• Electrical & Electronic Materials
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• v.9 no.7
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• pp.668-673
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• 1996

In this paper, (P $b_{1-x}$ L $a_{x}$)(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ (X=0-13[at%]) thin film were prepared by the Sol-Gel method, Multiple PLZT thin films were spin-coated on the Pt/Ti/ $SiO_{2}$Si substrate. The electrical properties of the films were investigated for varying the annealing temperature. In the PLZT(11/52/48) specimens, the dielectric ocnstant of 1236 and the polarization reversal time of 460[nm] were obtained and the breakdown of the film did not occur up to 1*10$^{10}$ cycles at the voltage of 7[V] by the bipolar acceleration. The remanent polarization and coercive field decreased with increasing the content of La in the range of 0-13[at%] and thin film of the PLZT(11/52/48) showed the value of 2.56[.mu.C/c $m^{2}$] and 21.1[kV/cm], respectively.ly.y.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.51-54
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• 2003

Tb-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60:40 and perovskite phase structure. The effect on the structural and electrical properties of films measured according to Tb content. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Tb-doping. The PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol% Tb. At 100 kHz, the dielectric constant and the dielectric loss of the 0.3 mol% Tb-doped PZT thin film were 1611 and 0.24, respectively The remanent polarization(2Pr) of the 0.3 mol% Tb-doped PZT thin film was $61.4\;{\mu}C/cm^2$ and the coercive field was 61.9 kV/cm. Tb-doped PZT thin films showed improved fatigue characteristics comparing to the undoped PZT thin film.

• Journal of Sensor Science and Technology
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• v.21 no.4
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• pp.311-317
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• 2012

Disposable amperometric screen-printed biosensor strips have been fabricated by a sol-gel encapsulation for the analysis of glucose. The glucose oxidase(GOx) is entrapped in the gel matrix through sol-gel transition of tetraethoxysliane(TEOS). The biosensor is fabricated by GOx containing thin film of TEOS gel on the surface of screen-printed carbon electrode(SPCE). The GOx-containing thin film of TEOS gel offers a one-step modification process on the surface of SPCE. The optimum conditions for glucose determination have been characterized with respect to the applied potential, enzyme loading ratio, and pH. The linear range and detection limit of glucose detection were from 2.0 mM to 16.0 mM and 0.25 mM, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.369-369
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• 2007

ZnO film has been investigated during several decades because it has excellent optical property like a transmittance among the range of visible light for using transparent conducting oxide (TCO) films. But ZnO film has not enough conductivity for applying to TCO devices. Therefore we synthesized platinum nanoparticles and they incorporated into ZnO due to improve the electrical property of ZnO film by sol-gel synthesis method. Also, we fabricated photosensitive ZnO thin film containing Pt nanoparticles by sol-gel process and spin-coating for using photochemical solution deposition. Photosensitive ZnO film could carry out the direct-pattern which allow the etching process to be convenient. The optical and electrical properties of ZnO film with or without various atomic percent of Pt nanoparticles annealed at various temperatures were investigated by using UV-Vis spectroscopy and 4-point probe method, respectively. We characterized the ZnO thin film containing Pt nanoparticles using X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy.

• Journal of IKEEE
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• v.22 no.1
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• pp.1-5
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• 2018

In this research, sol-gel processed CuO p-type thin film transistors were fabricated with copper (II) acetate monohydrate precursors. After $500^{\circ}C$ annealing process, the deposited thin films were fully converted into CuO. We investigated $UV/O_3$ process time effect on electrical characteristics of sol-gel processed CuO thin film transistors. After 600 sec $UV/O_3$ process, the fabricated CuO thin film transistor delivered field effect mobility in saturation regime of $5{\times}10^{-3}\;cm^2/V{\cdot}s$ and on/off current ratio of ${\sim}10^2$.

