• Title/Summary/Keyword: ZnO varistor

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Thermal Distribution Analysis of Triple-Stacked ZnO Varistor (3층으로 적층된 ZnO 바리스터의 열분포 해석)

  • Kyung-Uk Jang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.4
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    • pp.391-396
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    • 2023
  • Recently, as power and electronic devices have increased in frequency and capacity, it has become a major concern to protect electronic circuits and electronic components used in these devices from abnormal voltages such as various surges and pulse noise. To respond to variously rated voltages applied to power electronic devices, the rated voltages of various varistors can be obtained by controlling the size of internal particles of the varistor or controlling the number of layers of the varistor. During bonding, the problem of unbalanced thermal runaway occurring between the electrode and the varistor interface causes degradation of the varistor and shortens its life of the varistor. In this study, to solve the problem of unbalanced heat distribution of stacked varistors to adjust the operating voltage, the contents of the ZnO-based varistor composition were 96 wt% ZnO, 1 mol% Sb2O3, 1 mol% Bi2O3, 0.5 mol% CoO, 0.5 mol% MnO, and 1 mol% TiO2. A multi-layered ZnO varistor was modeled by bonding a single varistor with a composition in three layers according to the operating voltage. The thermal distribution of the triple-layered ZnO varistor was analyzed for the thermal runaway phenomenon that occurred during varistor operation using the finite element method according to Comsol 5.2.

ZnO Varistor의 이용기술

  • 오명환
    • 전기의세계
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    • v.30 no.3
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    • pp.140-145
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    • 1981
  • 본고의 내용은 다음과 같다. 1. ZnO Varistor의 전기적 특성 2. ZnO Varistor의 이용방법 3. ZnO Varistor의 장점과 문제점

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A Study on the microstructure and Surge Characteristics of ZnO varistors for distribution Arrester (배전급 피뢰기용 ZnO 바리스터 소자의 미세구조 및 서지 특성에 관한 연구)

  • 김석수;조한구;박태곤;박춘현;정세영;김병규
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.2
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    • pp.190-197
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    • 2002
  • In this thesis, ZnO varistors with various formulation, such as A∼E, were fabricated according to ceramic fabrication method. The microstructure, electrical properties, and surge characteristics of ZnO varistors were investigated according to ZnO varistors with various formulation. In the microstructure, A∼E\`s ZnO varistor ceramics sintered at 1130$\^{C}$ was consisted of ZnO grain(ZnO), spinel phase (Zn$\_$2.33/Sb$\_$0.67/O$\_$4/), Bi-rich phase(Bi$_2$O$_3$) and intergranuler phase, wholly. Lightning impulse residual voltage of A, B, C and E\`s ZnO varistors suited standard characteristics, below 12kV at current of 5kA. On the contrary, D\`s ZnO varistor exhibited high residual voltage as high reference voltage. In the accelerated aging test, leakage current and watt loss of B, C and D\`s ZnO varistors increases abruptly with stress time under the first a.c. stress(115$\^{C}$/3.213kV/300h). Consequently, C varistor exhibited a thermal run away. On the contrary, leakage current and watt loss of A and C\`s ZnO varistors which show low initial leakage current exhibited constant characteristics. After high current impulse test, A\`s ZnO varistor has broken the side of varistor but impulse current flowed. On the contrary, E\`s ZnO Varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After long duration impulse current test, E\`s ZnO varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After high current impulse test and long duration impulse current test, E\`s ZnO varistor exhibited very good characteristics which variation rate of residual voltage is 1.4% before and after test.

