• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.525-529
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• 1999

The influence of ambient gases on field emission performance of Mo-field emitter array(FEA) in the frit-sealing step of field emission display(FED) packaging process was investigated. Mo-tip FEA was mounted on the glass substrate having a surrounded frit(Ferro FX11-137) and fired at $415^{\circ}C$ in the ambient gases of air, $N_2$ and Ar. The Ar gas was proved to be most proper ambient among the used gases through evaluating the turn-on voltage and field emission current of the fired Mo-tip FEA devices. It was confirmed that the Mo surface fired in Ar ambient was less oxidized when compared with another ones annealed in air and Ar ambient by the AFM, XPS, AES and SIMS analysis. Finally, the 3.5 inch-sized Mo-tip FED, which was packaged using frit-sealing process in the Ar ambient, was proposed.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.33-38
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• 1996

In thick film resistors, the characteristics of the frit and the reaction between glass frit and conductor material play an important role for their electrical properties. In this study, various glass frits in the system of $60RO{\cdot}20SiO_2$ $15B_2O_3{\cdot}5Al_2O_3$(RO=PbO, ZnO, CdO; mole%) were mixed with $RuO_2$ and coated on 96% alumina substrate. Only the glass frit containing PbO was reacted with $RuO_2$in$RuO_{2+}$-thick film resistor and produced the new crystalline phase of $Pb_2Ru_2O_{65}$. Their electrical resistivities strongly depend on the amount of $Pb_2Ru_2O_{65}$ crystalline phase obtained, which varied with firing temperature. The sheet resistivities of these resistors were varied from $10^3\; to\; 10^6\;{\Omega}/{\Box}$ depending on heat treatment, and the absolute value of TCR was decreased as the heat treatment temperature increaed. However, $RuO_2$ did not reacted with the glass frits containing ZnO nor CdO, and the resulting showed very high sheet resistivities.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1225-1228
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• 2006

In the CNT paste for field emission, PbO frit had a fatal influence on CNTs by accelerating a decomposition of CNTs during firing. In the thermogravimetric analysis on the mixtures of CNTs and other ingredients, it was evident that CNTs began to burn out at ${\sim}350^{\circ}C$ by reacting with PbO. This problem was overcome by replacing the PbO frit by the Pb-free frit such that most of CNTs could survive during firing. Consequently, the emission current of the CNT paste prepared using the lead-free frit was improved as much as 250 %, compared to the PbO-containing one. The CNT paste was further optimized by adding a dispersant, whose dispersibility was assessed by measuring the resistance of the paste. With 10% dispersant added, the emission properties of the paste was greatly enhanced as 50 times higher as those of the paste without a dispersant.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.690-695
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• 2016

Induction cooktop has a great attention due to its safety, quick heating and cleanness compared to gas oven. However, the materials for induction cookware is limited to steel or stainless-steel which has the magnetic property. Recently, it has been tried to apply various porcelain to induction cookware after printing the silver layer on the bottom of cookware plates and co-firing at high temperature. Glass frits are added in the silver paste to improve an adhesion force between porcelain materials containers and transferred silver layer. The hybrid silver pastes for induction cookware requires the proper electrical resistance and the thermal conductivity with base plates. After sintering process at $800^{\circ}C$, a part of melted glass migrated to the porcelain and the rest of the glass frit was exposed to the surface. It was confirmed that most of the glass frit formed an adhesion layer between the porcelain and transferred silver layer that enhances the adhesion force.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.416-422
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• 2013

Cullet-loess tile bodies are successfully fabricated using cullet, loess, hollow microspheres, and sintering additives (borosilicate glass frit, boric acid, or fumed silica) as starting materials. The effects of the additive composition and sintering temperature on the sintered density and flexural strength of the cullet-loess tile bodies are investigated. The sintered density of the cullet-loess tile bodies increases with an increase in the sintering temperature as a result of the enhanced densification of pore walls through the viscous flow of a liquid phase formed from the glass frit and sintering additives. The flexural strength of the cullet-loess tile bodies increases with increases in the sintering temperature and the cullet content in the starting composition. A maximal flexural strength of 40 MPa is obtained in cullet-loess tile bodies sintered with glass frit at $800^{\circ}C$ in air.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.463-463
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• 2008

