• 한국전기전자재료학회논문지
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• 제18권12호
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• pp.1111-1116
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• 2005

ZnO varistor ceramics added a glass-frit 0.03 $wt\%$ were fabricated with variation of sintering temperature. The sintering temperature and time were $1125^{\circ}C\~1200^{\circ}C$ and 2 h. The average grain sizes increased and the varistor voltage decreased with increasing the sintering temperature. The values of the specimen sintered at $1200^{\circ}C$ were $23.7\;{\mu}m$ and 329 V, respectively. The leakage current of all specimens was less than $1\;{\mu}A$ at DC $82\%$ of varistor voltage. The clamping voltage ratio of the specimen sintered at $1175^{\circ}C$ was 1.37. The endurance of surge current and the deviation of varistor voltage of the specimen sintered at $1175^{\circ}C$ were 6400 $A/cm^2$ and ${\Delta}-2.81\%$, respectively. After the High Temperature Load Test(HTLT) at $85^{\circ}C$ for 1000 h, the specimen sintered at $1175^{\circ}C$ showed the lowest deviation of varistor voltage of ${\Delta}-1.92\%$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.185-188
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• 2004

A diode structure of field emission lamps based upon carbon-nanotube is studied. The single-walled carbon nanotubes(SWNTs) were produced by arc discharge method. We made the 1-inch diode type flat lamp using CNTs. We applied anode voltage gradually to refine the field emission behavior of emitter in dynamic vacuum system to study the emission current. the brightness and efficiency, etc. The field emission properties was estimated by varying gaps between the cathode and anode, contents of the glass frit. The good luminous efficiency is showed in the gap $900{\mu}m$, $1200{\mu}m$ and contents of the proper glass frit. For the upper conditions, the luminous efficiencies were respectively 23.30, 11.12 1m/W.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.144-150
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• 2013

A New Ag-pastes were developed for integrating the high efficiency mono-Si solar cell. The pastes were the mixture of 84 wt% Ag, 2 wt% glass frit, 11 wt% solvent of buthyl cabitol acetate, and 3 wt% additives. After fabricating the Ag-pastes by using a 3-roll mill, they were coated on a $SiN_x$/n+/p- stacks of a commercial mono-Si solar cell. And the post-thermal process was also optimized by varying the process conditions of peak temperature. The optimized solar cell efficiency on a 6-inch mono-Si wafer was 18.28%, which was the one of the world best performances. It meaned that the newly developed Ag-paste could be adopted to fabricate a commercial bulk Si solar cell.

• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.652-659
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• 1996

Sintering characteristics and electrical properties of xPb(Mg$_{1}$8/Te$_{1}$8/Mn$_{1}$4/Nb$_{1}$2/) $O_{3}$-(1-x) Pb (Zr$_{1}$2/ $Ti_{1}$2/) $O_{3}$ (x=0.075, 0.1, 0.125) ceramics are investigated. A sintering temperature of ceramics could be reduced to 950.deg. C by a reaction between PbO and B site compound material. The physical properties of 0.1Pb(Mg, Te, Mn, Nb) $O_{3}$ - 0.9Pb(Zr, Ti) $O_{3}$ bulk ceramic with 3wt% glass frit(0.857PbO-0.143W $O_{3}$) were following : den = 7.95 g/cm$^{3}$, T$_{c}$=340.deg. C, .epsilon.$_{33}$= 754, k$_{31}$=0.3 and Q.=1780. The 3-layer piezoelectric transformer by using a tape casting method showed a good monolithic structure, and its voltage setup ratio was 2.5 times higher than that of a single device by using bulk ceramics.s.s.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.307-308
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• 2005

ZnO varistor ceramics were fabricated as a function of the sintering temperature from $1125^{\circ}C$ to $1200^{\circ}C$ with glass-frit 0.03wt% addition. The average grain size was increased from 10.4 ${\mu}m$ to 23.7 ${\mu}m$, and varistor voltage was decreased from 538 V to 329 V with rising of the sintering temperature. The nonlinear coefficient a showed similar value from 75 to 80 and leakage current of all specimens exhibited the result of $1{\mu}A$ at 82% of varistor voltage. But the clamping voltage ratio of the specimens sintered at $1175^{\circ}C$ was 1.37 at 25A [$8/20{\mu}s$]. Also, endurance of surge current and deviation of varistor voltage of sintered specimens at $1175^{\circ}C$ were $6400A/cm^2$, $\Delta$-3.32%, respectively.

