• Journal of the Korea Institute of Information and Communication Engineering
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• v.22 no.1
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• pp.117-124
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• 2018

Junctionless amorphous InGaZnO thin film transistors with different film thickness have been fabricated. Their device performance parameters were extracted and gate oxide breakdown voltages were analyzed with different film thickness. The device performances were enhanced with increase of film thickness but the gate oxide breakdown voltages were decreased. The device performances were enhanced with increase of temperatures but the gate oxide breakdown voltages were decreased due to the increased drain current. The drain current under illumination was increased due to photo-excited electron-hole pair generation but the gate oxide breakdown voltages were decreased. The reason for decreased breakdown voltage with increase of film thickness, operation temperature and light intensity was due to the increased number of channel electrons and more injection into the gate oxide layer. One should decide the gate oxide thickness with considering the film thickness and operating temperature when one decides to replace the junctionless amorphous InGaZnO thin film transistors as BEOL transistors.

• Journal of the Korean Society for Railway
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• v.20 no.3
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• pp.339-348
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• 2017

Power supply for railway cars can be divided into propulsion system power supply and auxiliary power units (APU). The propulsion system power supply is for propulsion of railway cars, and regenerative braking; the APU provides power for the air compressor, lighting, car control and other auxiliary parts. According to high voltage and high current specifications, generally, an insulated-gate bipolar transistor (IGBT) is adopted for the switching component. For appropriate switching operation, a gate driver unit (GDU) is essentially required. In this paper, the technical trends of GDU for railway cars are analyzed and a design consideration for IGBT GDU is described.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.26 no.3D
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• pp.367-374
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• 2006

This research revealed the operation problems of the current crossing control systems through inspecting and testing the obstacle detection systems and gate control systems for the crossings. To resolve the problems of the crossing control systems, this research developed new algorithms of four-quadrant gate system and obstacle detection systems combing the functions of rasar sensors and magnetic sensors and tested the reliability of the systems. Currently, the obstacle detection systems and gate control systems controls approaching and departing traffic by simply detecting vehicles and obstacles but do not consider traffic movements at the crossings. In addition, they do not make signal cooperation for gate controls. As a result, such inefficient crossing controls result in unsafe gate controls for drivers. Therefore, the newly developed crossing control systems through this study will provide more effective crossing control services with more strengthen information cooperation within control systems. Besides they will help to reduce train crashes at the crossings by gate control systems considering various driving behaviors.

• ETRI Journal
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• v.38 no.4
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• pp.645-653
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• 2016

This paper demonstrates the performance of a metal-substrate power module with multiple fabricated chips for a high current electrical application, and evaluates the proposed module using a 1.5-kW sinusoidal brushless direct current (BLDC) motor. Specifically, the power module has a hybrid structure employing a single-layer heat-sink extensible metal board (Al board). A fabricated motor driver IC and trench gate DMOSFET (TDMOSFET) are implemented on the Al board, and the proper heat-sink size was designed under the operating conditions. The fabricated motor driver IC mainly operates as a speed controller under various load conditions, and as a multi-phase gate driver using an N-ch silicon MOSFET high-side drive scheme. A fabricated power TDMOSFET is also included in the fabricated power module for three-phase inverter operation. Using this proposed module, a BLDC motor is operated and evaluated under various pulse load tests, and our module is compared with a commercial MOSFET module in terms of the system efficiency and input current.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.829-832
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• 2005

This paper describes a wide-range dual-loop Delay Locked Loop (DLL) using Voltage Controlled Delay Line (VCDL) based on Transmission Gate(TG) inverters. One loop is used when the minimum VCDL delay is greater than a half of $T_{REF}$, the reference clock period. The other loop is initiated when the minimum delay is less than $0.5{\times}T_{REF}$. The proposed VCDL improves the dynamic operation range of a DLL. The DLL with a VCDL of 10 TG inverters provides a lock range from 70MHz to 700MHz when designed using $0.18{\mu}m$ CMOS technology with 1.8 supply voltage. The DLL consumes 11.5mW for locking operation with a 700MHz reference clock. The proposed DLL can be used for high-speed memory devices and processors, communication systems, high-performance display interfaces, etc.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.361-362
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• 2016

Presented in this paper is the design of a high voltage switch module made up of MOSFETs, pulse transformers and their gate driver circuits compactly fitted onto a single PCB module. The ease by which the switch modules can be configured (series stacking and/or parallel stacking) to meet future load variations allows for flexible operation of this design. In addition, the detailed implementation of the gate driver circuit for reliable and easier switch synchronization is also described in this paper. The stored energy in the capacitor bank of a 15kV, 4.5kJ/s peak power capacitor charger was discharged using the developed high voltage switch, and by experimental results, the operation of the proposed circuit was verified to be effectively used as a switch for pulse discharging.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1580-1581
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• 2011

The linear accelerator of Pohang Accelerator Laboratory(PAL) will drive a top-up mode operation in PLS-II(Pohang Light Source-II). Due to this kind of the operation mode, the electron gun is expected to have shorter life time of the cathode. Further in the PLS-II, two gate valves will be installed in front of the electron gun. The distance between the pre-bunching section and the electron gun will increase by 400 mm compared to the existing system due to the insertion of these gate valves. As a result the incident electron beam. One of the goals to improve the beam pulse width is by incorporating suitable biased voltage. In this paper, we will present test results of beam pulse width as a function of different biased voltage and focusing solenoid coil.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.875-878
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• 1998

In this thesis, we present efficient techniques to reduce the switching activity in a CMOS combinational logic network based on local logic transforms. But this techniques is not appropriate in the view of testability because of deteriorating the random pattern testability of a circuit. This thesis proposes a circuit design method having two operation modes. For the sake of power dissipation(normal operation mode), a gate output switches as rarely as possible, implying highly skewed signal probabilities for 1 or 0. On the other hand, at test mode, signals have probabilities of being 1 or 0 approaching 0.5, so it is possible to exact both stuck-at faults on the wire. Therefore, the goals of synthesis for low power and random pattern testability are achieved. The hardware overhead sof proposed design method are only one primary input for mode selection and AND/OR gate for each redundant connection.

• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.17-20
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• 2006

This paper presents of a new type of memory cell that could potentially replace both DRAM and flash memory. The proposed device cell operates by sensing the state of about 1,000 electrons trapped between unique insulating barriers in the channel region of the upper transistor. These electrons are controlled by a side gate on the transistor, and their state in turn controls the gate of the larger transistor, providing signal gain within the memory cell. It becomes faster and more reliable memory with lower operation voltage. Moreover, the use of a multiple tunnel junction (MTJ) fur the vertical transistor can significantly improve the data retention and operation speed.

• Progress in Superconductivity
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• v.4 no.1
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• pp.37-41
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• 2002

In this work. we have designed two different kinds of Rapid Single Flux Quantum (RSFQ) OR-gates. One was based on the already developed RSFQ cells and the other was aimed to develop a more compact version. In the first circuit, we used a combination of two D Flip-Flops and a merger and in the other circuit we used a combination of RS Flip-Flops and Confluence Buffer. We tested the circuit performance by using the simulation tools, Xic and Wrspice. We obtained the operation margins of the circuit elements by a margin calculation program, and we obtained the minimum operation margins of $\pm$30%. The circuits were laid out, aimed to fabricate by using the existing KRISS Nb process. KRISS Nb process includes the $Nb／Al_2$$O_3$／Nb trilayer fabricated by DC magnetron sputtering and the reactive ion etching technique for the definition of the features. The major tools used in the layouts were Xic and L-meter.