The glass frit has been used in transparent dielectric, barrier rib and electrode of PDP (Plasma display panel). In PDP fabrication, the firing temperature of glass frit is normally 550~$580^{\circ}C$ with conventional heating. However, there are a problem that silver in electrode is diffused throughout the transparent dielectric. For inhibiting the Ag diffusion we considered use of the microwave heating. We investigated firing of glass frit compared between conventional and microwave heating. After firing by two types of heating, the diffusion of silver is determined using a optical microscope and UV-spectrometer. Based on the our results, the microwave heating should be a candidate to heating source for high efficacy in PDP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.200-207
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• 2011

Abstract: The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without $Bi_2O_3$) and HBF-B(with $Bi_2O_3$) were made from $SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $K_2O$, ZnO, MnO, $ZrO_2$, $Bi_2O_3$. And Ag based conductor pastes and $RuO_2$ based resistor paste were prepared by mixed with these frits and functional phase(Ag and $RuO_2$), and organic vehicle. The properties of thick film conductor and resistor sintered at $850^{\circ}C$ were studied after printing on $Al_2O_3$ substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.844-849
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• 2011

Two kind of Ag-pastes were prepared for integrating the bulk Si solar cell. One is the Ag-paste with Pb-based glass frit and the other is that with Bi-based glass frit. The pastes were the mixture of 84 wt% Ag, 2 wt% glass frit, 11 wt% solvent of buthyl cabitol acetate, and 2 wt% additives. After fabricating the Ag-pastes, they was coated on a $SiN_x$/n+/p- stacks of a commercial mono-Si solar cell. The solar cell efficiency was 17.6% in the case of the Pb-based Ag-paste. However that was 16.2% in the solar cell integrated with the Bi-based Ag-paste. The lower performance in Bi-based Ag-paste was caused by the higher series resistance and the lower shunt resistance in comparison with the Pb-based Ag-paste.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.206-210
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• 2010

$BaTiO_3$ dielectric ceramics are widely used to multi-layer ceramic capacitor. The $BaTiO_3$ powder was synthesized at $950^{\circ}C$ by using a solid state reaction and grinded by using a high-energy mill. And then, 2.53 wt% glass frit was added to the synthesized $BaTiO_3$ powders for lowering the sintering temperature. The mixed powders were sintered at various temperatures of $1170^{\circ}C$, $1200^{\circ}C$, $1230^{\circ}C$. Microstructures of the sintered $BaTiO_3$ ceramics were inspected by SEM and crystal structures were analyzed by XRD method. The relative dielectric constant was measured by using a impedance/gain phase analyzer. The synthesized $BaTiO_3$ powder had the tetragonal perovskite structure without secondary phase and the particle size was below 200 nm. The relative densities measured at the samples sintered at the temperature above $1200^{\circ}C$ were about 95%. The relative dielectric constant showed maximum value of 2310, which was measured in the specimen sintered at $1200^{\circ}C$. From these results, we could know that the added glass frit had effects on both lowering the sintering temperature and improving the dielectric property.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.181-185
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• 2016

One of the important issues for fabricating the microelectronic display devices such as FED, PDP, and VFD is to obtain a high vacuum level inside the panel. In addition, sustaining the initial high vacuum level permanently is also very important. In the conventional packing technology using a tabulation method, it is not possible to obtain a satisfiable vacuum level for a proper operation. In case of FED, the poor vacuum level results in the increase of operating voltage for electron emission from field emitter tips and an arcing problem, resultantly shortening a life time. Furthermore, the reduction of a sealing process time in the PDP production is very important in respect of commercial product. The most probable method for obtaining the initial high vacuum level inside the space with such a miniature and complex geometry is a vacuum in-line sealing which seals two glass plates within a high vacuum chamber. The critical solution for the vacuum sealing is to develop a frit glass to avoid the bubbling or crack problems during the sealing process at high temperature of about $400^{\circ}C$ under the vacuum environment. In this study, the suitable frit power was developed using a mixture of vitreous and crystalline type frit powders, and a vacuum sealed CNT FED with 2 inch diagonal size was fabricated and successfully operated.