• Bulletin of the Korean Chemical Society
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• 제19권8호
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• pp.856-862
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• 1998

Vanadium oxide catalyst supported on ZrO2-WO3 was prepared by adding the Zr(OH)4 powder into a mixed aqueous solution of ammonium metavanadate and ammonium metatungstate followed by drying and calcining at high temperatures. The characterization of prepared catalysts was performed using solid-state 51V NMR and FTIR. In the case of calcination temperature at 773 K, for the samples containing low loading V2O5 below 18 wt % vanadium oxide was in a highly dispersed state, while for samples containing high loading V2O5 equal to or above 18 wt % vanadium oxide was well crystallized due to the V2O5 loading exceeding the formation of monolayer on the surface of ZrO2-WO3. The ZrV2O7 compound was formed through the reaction Of V2O5 and ZrO2 at 873 K and the compound decomposed into V2O5 and ZrO2 at 1073 K, which were confirmed by FTIR and 51V NMR.

• 한국안광학회지
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• 제3권1호
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• pp.237-242
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• 1998

$80SiO_2-20TiO_2$(mol%)의 무색투명한 비정질 박막을 현미경용 슬라이드 유리판과 사파이어 위에 tetraethyl orthosilicate와 titanium trichloride의 전구체 용액을 사용하여 스핀코팅방법으로 제조하였다. 코팅 후 $750^{\circ}C$에서 열처리된 박막은 높은 투과율과 낮은 반사율을 보였다. 슬라이드 유리판에 코팅한 $SiO_2-TiO_2$ 박막의 경우에 나트륨이온과 산소 간의 강한 상호작용에 의하여 고온과 높은 습도에서도 안정성이 우수하였다.

• 한국세라믹학회지
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• 제33권7호
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• pp.832-838
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• 1996

Thermite reaction products of MgO and Al were added to MgO-C refractory to improve the properties of corrosion against the attack of slag, oxidation and mechanical spalling. Corrosion rate of MgO-C-MgAl2O4 spinel refractory at the ratio of 3.3(CaO/SiO2) slag was smaller than that of MgO-C and MgO-C-Al refractory. The excellent corrosion resistance of the MgO-C-MgAl2O4 spinel refractory against the slag attack was appeared by Al and MgAl2O4 spinel with high melting point and corrosion resistance and the high thermal conductivity and low thermal expansion of AIN. Hot M.O.R at 140$0^{\circ}C$ and the resistance of oxidation weight loss at 90$0^{\circ}C$ were 210kg/cm2 and -12% respectively.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.64.2-65
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• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• Transactions on Electrical and Electronic Materials
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• 제13권5호
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• pp.262-265
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• 2012

The Microstructure and nonlinear electrical properties of the ZPCCYT (ZnO-$Pr_6O_{11}$-CoO-$Cr_2O_3$-$Y_2O_3$-$Tb_4O_7$) varistors were investigated for different amounts of $Tb_4O_7$. The addition of $Tb_4O_7$ has a significant effect on microstructure and electrical properties. Analysis of the microstructure indicated that the ceramics consisted of ZnO grain as a main phase and a few secondary phases as a mix of $Pr_6O_{11}$, $Y_2O_3$, and $Tb_4O_7$. As the amount of $Tb_4O_7$ increased, the sintered densities of pellets increased from $\rho$ = 5.70 to $5.78g/cm^3$ and the average grain size decreased from d = 4.8 to $3.6{\mu}m$. The increase in the amount of $Tb_4O_7$ increased from $E_B$ = 7,473 to 10,035 V/cm and from ${\alpha}$ = 39.7 to 52.2. In particular, it was found that the ceramics modified with 1.0 mol% in the amount of $Tb_4O_7$ are suited for the varistors for high voltage in the light of a high sintered density and a high voltage gradient.

• 한국결정성장학회지
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• 제29권4호
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• pp.160-166
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• 2019

산화세륨($CeO_2$)는 고체산화물연료전지, 자동차 삼원 촉매, 산소 캐패시터 소재 등의 고온환경에서 구동되는 촉매 응용분야에 널리 활용되고 있으며 중요한 희토류 산화물 중에 하나이다. 고온 환경에서 $CeO_2$의 우수한 촉매 활성을 유지하기 위하여 초기 합성단계에서 높은 비표면적을 갖는 미세구조제어 연구와 나노 미세구조가 고온 열 사이클과 산화-환원 사이클 변화에서 안정하도록 하는 연구가 필요하여 많은 연구가 진행되고 있다. 따라서 본 연구에서는 탄산염 침전법의 전구체 결정화 단계에서의 이방성을 정밀 제어하여 고 비표면적의 flower-like $CeO_2$를 성공적으로 합성할 수 있었다. 또한, 서로 다른 탄산염이온 침전제의 침전 반응 경로 제어를 통한 침전 수화물 전구체의 이방적 결정 특성으로부터 최종 고 비표면적 $CeO_2$ 산화물의 미세구조 제어와 고온 안정 제어를 확인하고 특성을 평가하였다.

