• Geomechanics and Engineering
• /
• v.34 no.2
• /
• pp.155-171
• /
• 2023

Aiming at the grouting treatment of water inflow in karst conduits, a visualized experiment system for conduit-type grouting blocking was developed. Through the improved water supply system and grouting system, and the optimized multisource information monitoring system, the real-time observation of diffusion and deposition of slurry, and the data acquisition of pressure and velocity during the whole process of grouting were realized, which breaks through the problem that the monitoring element is easy to fail due to slurry adhesion in conventional test system. Based on the grouting experiments in static and flowing water, the diffusion and deposition behavior of the quick-setting slurry under different working conditions were analyzed. The temporal and spatial variation behavior of the pressure and velocity were studied, and the blocking mechanism of the grouting were further revealed. The results showed that: (1) Under the flowing water condition, the counter-flow diffusion distance of slurry was negatively correlated with the flow water velocity and the volume ratio of cement and sodium silicate (C-S ratio), and positively correlated with the grouting volume. The slurry deposition thickness was negatively correlated with the flowing water velocity, and positively correlated with the grouting volume and C-S ratio. (2) The pressure increased slowly before blocking of the flowing water and rapidly after blocking in karst conduits. (3) With the continuous progress of grouting, the flowing water velocity decreased slowly first, then significantly, and finally tended to be stable. According to the research results, some engineering recommendations were put forward for the grouting treatment of the conduit-type water inflow disaster, which has been successfully applied in the treatment project of the China Resources Cement (Pingnan) Limestone Mine. This study provided some guidance and reference for the parameter optimization of grouting for the treatment projects of water inflow in karst conduits.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1579-1581
• /
• 1996

The high temperature characteristics of SOI BMFET are analyzed by the numerical simulation and compared with MOS-gated SOI power devices at high temperatures. The proposed SOI BMFET combines bipolar operation in the on-state with unipolar FET operation in the off-state, so that it may be suitable for high temperature operation without any significant degradation of performance such as the leakage current and blocking capability. The simulation results show that SOI BMFET with a higher doped n-resurf layer is the most promising device far high temperature application as compared with MOS-gated SOI power devices, exhibiting the low on-state voltage drop as well as the excellent forward blocking capability at high temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.312-315
• /
• 2003

Basic design of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) by novel punch-through (PT) concept with 5,500v rated voltage is described here. A PT and NPT (non punch-through) concept for the same blocking voltage has been compared in detail. The simulation work indicates that GCT with such PT design exhibits that the forward breakdown voltage is 6,400V which is enough for supporting 5500V blocking. Additionally, the real IGCT turn-off in the mode of PNP transistor has been realized. However, the carrier extraction from N-base to gate terminal will be drastic slowly in terms of NPT structure except for the high on-state voltage drop.

• The Bulletin of The Korean Astronomical Society
• /
• v.44 no.2
• /
• pp.43.2-43.2
• /
• 2019

Tomography is a method to reconstruct three-dimensional structure of an optically thin object. We can obtain the three-dimensional information by combining a number of projected images at different angles. Solar rotational tomography (SRT) is the tomographic method to estimate the coronal structures using the solar rotation. There are a few practical difficulties in solar coronal observation. One of the most crucial difficulty is handling the blocking area by the occulter or the Sun itself. So we have to use the iterative reconstruction for the SRT which can resolve that problem by using the forward modeling. In this study, we propose an alternative method to reconstruct the solar coronal structure: the filtered backprojection (FBP) algorithm. The FBP algorithm is based on the simple analytic solution. Thus it is easy to understand, and the computing cost is much cheaper than that of the iterative reconstruction. Recently we found a solution for the FBP algorithm to the problem of the blocking area in the solar EUV observations. We introduce how to apply the FBP algorithm to the SRT, and show the initial results of the performance test.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.36 no.4C
• /
• pp.207-216
• /
• 2011

Motion compensated extrapolation (MCE) techniques show inferior performance compared to motion compensated interpolation techniques, since only past frames are used in MCE. MCE techniques are used for the reconstruction of corrupted frames, the up-conversion of frame rates and the generation of side information in the distributed video coding system. In this paper, the performance of various MCE techniques are evaluated and an efficient MCE technique using the forward and backward motion estimation is proposed. In the proposed technique, the present frame is extrapolated by averaging two frames which are generated by forward and backward motion estimation respectively. It is shown that the proposed method produces better PSNR results and less blocking phenomena than conventional methods.

