Transactions on Electrical and Electronic Materials

  • 제15권3호
  • /
  • Pages.164-169
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  • 2014
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Dry Etching Properties of HfAlO3 Thin Film with Addition O2 gas Using a High Density Plasma

  • Woo, Jong-Chang (Nano Convergence Sensor Research Section, Electronics and Telecommunications Research Institute) ;
  • Lee, Yong-Bong (Convergence Components & Materials Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Kim, Jeong-Ho (Department of Computer Engineering, Hanbat National University)
  • 투고 : 2014.02.07
  • 심사 : 2014.05.19
  • 발행 : 2014.06.25
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초록

We investigated the etching characteristics of $HfAlO_3$ thin films in $O_2/Cl_2/Ar$ and $O_2/BCl_3/Ar$ gas, using a high-density plasma (HDP) system. The etch rates of the $HfAlO_3$ thin film obtained were 30.1 nm/min and 36 nm/min in the $O_2/Cl_2/Ar$ (3:4:16 sccm) and $O_2/BCl_3/Ar$ (3:4:16 sccm) gas mixtures, respectively. At the same time, the etch rate was measured as a function of the etching parameter, namely as the process pressure. The chemical states on the surface of the etched $HfAlO_3$ thin films were investigated by X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched $HfAlO_3$ thin films. These surface analyses confirm that the surface of the etched $HfAlO_3$ thin film is formed with nonvolatile by-product. Also, Cl-O can protect the sidewall due to additional $O_2$.

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