• Journal of Electrochemical Science and Technology
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• 제11권4호
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• pp.399-405
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• 2020

Hollow copper oxide/multi-walled carbon nanotubes (CuO/MWCNT) composites were fabricated via an optimized infiltration-reduction-oxidation method, which is more facile and easy to control. The crystalline structure and morphology were characterized by X-ray diffraction (XRD), and transmission electron microscopy (TEM). The as-prepared CuO/MWCNT composites deliver an initial capacity of 612.3 mAh·g^-1 and with 80% capacity retention (488.2 mAh·g^-1) after 100 cycles at a current rate of 0.2 A·g^-1. The enhanced electrochemical performance is ascribed to the better electrical conductivity of MWCNT, the hollow structure of CuO particles, and the flexible structure of the CuO/MWCNT composites.

• 한국재료학회지
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• 제24권4호
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• pp.207-213
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• 2014

Flexible $BaTiO_3$ films as dielectric materials for high energy density capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $BaTiO_3$ films were dependent on the sputtering pressure during sputtering. The RMS roughness and crystallite size of the $BaTiO_3$ increased with increasing sputtering pressure. All $BaTiO_3$ films had an amorphous structure, regardless of the sputtering pressures, due to the low PET substrate temperature. The composition of films showed an atomic ratio (Ba:Ti:O) of 0.9:1.1:3. The electrical properties of the $BaTiO_3$ films were affected by the microstructure and roughness. The $BaTiO_3$ films prepared at 100 mTorr exhibited a dielectric constant of ~80 at 1 kHz and a leakage current of $10^{-8}A$ at 400 kV/cm. Also, films showed polarization of $8{\mu}C/cm^2$ at 100 kV/cm and remnant polarization ($P_r$) of $2{\mu}C/cm^2$. This suggests that sputter deposited flexible $BaTiO_3$ films are a promising dielectric that can be used in high energy density capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

• ETRI Journal
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• 제35권6호
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• pp.1156-1159
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• 2013

We investigate the characteristics of $Cu_2O$ thin films deposited through the addition of $N_2$ gas. The addition of $N_2$ gas has remarkable effects on the phase changes, resulting in improved electrical and optical properties. An intermediate phase ($6CuO{\cdot}Cu_2O$) appears at a $N_2$ flow rate of 1 sccm, and a $Cu_2O$ (200) phase is then preferentially grown at a higher feeding amount of $N_2$. The optical and electrical properties of $Cu_2O$ thin films are improved with a sufficient $N_2$ flow rate of more than 15 sccm, as confirmed through various analyses. Under this condition, a high bandgap energy of 2.58 eV and a conductivity of $1.5{\times}10^{-2}$ S/cm are obtained. These high-quality $Cu_2O$ thin films are expected to be applied to $Cu_2O$-based heterojunction solar cells and optical functional films.

• Bulletin of the Korean Chemical Society
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• 제21권9호
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• pp.913-918
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• 2000

Vanadium oxide catalyst supported on TiO2-ZrO2 has been prepared by adding Ti(OH)4-Zr(OH)4 powder to an aqueous solution of ammonium metavanadate followed by drying and calcining at high temperatures. The char-acterization ofthe prepared catalysts was performed using solid-state 51V NMR and FTIR.In thecase ofcalci-nation temperature at 773 K, vanadium oxide was in a highly dispersed state for the samples containing low loading V2O5 below 25 wt %, but for samplescontaining high loading V2O5 equal to or above 25 wt %, vana-dium oxidewas well crystallized due to the V2O5 loading exceeding the formation of monolayer on the surface of TiO2-ZrO2.The ZrV2O7 compound was formed through the reactionof V2O5 and ZrO2 at 773-973 K, where-as the V3Ti6O17 compound was formedthrough the reaction of V2O5 and TiO2 at 973-1073 K. The V3Ti6O17 compound decomposed to V2O5 and TiO2 at 1173 K, which were confirmed by FTIR and 51V NMR.