Electrical properties of ZnO varistors with sintering temperature

소결온도에 따른 ZnO varistor의 전기적 특성

  • 조현무 (서남대학교 전기전자공학부) ;
  • 이종덕 (서남대학교 전기전자공학부) ;
  • 박상만 (서남대학교 전기전자공학부) ;
  • 이성갑 (경상대학교 세라믹공학과)
  • Published : 2005.07.07

Abstract

ZnO varistor ceramics were fabricated as a function of the sintering temperature from $1125^{\circ}C$ to $1200^{\circ}C$ with glass-frit 0.03wt% addition. The average grain size was increased from 10.4 ${\mu}m$ to 23.7 ${\mu}m$, and varistor voltage was decreased from 538 V to 329 V with rising of the sintering temperature. The nonlinear coefficient a showed similar value from 75 to 80 and leakage current of all specimens exhibited the result of $1{\mu}A$ at 82% of varistor voltage. But the clamping voltage ratio of the specimens sintered at $1175^{\circ}C$ was 1.37 at 25A [$8/20{\mu}s$]. Also, endurance of surge current and deviation of varistor voltage of sintered specimens at $1175^{\circ}C$ were $6400A/cm^2$, $\Delta$-3.32%, respectively.

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