• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.306-306
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• 2010

A high density (> $10^{11}\;cm^{-3}$) and low electron temperature (< 2 eV) plasma is produced by using a conventional HF (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) with an additional ultra high frequency (UHF, 314 MHz) plasma source utilizing two parallel antenna assembly. It is applied for the high rate synthesis of high quality nanocrystalline silicon (nc-Si) films. A high deposition rate of 1.8 nm/s is achieved with a high crystallinity (< 70%), a low spin density (< $3{\times}10^{16}\;cm^{-3}$) and a high light soaking stability (< 1.5). Optical emission spectroscopy measurements reveal emission intensity of $Si^*$ and $SiH^*$, intensity ratio of $H{\alpha}/Si^*$ and $H{\alpha}/SiH^*$ which are closely related to film deposition rate and film crystallinity, respectively. A high flux of precursor and atomic hydrogen which are produced by an additional high excitation frequency is effective for the fast deposition of highly crystallized nc-Si films without additional defects.

• 한국표면공학회지
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• 제53권3호
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• pp.109-115
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• 2020

In this study, polycrystalline diamond was synthesized by chemical vapor deposition (CVD). Diamond films were deposited on a-plane sapphire substrates while changing the concentration of methane for hydrogen (CH₄/H₂), and the concentrations of methane were 0.25, 0.5, 1, 2, 3 and 4 vol%, respectively. Crystallinity and nucleation density according to changes in methane concentration were investigated. At this time, the discharge power, vacuum pressure, and deposition time were kept constant. In order to deposit polycrystalline diamond, the sapphire substrate was etched with sulfuric acid and hydrogen peroxide (ratio 3:7), and the sapphire surface was polished for 30 minutes with 100 nm-sized nanodiamond particles. The deposited diamond thin film was analyzed by a scanning electron microscope (SEM), a Raman spectra, Atomic force microscope (AFM) and an X-ray diffractometer (XRD). By controlling the ratio of methane to hydrogen and performing appropriate pre-treatment conditions, a polycrystalline diamond thin film having excellent crystallinity and nucleation density was obtained.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1772-1775
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• 2000

We have fabricated poly-Si TFTs by two-step crystallizaton. Poly-Si films have been prepared by furnace annealing(FA) and rapid thermal annealing(RTA) followed by subsequent the post-annealing, excimer laser annealing. The measured crystallinity of RTA and FA annealed poly-Si film is 77% and 68.5%, respectively. For two-step annealed poly-Si film, the crystallinity has been drastically to 87.7% and 86.3%. The RMS surface roughness from AFM results have been improved from 56.3${\AA}$ to 33.5${\AA}$ after post annealing. The measured transfer characteristics of the two-step annealed poly-Si TFTs have been improved significantly for the both FA-ELA and RTA-ELA. Leakage currents of two-step annealed poly-Si TFTs are lower than that of the devices by FA and RTA. From these results, we can describe the fact that the intra-grain defects has been cured drastically by the post-annealing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$ increases in Cl$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystalliility of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$ only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• 한국전기전자재료학회논문지
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• 제35권2호
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• pp.190-193
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• 2022

In this work, the effect of sputtering working pressure for the tellurium film and its thin-film transistor was investigated. The transfer characteristics of tellurium thin-film transistors were improved by increasing the working pressure during sputtering process. As increasing working pressure, physical and optical properties of Te films such as crystallinity, transmittance, and surface roughness were improved. Therefore, the improved transfer characteristics of Te thin-film transistors may originate from both improved interface properties between the silicon oxide gate dielectric layer and the tellurium active layer with an improved quality of Te film. In conclusion, the control of working pressure during sputtering would be important for obtaining high-performance tellurium-based thin film transistor

• 한국세라믹학회지
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• 제27권4호
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• pp.513-520
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• 1990

Diamond film was deposited on Si wafer substrate from a gas mixture of methane, hydrogen and oxygen by microwave plasma-assisted chemical vapor deposition. The effects of the pre-treatments of the substrate and of the oxygen addition on the diamond film synthesis are described. In order to obtain diamond film, the substrate was pre-treated with 3 kinds of methods. When the substrate was ultrasonically vibrated within the ethyl alcohol dispersed with 25${\mu}{\textrm}{m}$ diamond powder, the denset diamond film was deposited. Addition of oxygen in the gas mixture of methane and hydrogen improved the crystallinity of the deposited diamond film and also increased the deposition rate of the diamond film more than two times.

