• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1017-1021
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• 2007

To implement tera bit level non-volatile memories of low power and fast operation, proving statistical reproductivity and satisfying reliabilities at the nano-scale are a key challenge. We fabricate the charge trapping nano scaled SONOS unit memories and 64 bit flash arrays and evaluate reliability and performance of them. In case of the dielectric stack thickness of 4.5 /9.3 /6.5 nm with the channel width and length of 34 nm and 31nm respectively, the device has about 3.5 V threshold voltage shift with write voltage of $10\;{\mu}s$, 15 V and erase voltage of 10 ms, -15 V. And retention and endurance characteristics are above 10 years and $10^5$ cycle, respectively. The device with LDD(Lightly Doped Drain) process shows reduction of short channel effect and GIDL(Gate Induced Drain Leakage) current. Moreover we investigate three different types of flash memory arrays.

• Journal of Applied Reliability
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• v.10 no.1
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• pp.65-71
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• 2010

NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.269-275
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• 2003

Polysilicon-oxide-nitride-oxide-silicon(SONOS) transistors were fabricated by using 0.35${\mu}{\textrm}{m}$ complementary metal-oxide-semiconductor(CMOS) process technology to realize a low voltage programmable flash memory. The thickness of the tunnel oxide, the nitride, and the blocking oxide were 2.4nm, 4.0nm, and 2.5nm, respectively, and the cell area of the SONOS memory was 1.32$\mu$$m^2$. The SONOS device revealed a maximum memory window of 1.76V with a switching time of 50ms at 10V programming, as a result of the scaling effect of the nitride. In spite of scaling of nitride thickness, memory window of 0.5V was maintained at the end of 10 years, and the endurance level was at least 105 program/erase cycles. Over-erase, which was shown seriously in floating gate device, was not shown in SONOS device.

• Journal of KIISE:Computing Practices and Letters
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• v.13 no.7
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• pp.508-519
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• 2007

Flash memory based storage has been used in various mobile systems and now is to be used in Laptop computers in the name of Solid State Disk. The Flash memory has not only merits in terms of weight, shock resistance, and power consumption but also limitations like erase-before-write property. To overcome these limitations, Flash memory based storage requires special address mapping software called FTL(Flash-memory Translation Layer), which often performs merge operation for block recycling. In order to reduce block recycling cost in NAND Flash memory based storage, we introduce another block recycling scheme which we call migration. As a result, the FTL can select either merge or migration depending on their costs for each block recycling. Experimental results with Postmark benchmark and embedded system workload show that this cost-based selection of migration/merge operation improves the performance of Flash memory based storage. Also, we present a solution of macroscopic optimal migration/merge sequence that minimizes a block recycling cost for each migration/merge combination period. Experimental results show that the performance of Flash memory based storage can be more improved by the macroscopic optimization than the simple cost-based selection.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.44 no.4 s.316
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• pp.27-34
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• 2007

In this paper device driver for camera capture in hand held mobile system is implemented based on microsoft windows CE operating system. We also study the storage device driver based on the FAT fie system by using NAND flash memory as a storage device. We use the MBA2440 PDA board for implementing the hardware for image capture by using CMOS camera module producted by PixelPlus company. This camera module has VGA $640{\times}480$ pixel resolution. We also make application program which can be cooperated with the device driver for testing its performance, for example image capture speed and quality of captured image. We check that the application can be cooperated well not only with the device driver for camera capture but also with the device driver for FAT file system designed especially for the NAND flash memory.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.1
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• pp.77-82
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• 2014

SD memory cards are widely used in portable digital devices, and most of them exploit NAND flash memory as their storage, so that they have a feature of storing users' important data safely with low costs. In case of using NAND flash memory as storage, however, there is no method to store users' data if memory capacity is insufficient when transferring a large volume of data. This paper proposes a virtual SD memory card system. It used a SD memory card device driver to process data requested from a host by exploiting external storage rather than by exploiting flash memory as a memory core for storing data to the SD memory card. For experiment, it used the FPGA-based SD card slave controller IP on the SMC controller with a S3C2450 ARM CPU to test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.676-680
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• 2010