• Journal of IKEEE
• /
• v.17 no.4
• /
• pp.428-433
• /
• 2013

In this study, an 4H-SiC Trench MOS Barrier Schottky (TMBS) rectifier which utilizes the trapezoid mesa structure and the upper half of the trench sidewall is proposed to improve the forward voltage drop and reverse blocking voltage concurrently. The proposed 4H-SiC TMBS rectifier reduces the forward voltage drop by 12% compared to the conventional 4H-SiC TMBS rectifier with the tilted sidewall and improves the reverse blocking voltage by 11% with adjusting the length of the upper sidewall. The Silvaco T-CAD was used to analyze the electrical characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.67-68
• /
• 2008

In this study we have developed a packaged silicon carbide power diode with blocking voltage of 2kV. PiN diodes with 7 field limiting rings (FLRs) as an edge termination were fabricated on a 4H-SiC wafer with $30{\mu}m$-thick n-epilayer with donor concentration of $1.6\times10^{15}cm^{-3}$. From packaged PiN diode testing, we obtained reverse blocking voltage of 2kV, forward voltage drop of 4.35V at 100A/$cm^2$, on-resistance of $6.6m{\Omega}cm^2$, and about 8 nanosec reverse recovery time. These properties give a potential for the power system application.

• Korean Journal of Applied Biomechanics
• /
• v.15 no.2
• /
• pp.119-127
• /
• 2005

The purpose of this research helps to make full use for perfect performance by grasping the defects of Ropez motion performed by athlete CSM who was under the training for the 28th 2004 Athene Olympic Garnes, and by presenting complementary methods. For the better Ropez motion which had been performed by CSM for the 1st dispatch selection test and the final for the 28th Athene Olympic Game was analyzed with 3-dimensional cinematographic method. Here are the conclusions: 1. During the board contact phase, powerful kicking and rapid forward flexion motion of upper body make increasing vertical velocity of C. O. G and enlarging body angle. 2. It was indicated that rapid forward flexion motion of upper body during the board contact phase get a large body angle in horse take-off. 3. rapid forward flexion motion of upper body during the board contact phase makes a longer time at horse contacting phase. It showed that this result increased velocity of horse take-off causing by powerful blocking motion. 4. Increasing of air-borne height during pre- flight phase, makes a higher C. O. G; and larger angle of hip, angle of knee and body angle in the landing phase. And it revealed that these results have a stable landing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.3
• /
• pp.147-151
• /
• 2016

Graphene has a monolayer crystal structure formed with C-atoms and has been used as a base layer of HETs (hot electron transistors). Graphene HETs have exhibited the operation at THz frequencies and higher current on/off ratio than that of Graphene FETs. In this article, we report on the preliminary results of current characteristics from the HETs which are fabricated utilizing highly doped Si collector, graphene base, and 5 nm thin $Al_2O_3$ tunnel layers between the base and Ti emitter. We have observed E-B forward currents are inherited to tunneling through $Al_2O_3$ layers, but have not noticed the Schottky barrier blocking effect on B-C forward current at the base/collector interface. At the common-emitter configuration, under a constant $V_{BE}$ between 0~1.2V, $I_C$ has increased linearly with $V_{CE}$ for $V_{CE}$ < $V_{BE}$ indicating the saturation region. As the $V_{CE}$ increases further, a plateau of $I_C$ vs. $V_{CE}$ has appeared slightly at $V_{CE}{\simeq}V_{BE}$, denoting forward-active region. With further increase of $V_{CE}$, $I_C$ has kept increasing probably due to tunneling through thin Schottky barrier between B/C. Thus the current on/off ration has exhibited to be 50. To improve hot electron effects, we propose the usage of low doped Si substrate, insertion of barrier layer between B/C, or substrates with low electron affinity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.10
• /
• pp.912-917
• /
• 2006

In this paper, Trench emitter electrode IGBT structure is proposed and studied numerically using the device simulator, MEDICI. The breakdown voltage, on-state voltage drop, latch up current density and turn-off time of the proposed structure are compared with those of the conventional trench gate IGBT(TIGBT) structures. Enhancement of the breakdown voltage by 19 % is obtained in the proposed structure due to dispersion of electric field at the edge of the bottom trench gate by trench emitter electrode. In addition, the on-state voltage drop and the latch up current density are improved by 25 %, 16 % respectively. However increase of turn-off time in proposed structures are negligible.