
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    • pp.190-195
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    • 2000
  • This paper presents the fabrication of the LNA which is operating at 2.13∼2.16 GHz for IMT-2000 lot-end receiver using series feedback and resistive decoupling circuit. Series feedback added to the source lead of a transistor keep the low noise characteristics and drop the input reflection coefficient of amplifier simultaneously. Also, it increases the stability of the LNA. Resistive decoupling circuit is suitable for input stage matching because a signal at low frequency is dissipated by a resistor in the matching network The amplifier consist of GaAs FET ATF-10136 for low noise stage and VNA-25 which is internally matched MMIC for high gain stage. The amplifier is fabricated with both the RF circuits and self bias circuit on the Teflon substrate with 3.5 permittivity. The measured results of the LNA which is fabricated using above design technique are presented more than 30 dB in gain P$\_$ldB/ 17 dB and less than 0.7 dB in noise figure, 1.5 in input$.$output SWR(Standing Wave Ratio).

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Solution of TM Scattering by a Conductive Strip Grating Over the Grounded Two Dielectric Layers with Edge Boundary Condition (모서리 경계조건을 만족하는 접지된 2개의 유전체층 위의 도체띠 격자구조에 의한 TM 산란의 해)

  • Yoon, Uei-Joong
    • Journal of Advanced Navigation Technology
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    • v.17 no.4
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    • pp.429-434
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    • 2013
  • In this paper, the TM (Transverse Magnetic) scattering problems by a perfectly conducting strip grating over a grounded two dielectric layers with edge boundary condition are analyzed by applying the FGMM (Fourier Galerkin Moment Method). For the TM scattering problem, the induced surface current density is expected to the very high value at both edges of the strip, then the induced surface current density on the conductive strip is expanded in a series of the multiplication of the Chebyshev polynomials of the first kind and the functions of appropriate edge boundary condition. Generally, when the value of the relative permittivity of dielectric layers over the ground plane increased, the strip width according to the sharp variation points of the reflected power is shifted to a higher value. The numerical results shown the fast convergent solution and good agreement compared to those of the existing papers.

Spectral Analysis Method for Classification of Liquid Characteristics (액체의 특성 분류를 위한 스펙트럼 분석 방법)

  • Lee, Jonggil
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.12
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    • pp.2206-2212
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    • 2016
  • It is necessary to find characteristic phenomena related with permittivity differences for classification of liquid characteristics. If these phenomena can be remotely detected and characteristics can be extracted, it will be very useful in finding flammable liquid materials and classifying substances of these liquids. Therefore, in this paper, reflection and transmitted signals were analyzed from three receiving antennas with one transmitting antenna using wideband electromagnetic wave signals. Frequency response characteristics of reflected or transmitted signals are different according to characteristics of liquid materials. However, conventional FFT methods cannot be applied due to problems of low resolution caused by data windowing distortion. To minimize these problems, eigenvector analysis method was applied for high resolution spectrum estimation of received signals. From these results, it can be shown that classification of many kinds of liquids are possible using peak frequencies and corresponding peak power values of spectrum estimates obtained from various liquid materials.

Electrical Properties of $(x)BaTiO_3-(1-x)SrTiO_3$ Ceramic with Variation of $SrTiO_3$ Substitution ($SrTiO_3$ 고용에 따른 $(x)BaTiO_3-(1-x)SrTiO_3$ 세라믹의 전기적 특성)

  • Jang, Dong-Hwan;Ki, Hyun-Chul;Hong, Hyung-Jin;Jung, Woo-Sung;Kim, Tae-Sung
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.795-797
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    • 1998
  • A $BaTiO_3$, ferroelectric material, was mixed $SrTiO_3$, $(x)BaTiO_3-(1-x)SrTiO_3$($0.7{\leq}x{\leq}1$) ceramic capacitor with stable electrical properties in high voltage was fabricated. And microstructure, electrical property were investigated with $SrTiO_3$ mol ratio. The shrinkage, open porosity, sintering density were predominated at $9BaTiO_3-0.1SrTiO_3$. Increasing $SrTiO_3$ mol ratio, curie temperature was shifted at low temperature and maximum permittivity was increased. Also, $0.9BaTiO_3-0.1SrTiO_3$ was showed stable dielectric properties at $25{\sim}80[^{\circ}C]$. V-I properties of specimen were observed in the temperature range of $21{\sim}143[^{\circ}C]$, were divided into three regions. The region I below 10[kV/cm] was shown Ohmic conduction, the region II from 10 to 30[kV/cm] was explained by the Poole-Frenkel emission theory and the region III above 30[kV/cm] was analysed by the tunneling effect.

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Millimeter-Wave CMOS On-Chip Dipole Antenna Design Optimization (밀리미터파 CMOS 온-칩 다이폴 안테나 설계 최적화)

  • Choi, GeunRyoung;Choi, Seung-Ho;Lee, Kook Joo;Kim, Moonil;Kim, Dowon;Jung, Dong Yun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.6
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    • pp.595-601
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    • 2013
  • This paper presents an optimized design of a millimeter-wave on-chip dipole antenna using CMOS process. The serious flaw of the antenna using CMOS process is low radiation efficiency because of high permittivity and conductivity. To overcome the weakness, we need to widen radiation area in air and optimize distance between an antenna and a reflector. The radiation efficiency and bandwidth of the designed antenna are respectively 16.5 % and 22.3 % at 80 GHz. Systematic methods are attempt to analyze an effect on the antenna radiation efficiency. To widen radiation area in air, substrate cut angle and distance between the antenna and chip edge are adjusted. In addition, to optimize distance between an antenna and reflector, substrate thickness and distance between the antenna and a circuit ground plane are adjusted.

