Study of the Effects of ZnO Intermediate Layer on Photoluminescence Properties of Magnetron Sputtering Grown GaN Thin Films

ZnO Intermediate Layer가 GaN 박막의 PL 특성에 미치는 영향 연구

  • 성웅제 (고려대학교 전기공학과 반도체 및 CAD 연구실) ;
  • 이용일 (고려대학교 전기공학과 반도체 및 CAD 연구실) ;
  • 박천일 (고려대학교 전기공학과 반도체 및 CAD 연구실) ;
  • 최우범 (고려대학교 전기공학과 반도체 및 CAD 연구실) ;
  • 성만영 (고려대학교 전기공학과 반도체 및 CAD 연구실)
  • Published : 2001.07.01

Abstract

GaN thin films on sapphire were grown by rf magnetron sputtering with ZnO buffer layer. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The improved film quality has been obtained by using thin ZnO buffer layer. Using Auger electron spectroscopy(AES), it was observed that the annealing process improved the GaN film quality. The surface roughness according to the annealing temperatures(700, 900, 1100$^{\circ}C$) were investigated by AFM(atomic force microscopy) and it was confirmed that the crystallization was improved by increasing the annealing temperature. Photoluminescence at 8K shows a near-band-edge peak at 3.2eV with no deep level emission.

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