• 한국응용과학기술학회지
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• 제30권4호
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• pp.575-585
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• 2013

본 연구는 고상폐기물인 준설토와 혼합물질인 점토 및 유리프리트를 이용하여 기능성을 갖는 건축자재용으로의 재활용 가능성을 검토하고자 실시되었다. D항만 준설토의 중금속 함량은 Zn이 526.0~13,150.1 mg/kg의 범위를 나타내는 등 심한 오염상태이었다. 준설토(30P)의 주요 화학조성은 $SiO_2$(48.30 wt%), $Al_2O_3$(16.60 wt%), CaO(10.10 wt%), $Fe_2O_3$(7.75 wt%)이었으며, 점토는 $SiO_2$가 70.82 wt%, $Al_2O_3$ 18.78 wt%, 유리프리트는 $SiO_2$가 71.75 wt%, CaO 13.99 wt%, $Na_2O$ 8.51 wt% 함유되어 있었다. 준설토를 점토에 10~40 wt% 첨가한 후 $1,000^{\circ}C$와 $1,100^{\circ}C$에서 소성한 시편의 압축강도는 각각 $132.6{\sim}178.5kgf/cm^2$와 $581.2{\sim}793.7kgf/cm^2$이었다. 준설토가 40 wt% 첨가된 경우(SC46) $1,100^{\circ}C$에서 소성한 경우가 $793.7kgf/cm^2$로 $1,000^{\circ}C$에서 소성한 경우의 $153.0kgf/cm^2$ 보다 5배 이상 높게 나타나 $1,100^{\circ}C$ 온도가 소성에 더 적합한 것으로 판단되었으며, KS 1종벽돌 기준을 만족시켰다. 또한, 시편의 용출시험 결과 폐기물관리법상 지정폐기물 판정기준치를 크게 하회하는 것으로 나타났다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.898-901
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• 2006

To fabricate mono layer green sheet (MLGS) of transparent dielectric for PDP front panel, dispersion of transparent dielectric slurry and various properties of green sheets were examined as a function of amount and kinds of organic additives. Sedimentation height and viscosity of slurry were measured to determine proper types and amount of dispersant in non-aqueous system transparent dielectric slurry. Many MLGS having various ratios of the transparent dielectric glass frit, binder and plasticizer were fabricated. Finally we got the transparent dielectric layer of high transparency and free from residual pore might be remained in the gap between the electrodes.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.814-817
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• 2003

The sintering behavior of $BaO-B_{2}O_{3}-ZnO$, which is Pb-free glass-ceramic system, was examined as functions of the composition and the amount and particle size of $Al_{2}O_{3}$ filler. Different kinds of modifiers were added and $Al_{2}O_{3}$ fillers with different particle sizes ($1.5{\mu}m$ and $4.5{\mu}m$) were added. The glass frit-filler composites were sintered in the temperature range $520{\sim}580^{\circ}C$. X-ray diffraction results revealed that some of the composites crystallized during sintering. Dielectric constant and thermal expansion coefficient the glass-ceramics were analyzed.

• 한국레이저가공학회지
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• 제11권3호
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• pp.10-15
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• 2008

This study is aimed to analyse the laser glass bonding process numerically. Due to the viscoelastic behaviour of glass, the extremely large deformation of the frit seal is resulted continuously over the transition temperature, so that the thermal boundary condition be changed in the entire calculation process. The commercial FEM algorithm is restrictively able to remesh the large geometrical boundary shape and to adapt the boundary conditions simultaneously. According to our manual adaptation of increasing the laser line intensity to 700 mW/mm, it is possible to estimate the thermal glass bonding process under the fracture stress in principle. But it should be studied further in the case of high laser line intensity.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.51-53
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• 2004

온도보상용 적층 칩 캐패시터 제작에 있어 다음과 같은 실험 결과를 얻을 수 있었다. 적층 칩 캐패시터의 제작에 있어 용량은 재료자제의 유전율과 압력 조건에 따라 변화함을 볼 수 있으며 설계시 이를 고려해야 한다. 또한, 외부 전극의 경우 glss frit 선정이 중요한 변수임을 확인하였으며 $T_s$에 따라 glass frit을 선정하여야하며 열충격 및 소결성 향상을 위한 glass을 동시에 적용하는 것이 유리함을 확인하였다. Ni 내부전극 적용시의 고주파 특성을 검토한 결과 Pd 전극과는 유사한 경향을 보이나 Ag-Pd에 비해서는 우수한 손실특성을 보여주고 있다.