• Bulletin of the Korean Chemical Society
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• v.27 no.1
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• pp.65-70
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• 2006

An amperometric glucose biosensor has been developed based on the use of the nanoporous composite film of sol-gel-derived zirconia and perfluorosulfonated ionomer, Nafion, for the encapsulation of glucose oxidase (GOx) on a platinized glassy carbon electrode. Zirconium isopropoxide (ZrOPr) was used as a sol-gel precursor for the preparation of zirconia/Nafion composite film and the performance of the resulting glucose biosensor was tuned by controlling the water content in the acid-catalyzed hydrolysis of sol-gel stock solution. The presence of Nafion polymer in the sol-gel-derived zirconia in the biosensor resulted in faster response time and higher sensitivity compared to those obtained at the pure zirconia- and pure Nafion-based biosensors. Because of the nanoporous nature of the composite film, the glucose biosensor based on the zirconia/Nafion composite film can reach 95% of steady-state current less than 5 s. In addition, the biosensor responds to glucose linearly in the range of 0.03-15.08 mM with a sensitivity of 3.40 $\mu$A/mM and the detection limit of 0.037 mM (S/N = 3). Moreover, the biosensor exhibited good sensor-to-sensor reproducibility (~5%) and long-term stability (90% of its original activity retained after 4 weeks) when stored in 50 mM phosphate buffer at pH 7 at 4 ${^{\circ}C}$.

• Journal of the Korean Ceramic Society
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• v.37 no.5
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• pp.425-431
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• 2000

Cobalt ferrite thin films on Corming glass substrate were fabricated by a sol-gel method. Cobalt ferrite thin films with the grain size of 20-35 nm and thickness of 50nm were obtained. Rapid thermal annealing (RTA) and Annealing processes were adopted for comparison of characteristics of the films. Coercivity values were changed with thermal condition and magnetization values were increased as a function of soaking time. With prolonged soaking time, however, it was decreased because of the diffusion of cations from the glass substrate. The RTA process in preparation of cobalt ferrite thin film was the effective way to prevent and to form a single spinel phase in reduced soaking time. The film heated at 600$^{\circ}C$ for 30 minutes by RTA had coercivity of 2,600 Oe, saturation magnetization 460 emu/㎤, and Mr$.$$\delta$ of 1.43 memu/$\textrm{cm}^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.552-555
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• 2008

The purpose of this study was to find a best condition of fabricating lead zirconate thin film by sol-gel method, especially to find mol ratio and post annealing temperature. Lead zirconate thin film was made by spin coating method. The ratios of Pb and Zr of precursors were 1:0.8, 1:1.0, and 1:1.2. Annealing temperature of films were $600^{\circ}C$, $700^{\circ}C$, and $800^{\circ}C$ for 1 minute. Crystal structure was observed from XRD and antiferroelectricity was observed from hysteresis curves. The optimum mol ratio of Pb:Zr is 1:0.8 and annealing temperature is $800^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.19 no.3
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• pp.202-208
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• 2010

This study examined the dependency of crystalline orientation and electric properties of sol-gel PZT film on hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The PZT thin films were prepared by using 2-Methoxyethanol-based sol-gel method and spin-coating on Pt/Ti/$SiO_2$/Si substrates. The 1-${\mu}m$-thick PZT films were coated and then fired in a furnace by direct insert method. The highly (111) oriented PZT film of pure perovskite structure could be obtained. We could control the degree of orientation by various parameters such as hydrolysis, a $PbTiO_3$ seed layer and a concentration of sol-gel solution. The highest measured remanent polarization, dielectric constant and piezoelectric coefficient are $24.16\;{\mu}C/cm^2$, 2808, and 159 pC/N, respectively.

• Journal of Pharmaceutical Investigation
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• v.29 no.2
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• pp.127-136
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• 1999

In order to eliminate demerits of conventional dosage forms, dipotassium glycyrrhizate was formulated as a slim mucoadhesive film type dosage form. The mucoadhesive drug layer gel containing dipotassium glycyrrhizate was prepared using $Noveon^{\circledR}$ AA-1, hydroxypropylcellulose-M, ethylcellulose N 100 and citric acid, and the protective layer gel by using ethylcellulose N 100, $Eudragit^{\circledR}$ RS and castor oil. The viscosity of drug layer gel of mucoadhesive film was enhanced as the increased amount of $Noveon^{\circledR}$ AA-1 or hydroxypropyl cellulose-M. The drug content was unifonnly $1160{\pm}14.6\;{\mu}g$, and was varied within 3.5%. The optimum film dosage form showed a good fluidity and malleability of drug layer, with 179 g of thickness, pH 5.7, 411 min of in vitro adhesion time and 172 g in gravity adhesive strength. The release time of drug from the mucoadhesive film was significantly shorter but was delayed when polymers such as ethylcellulose was added. From these results, the new mucoadhesive film may be effective for the treatment of aphthous stomatitis.