In this paper, Fin-type silicon-oxide-nitride-oxide-silicon (SONOS) flash memory are fabricated and the electrical characteristics are analyzed. Compared to the planar-type SONOS devices, Fin-type SONOS devices show good short channel effect (SCE) immunity due to the enhanced gate controllability. In memory characteristics such as program/erase speed, endurance and data retention, Fin-type SONOS flash memory are also superior to those of conventional planar-type. In addition, Fin-type SONOS device shows improved SCE immunity in accordance with the decrease of Fin width. This is known to be due to the fully depleted mode operation as the Fin width decreases. In Fin-type, however, the memory characteristic improvement is not shown in narrower Fin width. This is thought to be caused by the Fin structure where the electric field of Fin top can interference with the Fin side electric field and be lowered.

• The Journal of Society for e-Business Studies
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• v.15 no.4
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• pp.101-121
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• 2010

This paper presents an intelligent prefetching technique that significantly improves performance of hybrid fash-disk storage, a combination of flash memory and hard disk. Since flash memory embedded in a hybrid device is much faster than hard disk in terms of I/O operations, it can be utilized as a 'cache' space to improve system performance. The basic strategy for prefetching is to utilize sequential pattern mining, with which we can extract the access patterns of objects from historical access sequences. We use two techniques for enhancing the performance of hybrid storage with prefetching. One of them is to modify a FAST algorithm for mapping the flash memory. The other is to extend the unit of prefetching to a block level as well as a file level for effectively utilizing flash memory space. For evaluating the proposed technique, we perform the experiments using the synthetic data and real UCC data, and prove the usability of our technique.

• Journal of KIISE:Computing Practices and Letters
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• v.15 no.2
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• pp.77-88
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• 2009

According to the size of NAND flash memory as the storage system of mobile device becomes large, the performance of address translation and life cycle management in FTL (Flash Translation Layer) to interact with file system becomes very important. In this paper, we propose the continuity counters, which represent the number of continuous physical blocks whose logical addresses are consecutive, to reduce the number of address translation. Furthermore we propose the prefetching method which preloads frequently accessed pages into main memory to enhance I/O performance of flash memory. Besides, we use the 2-bit write prediction and asynchronous writing method to predict addresses repeatedly referenced from host and prevent from writing overhead. The experiments show that the proposed method improves the I/O performance and extends the life cycle of flash memory. As a result, proposed CFTL (Clustered Flash Translation Layer)'s performance of address translation is faster 20% than conventional FTLs. Furthermore, CFTL is reduced about 50% writing time than that of conventional FTLs.

• International Journal of Internet, Broadcasting and Communication
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• v.13 no.2
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• pp.27-35
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• 2021

NAND flash memory-based SSD needs an internal software, Flash Translation Layer(FTL) to provide traditional block device interface to the host because of its physical constraints, such as erase-before-write and large erase block. However, because useful host-side information cannot be delivered to FTL through the narrow block device interface, SSDs suffer from a variety of problems such as increasing garbage collection overhead, large tail-latency, and unpredictable I/O latency. Otherwise, the new type of SSD, open-channel SSD exposes the internal structure of SSD to the host so that underlying NAND flash memory can be managed directly by the host-level FTL. Especially, I/O data classification by using host-side information can achieve the reduction of garbage collection overhead. In this paper, we propose a new scheme to reduce garbage collection overhead of open-channel SSD by separating the journal from other file data for the journaling filesystem. Because journal has different lifespan with other file data, the Write Amplification Factor (WAF) caused by garbage collection can be reduced. The proposed scheme is implemented by modifying the host-level FTL of Linux and evaluated with both Fio and Filebench. According to the experiment results, the proposed scheme improves I/O performance by 46%~50% while reducing the WAF of open-channel SSDs by more than 33% compared to the previous one.