A Study on the Subthreshold Swing for Double Gate MOSFET (더블게이트 MOSFET의 서브문턱스윙에 대한 연구)

  • Jung, Hak-Kee;Dimitrijev, Sima
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.9 no.4
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    • pp.804-810
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    • 2005
  • An analytical subthreshold swing (SS) model has been presented for double gate MOSFET(DGMOSFET) in this study. The results calculated by this model are more precise for about 10nm channel length and thickness than those derived from the previous models. The results of this model are compared with Medici simulation to varify the validity of this model, and good agreementes have been obtained. The changes of SS have been investigated for various channel lengths, channel thicknesses and gate oxide thicknesses using this model, given that these parameters are very important in design of DGMOSFET. This demonstrates that the proposed model provides useful data for design of nano-scale DGMOSFET. It is Known that the SS is improved to smaller ratios of channel thickness vs channel length and is smaller in very thin oxides. New gate dielectric materials with high permittivity have to be developed to enable design of nano-scale DGMOSFET.

A Study on the Fabrication of the Low Noise Amplifier Using a Series Feedback Method (직렬 피드백 기법을 이용한 저잡음 증폭기의 구현에 관한 연구)

  • 김동일;유치환;전중성;정세모
    • Journal of the Korean Institute of Navigation
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    • v.25 no.1
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    • pp.53-60
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    • 2001
  • This paper presents the fabrication of the LNA which is operating at 2.13 ~ 2.16 GHz for IMT-2000 front-end receiver using series feedback and resistive decoupling circuit. Series feedback added to the source lead of a GaAs FET keeps the low noise characteristics and drops the input reflection coefficient of a low noise amplifier simultaneously. Also, it increases the stability of the LNA. Resistive decoupling circuit is suitable for input stage matching because a signal at low frequency is dissipated by a resistor in the matching network. The amplifier consists of GaAs FET ATF-10136 for low noise stage and VNA-25 which is internally matched MMIC for high gain stage. The amplifier is fabricated with both the RF circuits and self bias circuit on the Teflon substrate with 3.5 permittivity. The measured results of the LNA which is fabricated using the above design technique are presented more than 30 dB in gain, PldB 17 dB and less than 0.7 dB in noise figure, 1.5 in inputㆍoutput SWR(Standing Wave Ratio).

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Sintering and Microwave Dielectric Properties of Bi18(Ca0.725Zn0.275)8Nb12O65 [BCZN] Dielectrics with V2O5 Addition (소결조제 V2O5 첨가에 따른 Bi18(Ca0.725Zn0.275)8Nb12O65 [BCZN] 유전체의 소결 및 마이크로파 유전특성)

  • Lee, Young-Jong;Kim, Sung-Soo
    • Journal of Powder Materials
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    • v.17 no.4
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    • pp.289-294
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    • 2010
  • For the aim of low-temperature co-fired ceramic microwave components, sintering behavior and microwave properties (dielectric constant ${\varepsilon}_r$, quality factor Q, and temperature coefficient of resonant frequency ${\tau}_f$) are investigated in $Bi_{18}O(Ca_{0.725}Zn_{0.275})_8Nb_{12}O_{65}$ [BCZN] ceramics with addition of $V_2O_5$. The specimens are prepared by conventional ceramic processing technique. As the main result, it is demonstrated that the additives ($V_2O_5$) show the effect of lowering of sintering temperature and improvement of microwave properties at the optimum additive content. The addition of 0.25 wt% $V_2O_5$ lowers the sintering temperature to $890^{\circ}C$ utilizing liquidphase sintering and show the microwave dielectric properties (dielectric constant ${\varepsilon}_r$ = 75, quality factor $Q{\times}f$ = 572 GHz, temperature coefficient of resonance frequency ${\tau}_f\;=\;-10\;ppm/^{\circ}C$). The estimated microwave dielectric properties with $V_2O_5$ addition (increase of ${\varepsilon}_r$, decrease of $Q{\times}f$, shift of ${\tau}_f$ to negative values) can be explained by the observed microstrucure (sintered density, abnormal grain structure) and possibly high-permittivity $Bi_{18}Zn_8Nb_{12}O_{65}$ (BZN) phase determined by X-ray diffraction.

Formation Rate of Tetragonal BaTiO3 Powder by Hydrothermal Synthesis and its Dielectric Property (수열합성법에 의한 정방정 BaTiO3 분말의 생성속도 및 유전특성)

  • 이종현;최용각;원창환;김채성
    • Journal of the Korean Ceramic Society
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    • v.39 no.7
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    • pp.628-634
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    • 2002
  • Formation rate of tetragonal BaTiO$_3$powder by hydrothermal synthesis and its dielectric property were studied. Submicron tetragonal BaTiO$_3$ powders were prepared hydrothermally, using Ba(OH)$_2$.8$H_2O$, TiO$_2$(anatase) and KOH as starting chemicals. Characterization via X-ray diffractometry, field emission scanning electron microscopy confirmed that increasing calcination temperatures(from 1100 to 130$0^{\circ}C$) promotes the formation of tetragonal BaTiO$_3$. Tetragonal BaTiO$_3$ ceramics, obtained by calcining at 1200 for 3 h after hydrothermal synthesis at 200 for 168 h, exhibited submicron size of 0.5 ~ 0.7 ${\mu}{\textrm}{m}$ and high relative permittivity.