• Journal of Powder Materials
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• v.15 no.4
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• pp.302-307
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• 2008

$Gd_2O_3$-doped $CeO_2$(GDC) solid solutions have been considered as a promising materials for electrolytes in intermediate-temperature solid oxide fuel cells. In this study, the nano-sized GDC powder with average panicle size of 69nm was prepared by a high energy ball milling process and its sintering behavior was investigated. Heat-treatment at $1200^{\circ}C$ of nano-sized GDC powder mixture led to GDC solid-solution. The enhanced densification over 96% of relative density was obtained after sintering at $1300^{\circ}C$ for 2h. It was found that the sinterability of GDC powder could be significantly improved by the introduction of a high energy ball milling process.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.178-183
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• 2016

Ferroelectric relaxor ceramics with $BaTiO_3-NaNbO_3-Bi(Mg_{1/2}Ti_{1/2})O_3$ ternary compositions (BT-NN-BMT) have been prepared by sol-gel powder synthesis and consequent bulk ceramic processing. Through the modified chemical approach, fine and single-phase complex perovskite compositions were successfully obtained. Temperature and frequency dependent dielectric properties indicated typical relaxor characteristics of the BT-NN-BMT compositions. The ferroelectric-paraelectric phase transition became diffusive when NN and BMT were added to form BT based solid solutions. BMT additions to the BT-NN solid solutions affected the high temperature dielectric properties, which might be attributable to the compositional inhomogeneity of the complex perovskite and resulting weak dielectric coupling of the Bi-containing polar nanoregions (PNRs). The temperature stability of the dielectric properties was good enough to satisfy the X9R specification. The quasi-linear P-E response and the temperature- stable dielectric properties imply the high potential of this ceramic compound for use in high temperature capacitors.

• Korean Journal of Materials Research
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• v.14 no.5
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• pp.338-342
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• 2004

Ni-Zn ferrite powder was obtained by wet method that was to be coprecipitated the metal nitrates, Fe($NO_3$)$_3$ㆍ$9H_2$O, Ni($NO_3$)$_2$ㆍ$6H_2$O, Zn($NO_3$)$_2$ㆍ$6H_2$O to make a high permeability material. The composition of the ferrite powder was $Fe_2$$O_3$ 52 mol%, NiO 14.4 mol%, ZnO 33.6 mol%. Ni-Zn ferrite powder was compounded by precipitating metal nitrates with NaOH in vessel at the synthetic temperature of $90^{\circ}C$ for 8 hours. Calcination temperature and sintering temperature were $700^{\circ}C$ and $1150^{\circ}C$～$1250^{\circ}C$, respectively, for 2 hours. And the other ferrite powder was also prepared by the wet ball milling that was to be mixed the metal oxides as same as the above chemical composition. We studied the properties of the powder and the electromagnetic characteristics of the sintered cores obtained from there two different processes. Wet direct process produced smaller particle size with narrower distribution of the size and more purified ferrite whose sintered cores had high permeability and high magnetization.

• Structural Engineering and Mechanics
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• v.85 no.1
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• pp.29-53
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• 2023

