• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.8
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• pp.371-375
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• 2001

We attempted to fabricate polyurethane derivatives (PU-CN, PU-DCM) LB films by using LB method. Also, we investigated the monolayer behavior at the air-water interface by surface pressure-area (${\pi}$-A) isotherms. The surface morphologies and the physicochemical properties of LB films were investigated by atomic force microscopy(AFM) and UV-vis spectroscopy, respectively. And, the electrical properties of polyurethane derivatives LB films were investigated by using the conductivity and the dielectric constant. In the surface morphologies, physicochemical and electrical properties of polyurethane derivatives LB films, the properties is different as to the polyurethane derivatives, it is considered that this phenomena could be described by the difference of lumophore pendant which was adhered at PU main chain.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.574-577
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• 2001

GaN thin films on sapphire were grown by rf magnetron sputtering with ZnO buffer layer. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The improved film quality has been obtained by using thin ZnO buffer layer. Using Auger electron spectroscopy(AES), it was observed that the annealing process improved the GaN film quality. The surface roughness according to the annealing temperatures(700, 900, 1100$^{\circ}C$) were investigated by AFM(atomic force microscopy) and it was confirmed that the crystallization was improved by increasing the annealing temperature. Photoluminescence at 8K shows a near-band-edge peak at 3.2eV with no deep level emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.570-573
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• 2001

In this paper, GaN films have been grown on SiO$_2$/Si(100) substrates by RF magnetron sputtering. To obtain high quality GaN films, we used ZnO buffer layer and modified the process conditions. The charateristics of GaN films on RF power, substrate temperature and Ar/N$_2$gas ratio have been investigated by Auger electron spectroscopy and X-ray diffraction analysis. At RF power 150W, substrate temperature 500 $^{\circ}C$ and Ar/N$_2$=1:2 gas ratio, we could grow high quality GaN films. Through the atomic force microscope and photoluminescence analysises, it was observed that the crystallization of GaN films was improved with increasing annealing temperature and the optimal crystallization of GaN films was found at 1100 $^{\circ}C$ annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.58-61
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• 2002

SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.1-5
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• 2000

Diamond films have been achieved on Si(100) substrates using helicon plasma chemical vapor deposition(HPCVD), Gas mixtures with methane and hydrogen have been used. The growth characteristics were investigated by means of X-ray photoelectroton spectroscopy, Atomic force microscopy and X-ray diffraction. We obtained a plasma density as high as 10$\^$10/~10$\^$11/ cm$\^$-3/ by helicon source. The smooth(100) faces of submicron diamond crystallites were found to exhibit pyramidal shaped architecture, The XPS spectrum for the nucleation layer indicates the presence of diamond at 285.4 eV, close to the reported value of 285.5 eV for diamond , XRD results demonstrates the existence of polycrystalline diamond as the diamond (111) and (220) peaks.

• Journal of the Korean Electrochemical Society
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• v.12 no.1
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• pp.1-10
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• 2009

This article reviewed transport behaviours of electroactive species in ionic compounds, focusing on chemical diffusion of Li through the transition metal oxide in a current flowing condition. For this purpose, a distinction has been first briefly made between migration and diffusion with respect to current, driving force and charge of electroactive species considered. Then, the equations for chemical diffusion are derived theoretically in open-circuit and current flowing conditions. Finally, the experimental methods such as ac impedance spectroscopy and current (potential) transient techniques are described in details for characterising chemical diffusion. In addition, the role of the thermodynamic enhancement factor in chemical diffusion is discussed.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.130-131
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• 2000

One of the more promising proposals for guiding and focusing neutral atoms involves dark hollow laser beams. When the frequency of the laser is detuned to the blue of resonance, the dipole force the atoms feel in the light confines them to the dark core where the atoms can be transported with minimal interaction with the light. The ability of the all-light atom guides to transport large number of ultracold atoms for long distances without physical walls leads to the possibility of a versatile tool for atom lithography, atom interferometry, atomic spectroscopy as well as for transporting and manipulating Bose-Einstein condensates. Furthermore since the atoms transported in all-light atom guides do not come into contact with matter, they can in principle be used to transport antimatter as well. The ability to vary the core size of the hollow beam makes the all-light atom guide potentially useful for focusing neutral atoms. The atoms could be focused as tight as the core size of the hollow beam at its waist. This new focusing scheme, called the atom funnel, would not show spherical and chromatic aberrations that conventional harmonic focusing suffers from. (omitted)

• Carbon letters
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• v.14 no.3
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• pp.175-179
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• 2013

Isolated single wall carbon nanotubes (SWCNTs) were synthesized by chemical vapor deposition (CVD) using a liquid precursor (xylene) as a carbon source. Transmission electron microscopy (TEM) and atomic force microscopy confirmed the isolated structure of the SWCNTs. Micro-Raman measurements showed a tangential G-band peak ($1590cm^{-1}$) and radial breathing mode (RBM) peaks ($150-240cm^{-1}$). The tube diameters determined from the RBM frequencies are in good agreement with those obtained from TEM. The chirality of the isolated SWCNTs could be determined based on the energy of the laser and their diameter. A further preliminary study on the nitrogen doping of isolated SWCNTs was carried out by the simple use of acetonitrile dissolved in the precusor.

• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.211-214
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• 2007

Chemical and morphological changes of phenol formaldehyde-based photoresist after $O_2$ radiofrequency(RF) plasma treatment depending on exposure time and source power were investigated. It was found that etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time. Contact angle measurements and X-ray photoelectron spectroscopy(XPS) analysis showed that the surface chemical structure become nearly constant after 15 sec of the treatment. Atomic force microprobe(AFM) measurements were shown that surface roughness was increased with plasma exposure time.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.2 s.245
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• pp.179-186
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• 2006

Dielectrophoresis has received considerable attention for separating nanotubes according to electronic types. Here we examine the effects of surface conductivity of semiconducting single-walled carbon nanotubes (SWNT), induced by ionic surfactants, on the sign of dielectrophoretic force. The crossover frequency of semiconducting SWNT increases rapidly as the conductivity ratio between the particle and medium increases, leading to an incomplete separation of ionic surfactant suspended SWNT at an electric field frequency of 10 MHz. The surface charge of SWNT is neutralized by an equimolar mixture of anionic surfactant sodium dodecyl sulfate (SDS) and cationic surfactant cetyltrimenthylammonium bromide (CTAB), resulting in negative dielectrophoresis of semiconducting species at 10 MHz. A comparative Raman spectroscopy study shows a nearly complete separation of metallic SWNT.