Analysis of Thermal Runaway Phenomenon Caused by ZnO Varistor Operation Using Finite Element Method (유한요소법에 의한 ZnO 바리스터 동작 시 발생되는 열폭주 현상 해석)

  • Jang, Kyung-Uk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.4
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    • pp.372-376
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    • 2022
  • Since the ZnO varistor is a semiconductor device, the internal thermal distribution during the varistor operation is recognized as an important factor in the performance and deterioration of the varistor. For an optimal varistor structure design, the thermal runaway phenomenon during the varistor operation was interpreted using the Comsol 5.2 analysis program by a finite element analysis. The maximum temperature of the center measured in the cross section of the ZnO varistor was confirmed to increase as the temperature moved from the lower electrode to the center towards the upper electrode up to 572.6 K. The electrodes are thinned so that the influence of the Schottky barrier is not great. The heat gradient balance is determined to be improved when the electrode of the hybrid form is introduced. The thickness, density, pore distribution, impurity uniformity, and particle size of the ZnO varistor are required, and it is determined that the pyrolysis gradient will be improved regardless of the electrode thickness. When these results are applied to design the ZnO varistor, the optimal structure of the ZnO varistor can be obtained.

Characteristics on the Surge Capability of Bi-based Varistor Fabricated with ZnO Nano-powder (ZnO 나노분말로 제조한 Bi계 바리스터의 써지내량 특성)

  • Wang, Min-Sung;Park, Choon-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.9
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    • pp.862-867
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    • 2006
  • Bi-based nano-varistors and micro-varistors fabricated with each ZnO nano-powder and micro-powder were studied about characteristics on the surge capability in this study. ZnO nano-varistors were sintered in air at $1050^{\circ}C$ for 2 hr. The voltage-current and residual voltage properties of ZnO nano-varistor were compared with their of ZnO micrio-varistor. As a result of these properties, our ZnO nano-varistor has about 3 times at operating voltage as compared with conventional ZnO varistor fabricated with micro-powder and the residual voltage was 8.06 kV at nominal discharge current 101kA in the lighting impulse current test. And then the residual voltage rate 1.72 of our nano-varistor has had better performance than the 1.79 of micro-varistor because ZnO nano-varistor has shown much quick response property because of increasing effective cross-section area. Also, to analysis surge capability took thermal images for pyrexia temperature distribution with each of the varistors after operating varistors. Nano-varistor doesn't have shown local overheating and can confirm accurate temperature grade on the surface of its.

The Characteristic on Energy Capability of Varistor fabricated with ZnO Nano-powder (ZnO 나노파우더로 제작한 Bi계 바리스터의 에너지내량 특성)

  • Wang, Min-Sung;Jeong, Jong-Yub;Song, Min-Jong;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.294-295
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    • 2006
  • Varistor fabricated with ZnO nano-powder was studied about the characteristic of energy capability in this paper. ZnO nano-powder varistor were sintered in air at $1050\;^{\circ}C$. The electrical properties and residual voltage of ZnO nano-powder varistor were obtained. Our ZnO nano-powder varistor has about 3 times of electric field at varistor voltage as compared with commercial ZnO varistor fabricated with micro-powder. In the current impulse withstand test, our nano varistor has had better performance than micro varistor. To analysis energy capability take infrared images for pyrexia distribution of each varistor. ZnO Nano-powder varistor has shown much quick response property because of increasing effective cross-section.

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A Development of ZnO Varistor for Railroad Vehicle d.c. Arrester (전철탑재형 직류피뢰기용 ZnO 바리스터의 개발)

  • Cho, I-Gon;Park, Choon-Hyun;Jung, Se-Young;Song, Tae-Kwon;Kim, Suk-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.552-556
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    • 2002
  • The microstructure and electrical characteristics of A~C's ZnO varistors fabricated according to variable sintering condition, which sintering temperature is $1130^{\circ}C$ and speeds of pusher are A: 2mm/min, B: 4mm/min, C: 6mm/min, respectively, were investigated. In the microstructure, A~C's ZnO varist-ors fabricated variable sintering condition was consisted of ZnO grain(ZnO), spinel phase$(Zn_{2.33}Sb_{0.67}O_4)$ Bi-rich $phase(Bi_{2}O_{3})$, wholly. Varistor voltage of A~C's ZnO varistors sintered at $1130^{\circ}C$ increased in order A < B < C's ZnO varistors. C's ZnO varistor exhibited good characteristics that nonlinear exponent is 31.70. Leakage current of A~C's ZnO varistors exhibited below 2mA at rated voltage. Lightning impulse residual voltage of A's ZnO varistor suited standard characteristics, which is 3.85kV at 2.5kA, 4.4kV at 5kA and 5.16kV at 10kA. After multi lightning impulse residual voltage test of A's ZnO varistor exhibited good discharge characteristics which ZnO varistor reveals no evidence of puncture, flashover, cracking in visual examination. After high current impulse test of A's ZnO varistor exhibited good discharge characteristics, which variation rate of residual voltage is 0.4% before and after test, and revealed no evidence.