High-strength shielding concrete against gamma radiation is a priority for many medical and industrial facilities. This paper aimed to investigate the gamma-ray shielding properties of high-strength hematite concrete mixed with silica fume (SF) with nanoparticles of lead dioxide (PbO₂), tungsten oxide (WO₃), and bismuth oxide (Bi₂O₃). The effect of mixing steel fibres with the aforementioned binders was also investigated. The reference mixture was prepared for high-strength concrete (HSCC) containing 100% hematite coarse and fine aggregate. Thirteen mixtures containing 5% SF and nanoparticles of PbO₂, WO₃, and Bi₂O₃ (2%, 5%, and 7% of the cement mass, respectively) were prepared. Steel fibres were added at a volume ratio of 0.28% of the volume of concrete with 5% of nanoparticles. The slump test was conducted to workability of fresh concrete Unit weight water permeability, compressive strength, splitting tensile strength, flexural strength, and modulus of elasticity tests were conducted to assess concrete's engineering properties at 28 days. Gamma-ray radiation of 137Cs emits photons with an energy of 662 keV, and that of 60Co emits two photons with energies of 1173 and 1332 keV were applied on concrete specimens to assess radiation shielding properties. Nanoparticles partially replacing cement reduced slump in workability of fresh concrete. The compressive strength of mixtures, including nanoparticles was shown to be greater, achieving 94.5 MPa for the mixture consisting of 7.5 PbO2. In contrast, the mixture (5PbO₂-F) containing steel fibres achieved the highest values for splitting tensile, flexural strength, and modulus of elasticity (11.71, 15.97, and 42,840 MPa, respectively). High-strength shielded concrete (7.5PbO2) showed the best radiation protection. It also showed the minimum concrete thickness required to prevent the transmission of radiation.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.25-28
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• 2002

In this study, microstructural, dielectric and electrical properties of (Pb$\sub$0.83/) (La$\sub$0.2/Ce$\sub$0.8/)$\sub$0.08/TiO$_3$(PCT) ceramics as a function of MnO$_2$ addition and electrode size variation were investigated for 30 MHz high frequency ceramic resonator application. Grain size was gradually increased according to the increase of MnO$_2$ addition amount. Moreover, the density showed a constant value with increasing MnO$_2$ addition amount. Dielectric constant was decreased with increasing MnO$_2$ addition amount. Curie temperature of all the composition ceramics was nearly constant around 330$^{\circ}C$. The maximum D.R.of 50.5 dB and maximum Q$\sub$mt3/ of 1842 in the 3$\^$rd/ overtone vibration mode were appeared at the composition of 0.3wt% MnO$_2$, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.221-221
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• 2003

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.164-169
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• 2014

We investigated the etching characteristics of $HfAlO_3$ thin films in $O_2/Cl_2/Ar$ and $O_2/BCl_3/Ar$ gas, using a high-density plasma (HDP) system. The etch rates of the $HfAlO_3$ thin film obtained were 30.1 nm/min and 36 nm/min in the $O_2/Cl_2/Ar$ (3:4:16 sccm) and $O_2/BCl_3/Ar$ (3:4:16 sccm) gas mixtures, respectively. At the same time, the etch rate was measured as a function of the etching parameter, namely as the process pressure. The chemical states on the surface of the etched $HfAlO_3$ thin films were investigated by X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched $HfAlO_3$ thin films. These surface analyses confirm that the surface of the etched $HfAlO_3$ thin film is formed with nonvolatile by-product. Also, Cl-O can protect the sidewall due to additional $O_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.164.2-164.2
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• 2014

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of $329.7{\pm}16.9cm^2/V{\cdot}s$, and a high on-off ratio of $10^5$. The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.

• Applied Chemistry for Engineering
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• v.27 no.4
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• pp.439-443
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• 2016

In this report, $MnO_2$ nanoparticle-deposited functionalized graphene sheets were prepared and their superior electrochemical performances were demonstrated by cyclic voltammetry, galvanostatic charge-discharge, and impedance analysis. Ionic liquids were employed to functionalize the surface of reduced graphene oxides (RGOs), leading to prevention of the aggregation of RGO sheets and abundant growth sites for deposition of $MnO_2$ nanoparticles. As-prepared $MnO_2/RGO$ nanocomposites were characterized using scanning electron microscope, transition electron microscope, X-ray photoelectron spectroscopy, and X-ray diffraction. Electrochemical properties of $MnO_2/RGO$ electrode were evaluated using $Na_2SO_4$ electrolyte under a three-electrode system. The $MnO_2/RGO$ electrode showed a high specific capacitance (251 F/g), a high rate capability (80.5% retention), and long-term stability (93.6% retention).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).