• Journal of the Korea Institute of Military Science and Technology
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• v.16 no.6
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• pp.828-832
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• 2013

In this paper, numerical analysis was performed about whether the flash fire of loaded shells breaks out in the virtual combat vehicle according to sorts of the kinetic energy ammunition as the preceding research for vulnerability analysis inside the combat system by an external threaty ammunition. In this simulation, Autodyn program was used and the Lee-Tarver ignition and growth model was used to determine the flash fire outbreak. In this study, the kinetic energy ammunition was set of type A and type B in two kinds and the loaded shells was set of COMPB, TNT, PBX9404 and ANB. As a result, TNT and PBX9404 have much higher flash fire probability than COMPB in high explosive, ANB has very low flash fire probability.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.3
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• pp.312-320
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• 2019

In this paper, we design a 512Kb eFlash IP using 110nm eFlash cells. We proposed eFlash core circuit such as row driver circuit (CG/SL driver circuit), write BL driver circuit (write BL switch circuit and PBL switch select circuit), read BL switch circuit, and read BL S/A circuit which satisfy eFlash cell program, erase and read operation. In addition, instead of using a cross-coupled NMOS transistor as a conventional unit charge pump circuit, we propose a circuit boosting the gate of the 12V NMOS precharging transistor whose body is GND, so that the precharging node of the VPP unit charge pump is normally precharged to the voltage of VIN and thus the pumping current is increased in the VPP (boosted voltage) voltage generator circuit supplying the VPP voltage of 9.5V in the program mode and that of 11.5V in the erase mode. A 12V native NMOS pumping capacitor with a bigger pumping current and a smaller layout area than a PMOS pumping capacitor was used as the pumping capacitor. On the other hand, the layout area of the 512Kb eFlash memory IP designed based on the 110nm eFlash process is $933.22{\mu}m{\times}925{\mu}m(=0.8632mm^2)$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.193-198
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• 2005

NOR type flash 32 ${\times}$ 32 way are fabricated by using the typical 0.35 ${\mu}{\textrm}{m}$ CMOS process. The structure of array is the NOR type with common source line. In this paper, optimized program and erase voltage conditions are presented to realize multi-bit per cell at the CSL-NOR array. These are considered selectivity of selected bit and disturbances of unselected bits. Retention characteristics of locally trapped-charges in the nitride layer are investigated. The lateral diffusion and vertical detrapping to the tunneling oxide of locally trapped charges as a function of retention time are investigated by using the charge pumping method. The results are directly shown by change of the trapped-charges quantities.

• Journal of KIISE:Computing Practices and Letters
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• v.15 no.1
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• pp.1-13
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• 2009

Flash memory is widely used as a storage medium of mobile devices such as MP3 players, cellular phones and digital cameras due to its tiny size, low power consumption and shock resistant characteristics. Currently, there are many studies to replace HDD with flash memory because of its numerous strong points. To use flash memory as a storage medium, FTL(Flash Translation Layer) is required since flash memory has erase-before-write constraints and sizes of read/write unit and erase unit are different from each other. Recently, new type of flash memory called "large block flash memory" is introduced. The large block flash memory has different physical structure and characteristics from previous flash memory. So existing FTLs are not efficiently operated on large block flash memory. In this paper, we propose an efficient FTL for large block flash memory based on FAST(Fully Associative Sector Translation) scheme and page-level mapping on data blocks.

• Journal of the Korea Society of Computer and Information
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• v.16 no.2
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• pp.1-8
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• 2011

NAND type Flash memory has performing much researches for a hard disk substitution due to its low power consumption, cheap prices and a large storage. Especially, the NAND type flash memory is using general buffer systems of a cache memory for improving overall system performance, but this has shown a tendency to emphasize in terms of data. So, our research is to design a high performance instruction NAND type flash memory structure by using a buffer system. The proposed buffer system in a NAND flash memory consists of two parts, i.e., a fully associative temporal buffer for branch instruction and a fully associative spatial buffer for spatial locality. The spatial buffer with a large fetching size turns out to be effective serial instructions, and the temporal buffer with a small fetching size can achieve effective branch instructions. According to the simulation results, we can reduce average miss ratios by around 77% and the average memory access time can achieve a similar performance compared with the 2-way, victim and fully associative buffer with two or four sizes.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.599-603
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• 1988