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The Electrical Characteristics of ZnO varistor for d.c. Arrester (직류 피뢰기용 ZnO 소자의 전기적 특성)

  • Kim, Seok-Sou;Choi, Ike-Sun;Cho, Han-Gu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.1106-1110
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    • 2003
  • The electrical characteristics of $A{\sim}C's$ ZnO varistors fabricated according to variable sintering condition, which sintering temperature is $l130^{\circ}C$ and speeds of pusher are A: 2mm/min, B: 4mm/min, C: 6 mm/min, respectively, were investigated. The varistor voltage of $A{\sim}C's$ ZnO varistors sintered at $1130^{\circ}C$ increased in order A < B $A{\sim}C's$ ZnO varistors exhibited below 2mA at rated voltage. Lightning impulse residual voltage of A's ZnO varistor suited standard characteristics, which is 3.85kV at 2.5kA, 4.4kV at 5kA and 5.16kV at 10kA. After multi lightning impulse residual voltage test of A's ZnO varistor exhibited good discharge characteristics which ZnO varistor reveals no evidence of puncture, flashover, cracking in visual examination. After high current impulse test of A's ZnO varistor exhibited good discharge characteristics, which variation rate of residual voltage is 0.4% before and after test, and revealed no evidence.

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Development of ZnO Varistor for Distribution Surge Arrester (18kV, 5kA) (배전급 피뢰기(18kV, 5kA)용 ZnO 바리스터 소자 개발)

  • 박춘현;윤관준;조이곤;정세영;서형권
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.212-216
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    • 2000
  • ZnO varistors for distribution surge arrester (18kV, 5kA) were developed and tested microstructure and electrical characteristics. Microstructure of ZnO varistor was consisted of ZnO grain, spinel phase and Bi-rich phase. Average grain size of ZnO varistor was $\mu\textrm{m}$ Reference voltage and lightning impulse residual voltage of ZnO varistor exhibited a good haracteristics above 5.5kV and below 11.56kV, respectively. Consequently, discharge capacity which is the most important characteristics of ZnO varistor for surge arrester exhibited excellent properties above 70kA at twice high-current impulse test. Moreover, variation rate of reference voltage and lightning impulse residual voltage showed below 5% and 2% after high-current impulse test, respectively. Leakage current and watt loss of ZnO varistor will not increase during accelerated aging test at stress condition, such as 3.213kV/$115^{\circ}C$/1000h.

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I-V Characteristics of Praseodymium-Based ZnO Varistors Doped with Neodymium (네오디뮴이 첨가된 프라세오디뮴계 ZnO 바리스터의 I-V 특성)

  • 박춘현;윤한수;남춘우
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.312-316
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    • 1999
  • I-V characteristics of Praseodymium-based ZnO varistor doped with $Nd_2O_3$ in the range 0.0-2.0mol% sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$ were investigated. In the all sides, ZnO varistors sintered at $1300^{\circ}C$ exhibited much better varistor characteristics than that at 135$0^{\circ}C$. All ZnO varistors doped with $Nd_2O_3$ sintered at $1300^{\circ}C$ exhibited good varistor characteristics but particularly ZnO varistor doped with l.Omol% $Nd_2O_3$ exhibited the best characteristics, which the nonlinear is 65.2 and the leakage current is 4.5pA. It is estimated that ZnO varistor doped with l.Omol% $Nd_2O_3$ will begin to be sufficiently used as basic composition to fabricate a good varistor.

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