• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.35-38
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• 2002

In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride， and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.250-253
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• 2013

In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.8
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• pp.59-63
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• 2015

This paper discusses the capacitance-voltage method in Metal-Oxide-Nitride-Oxide-Silicon (MONOS) devices to analyzed the characteristics of the top oxide/nitride, nitride/bottom oxide interface trap distribution. In the CV method, nitride trap density can be calculated based on the program characteristics of the nitride thickness variations. By applying this method, silicon rich nitride device found to have a larger trap density than stoichiometric nitride device. This result is consistent with previous studies. If this comparison analysis can be expected to result in improved reliability of the SONOS flash memory.

• Journal of Internet of Things and Convergence
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• v.8 no.5
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• pp.33-39
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• 2022

A storage device used in the mobile computing field should have low power, light weight, durability, etc., and should be able to effectively store and manage large-capacity data generated by users. NAND flash memory is mainly used as a storage device in the field of mobile computing. Due to the structural characteristics of NAND flash memory, it is impossible to overwrite in place when a data update request is made, so it can be solved by accurately separating requests that frequently request data update and requests that do not, and storing and managing them in each block. The classification method for such a data update request is called a hot data identification method, and various studies have been conducted at present. This paper continuously records the occurrence of data update requests using a counting filter for more accurate hot data validation, and also verifies hot data by considering how often the requested update requests occur during a specific time.

• The KIPS Transactions:PartD
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• v.15D no.6
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• pp.755-766
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• 2008

Recently, NAND flash memory is becoming into the spotlight as a next-generation storage device because of its small size, fast speed, low power consumption, and etc. compared to the hard disk. However, due to the distinct characteristics such as erase-before-write architecture, asymmetric operation speed and unit, disk-based systems and applications may result in severe performance degradation when directly implementing them on NAND flash memory. Especially when a B-tree is implemented on NAND flash memory, intensive overwrite operations may be caused by record inserting, deleting, and reorganizing. These may result in severe performance degradation. Although ${\mu}$-tree has been proposed in order to overcome this problem, it suffers from frequent node split and rapid increment of its height. In this paper, we propose Log-Structured B-Tree(LSB-Tree) where the corresponding log node to a leaf node is allocated for update operation and then the modified data in the log node is stored at only one write operation. LSB-tree reduces additional write operations by deferring the change of parent nodes. Also, it reduces the write operation by switching a log node to a new leaf node when inserting the data sequentially by the key order. Finally, we show that LSB-tree yields a better performance on NAND flash memory by comparing it to ${\mu}$-tree through various experiments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.601-604
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• 2006

In this paper, we propose the single poly-Si Flash EEPROM device with a new structure which does not need the high voltage switching circuits. The device was designed, fabricated and characterized. From the measurement results, it was found that the program, the erase and the read operations worked properly. The threshold voltage was 3.1 V after the program in which the control gate and the drain were biased with 12 V and 7 V for $100{\mu}S$, respectively. And it was 0.4 V after the erase in which the control gate was grounded and the drain were biased with 11 V for $200{\mu}S$. On the other hand, it was found that the program and the erase speeds were significantly dependent on the capacitive coupling ratio between the control gate and the floating gate. The larger the capacitive coupling ratio, the higher the speeds, but the target the area per cell. The optimum structure of the cell should be chosen with the consideration of the trade-offs.

• Convergence Security Journal
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• v.7 no.4
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• pp.15-21
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• 2007

As the amount of flash memory being used in embedded device is increased and embedded devices become more important in many computing environments, embedded file system security becomes more important issue. Moreover embedded devices can be easily stolen or lost because of it's high portability. If the lost embedded device has very important information, there's no means to protect it except data encryption. For improving embedded devices' security this paper propose design and implementation of flash cryptographic file system. For this purpose YAFFS is used. By the modified YAFFS cryptographic file system, the security of embedded devices can be improved.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.250-250
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• 2010

The random telegraph signal (RTS) for the NOR flash cell scaling is investigated. An innovative method to suppress the RTS, based on the device engineering, is proposed. By optimizing the channel doping profile and using the high-k tunnel dielectric, it is confirmed from three-dimensional (3-D) simulation, that the $V_{th}$ amplitude, dueto RTS, is significantly suppressed, from approximately 0.5 to 0.07 V in the middle of the channel at 45 nm NOR Flash technology. From this result, it is expected that the proposed method to suppress the RTS amplitude is essential for further cell size scaling in Flash memory.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.507-508
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• 2008

• Journal of KIISE:Computer Systems and Theory
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• v.35 no.1
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• pp.18-29
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• 2008

NAND Flash memory has been growing popular storage device for the last years because of its low power consumption, fast access speed, shock resistance and light weight properties. However, it has the distinct characteristics such as erase-before-write architecture, asymmetric read/write/erase speed, and the limitation on the number of erasure per block. Due to these limitations, various Flash Translation Layers (FTLs) have been proposed to effectively use NAND flash memory. The systems that adopted the conventional FTL may result in severe performance degradation by the hot data which are frequently requested data for overwrite in the same logical address. In this paper, we propose a novel FTL algorithm called Adaptive Flash Translation Layer (AFTL) which uses sector mapping method for hot data and log-based block mapping method for cold data. Our system removes the redundant write operations and the erase operations by the separating hot data from cold data. Moreover, the read performance is enhanced according to sector translation that tends to use a few read operations. A series of experiments was organized to inspect the performance of the proposed method, and they show very impressive results.