In this paper, a flash type A/D converter using Variable Threshold Logic circuit is designed and is layonted by double metal CMOS 2 um design rule. Comparator and register string which is the basic elements of a general flash type A/D converter are substituted by simple comparator circuit which is slightly modified from cmos inverter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.676-680
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• 2010

In this paper, Fin-type silicon-oxide-nitride-oxide-silicon (SONOS) flash memory are fabricated and the electrical characteristics are analyzed. Compared to the planar-type SONOS devices, Fin-type SONOS devices show good short channel effect (SCE) immunity due to the enhanced gate controllability. In memory characteristics such as program/erase speed, endurance and data retention, Fin-type SONOS flash memory are also superior to those of conventional planar-type. In addition, Fin-type SONOS device shows improved SCE immunity in accordance with the decrease of Fin width. This is known to be due to the fully depleted mode operation as the Fin width decreases. In Fin-type, however, the memory characteristic improvement is not shown in narrower Fin width. This is thought to be caused by the Fin structure where the electric field of Fin top can interference with the Fin side electric field and be lowered.

• Journal of KIISE:Computer Systems and Theory
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• v.32 no.2
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• pp.75-84
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• 2005

This research is to design a high performance NAND-type flash memory package with a smart buffer cache that enhances the exploitation of spatial and temporal locality. The proposed buffer structure in a NAND flash memory package, called as a smart buffer cache, consists of three parts, i.e., a fully-associative victim buffer with a small block size, a fully-associative spatial buffer with a large block size, and a dynamic fetching unit. This new NAND-type flash memory package can achieve dramatically high performance and low power consumption comparing with any conventional NAND-type flash memory. Our results show that the NAND flash memory package with a smart buffer cache can reduce the miss ratio by around 70% and the average memory access time by around 67%, over the conventional NAND flash memory configuration. Also, the average miss ratio and average memory access time of the package module with smart buffer for a given buffer space (e.g., 3KB) can achieve better performance than package modules with a conventional direct-mapped buffer with eight times(e.g., 32KB) as much space and a fully-associative configuration with twice as much space(e.g., 8KB)

• Journal of KIISE:Computing Practices and Letters
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• v.8 no.1
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• pp.36-45
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• 2002

This paper introduces the design and implementation of a flash memory simulator to emulate a real flash memory. Since this simulator provides exact execution time information and parameter testing functions as well as the type, total capacity, block size, and page size of flash memory, it can be used as a real flash memory as viewed by the operating system. Furthermore, the simulator provides time logging functions of the internal routines of the flash memory management software allowing the monitoring of bottlenecks within the software. Finally, we show the performance measurements of applications under the Linux operating systems on both the simulator and a test board verifying the simulator's use as a replacement for real flash memory.

• Journal of KIISE:Computer Systems and Theory
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• v.32 no.11_12
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• pp.587-597
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• 2005

Flash memory based embedded computing systems are becoming increasingly prevalent.These systems typically have to provide an instant start-up time. However, we observe that mounting a file system toy flash memory takes 1 to 25 seconds mainly depending on the flash capacity. Since the flash chip capacity is doubled in every year, this mounting time will soon become the most dominant reason of the delay of system start-up time Therefore, in this paper, we present instant mounting techniques for flash file systems by storing the In-memory file system metadata to flash memory when unmounting the file system and reloading the stored metadata quickly when mounting the file system. These metadata snapshot techniques are specifically developed for NOR- and NAND-type flash memories, while at the same time, overcoming their physical constraints. The proposed techniques check the validity of the stored snapshot and use the proposed fast trash recovery techniques when the snapshot is Invalid. Based on the experimental results, the proposed techniques can reduce the flash mounting time by about two orders of magnitude over the existing de facto standard flash file system, JFFS2.