• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.299-301
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• 2000

Analytical expression for the breakdown voltage of the gated diodes were derived as f function of doping concentration and gate voltage, and verified by numerical simulations using ATLAS. The analytical results are in good agreement with simulation results within 5% error when the gate voltage changes from -50V to 130V in case of ND = $1\times1015 cm^{-3}$ and within 10% error when the doping concentration is changed from $5\times1014 cm^{-3}\; to\; 2\times1015 cm6{-3}$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1263-1265
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• 2007

The electrical characteristics of low temperature poly-Si (LTPS) thin-film transistors (TFT) with channel parallel and perpendicular to the direction of lateral growth were studied. The poly-Si film was crystallized using sequential lateral solidification (SLS) laser crystallization technique. The channel orientation dependent turn-on characteristics were investigated by using gated-diodes and capacitance-voltage measurements

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1205-1208
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• 1995

The optically-gated p-i-n diode switches have been fabricated with gold-compensated silicon. The turn-on and turn-off delay times and the rise and fall times were measured as a function of optical power level, bias, and pulse width. The turn-on characteristics shows a strong dependence an optical pulse power and a delay time(${\delta}{\iota}$) between two pulses, but a weak dependence on the width of optical pulse. Actually there is no turn-off delay in gold-doped p-i-n switches and the fall time is negligible.

• Journal of Information Display
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• v.7 no.2
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• pp.16-21
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• 2006

The effect of improvement on the surface morphology of screen-printed carbon nanotube (CND) films was studied by using the optically clear poly-dimethylsiloxane (PDMS) elastomer for surface treatment. After the PDMS activation treatment was applied to the diode-type CNT cathode, the entangled carbon nanotube (CNT) bundles were broken up into individual free standing nanotubes to remarkably improve the field-emission characteristics over the as-deposited CNT film. Also, the cathode film morphology of a top gated triode-type structure can be treated by using the proposed surface treatment technique, which is a low-cost process, simple process. The relative uniform emission image showed high brightness with a high anode current. This result shows the possibility of using this technique for surface treatment of large-size field emission displays (FEDs) in the future.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.98-104
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• 2006

The conventional burst-mode APC(Automatic Power Control) circuit had an effective structure that was suitable for a low power consumption and a monolithic chip. However, as data rate was increased, it caused errors due to the effect of the zero density. In this paper, we invented a new structured peak-comparator which could compensate the unbalance of the injected currents using double gated MOS and MOS diode. And we proposed a new burst-mode APC adopting it. The new peak-comparator in the proposed APC was very robust to zero density variations maintaining the correct decision point of the current comparison at high data rate. It was also suitable for a low power consumption and a monolithic chip due to lack of large capacitors.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.585-593
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• 2015

In the nanoscale regime, many multigate devices are explored to reduce their size further and to enhance their performance. In this paper, design of a novel device called, Triple Material Surrounding Gate Tunnel Field effect transistor (TMSGTFET) has been developed and proposed. The advantages of surrounding gate and tunnel FET are combined to form a new structure. The gate material surrounding the device is replaced by three gate materials of different work functions in order to curb the short channel effects. A 2-D analytical modeling of the surface potential, lateral electric field, vertical electric field and drain current of the device is done, and the results are discussed. A step up potential profile is obtained which screens the drain potential, thus reducing the drain control over the channel. This results in appreciable diminishing of short channel effects and hot carrier effects. The proposed model also shows improved ON current. The excellent device characteristics predicted by the model are validated using TCAD simulation, thus ensuring the accuracy of our model.

• Korean Journal of Materials Research
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• v.17 no.3
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• pp.173-178
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• 2007

Carbon nanotube cathodes(CNT cathodes) with a trench structure similar to gated structure of triode-type cathode were fabricated by a screen printing method using multi-walled carbon nanotubes. The effects of surface treatments on CNT cathodes were investigated for high efficiency field emission displays(FEDs). A liquid method easily removed the organic residue and protruded the CNTs. Field emission properties were measured by using a diode-type mode. The liquid method produced a turn-on field of $1.4V/{\mu}m$. The emission current density was measured about $3.1mA/cm^{2}$ at the electric field of $3V/{\mu}m$. The liquid method showed a high potential applicable to the surface treatment for triode-type FEDs.

• Progress in Medical Physics
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• v.25 no.3
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• pp.128-138
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• 2014

In gated radiation therapy (gRT), due to residual motion, beam delivery is intended to irradiate not only the true extent of disease, but also neighboring normal tissues. It is desired that the delivery covers the true extent (i.e. clinical target volume or CTV) as a minimum, although target moves under dose delivery. The objectives of our study are to validate if the intended dose is surely delivered to the true target in gRT and to quantitatively understand the trend of dose delivery on it and neighboring normal tissues when gating window (GW), motion amplitude (MA), and CTV size changes. To fulfill the objectives, experimental and computational studies have been designed and performed. A custom-made phantom with rectangle- and pyramid-shaped targets (CTVs) on a moving platform was scanned for four-dimensional imaging. Various GWs were selected and image integration was performed to generate targets (internal target volume or ITV) for planning that included the CTVs and internal margins (IM). The planning was done conventionally for the rectangle target and IMRT optimization was done for the pyramid target. Dose evaluation was then performed on a diode array aligned perpendicularly to the gated beams through measurements and computational modeling of dose delivery under motion. This study has quantitatively demonstrated and analytically interpreted the impact of residual motion including penumbral broadening for both targets, perturbed but secured dose coverage on the CTV, and significant doses delivered in the neighboring normal tissues. Dose volume histogram analyses also demonstrated and interpreted the trend of dose coverage: for ITV, it increased as GW or MA decreased or CTV size increased; for IM, it increased as GW or MA decreased; for the neighboring normal tissue, opposite trend to that of IM was observed. This study has provided a clear understanding on the impact of the residual motion and proved that if breathing is reproducible gRT is secure despite discontinuous delivery and target motion. The procedures and computational model can be used for commissioning, routine quality assurance, and patient-specific validation of gRT. More work needs to be done for patient-specific dose reconstruction on CT images.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.96-113
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• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.