• 한국진공학회지
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• 제8권2호
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• pp.136-140
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• 1999

The stability and response time of $WO_3$ thin films for EC device are critical problems being solved. Those are affected by the species of electrolyte, preparation conditions and fabricating methods of specimen. In this paper, we compared the stabilities of three kinds of tungsten oxide film in electrolyte. Each of three films was prepared by different manufacturing conditions, that is, one is a thermal oxidation film of tungsten metal deposited on pure glass substrate, another is a $WO_3$ film made on ITO glass directly, the other is a thermally oxidized film on tungsten plate. It was observed that thermally oxidized $WO_3$ films has a remarkable stability (the lifetime was above $10^6$ cycle). From these results, we found that the stability was closely related to the stoichiometric bonding between tungsten and oxygen atoms in addition to crystallinity and density of film.

• 한국진공학회지
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• 제13권1호
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• pp.9-13
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• 2004

본 연구에서는 P 형과 N 형의 특성을 모두 갖추 것으로 알려진 perylene의 특성을 연구하였다. 특히 구조적 특성과 전기적 특성 향상을 위하여 초고진공 상태에서 $SiO_2$ 기판 위에 perylene 박막을 제작하였는데 증착 속도에 따른 박막의 특성 향상 여부를 살펴보기 위하여 0.1 $\AA$/s 와 1 $\AA$/s로 변화시켜가며 박막을 제작하였다. 박막의 결정성과 표면 특성은 X-선 회절과 원자 간력 현미경을 이용하여 살펴보았는데, 1 $\AA$/s로 증착된 perylene박막이 더 우수한 결정성과 표면 분포를 보였다. 박막의 전기적 특성 확인을 위하여 heavily doped 실리콘 기판 위에 $SiO_2$와 gold를 이용한 perylene 박막 트랜지스터를 제작하였다. 얻어진 perylene 박막 트랜지스터는 P 형의 반도체적 성질을 나타내었으며, 전류-전압 특성 곡선을 이용하여 $2.23\times10^{-5}\textrm{cm}^2$/Vs 의 전하 이동도를 얻었다.

• 한국재료학회지
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• 제11권7호
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• pp.537-544
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• 2001

$TiO_2$광촉매릉 반응성 스퍼터링법을 이웅하여 박막으로 제조하고 유기물 및 살균실험을 통하여 미세조직이 광촉매 효율에 미치는 영향을 조사하고자 하였다. 광촉매 효율측정을 위하여 페놀분해실험 및 E.coli 078을 이용한 살균실험을 행하였다. $TiO_2$박막에 의한 페놀분해실험 시, 전자수용체인 산소의 공급에 의하여 분해효율이 2배까지 증가하였다. E.coli 078분해실험의 경우, 광촉매 $TiO_2$박막을 사웅하여 살균하였을때 UV만 조사하여 살균하였을 경우 보다 분해효율이 최고 70% 이상 증가하였다. 페놀분해실험과 E.coli 078 살균실험 결과 저결정성 박막의 경우 분해능이 매우 미약하였으며, 표면조도가 높고 결정성이 우수한 박막의 경우에 높은 광촉매 효율을 나타내어$TiO_2$박막의 광촉매 효과는 표면형상과 결정성이 매우 중요한 인자로 작용하였다.

• 한국진공학회지
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• 제2권4호
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• pp.439-454
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• 1993

The phase sequence of codeposited Co-Si alloy and Co/si multilayer thin film was investigated by differential scanning calormetry(DSC) and X-ray diffraction (XRD) analysis, The phase sequence in codeposition and codeposited amorphous Co-Si alloy thin film were CoSilongrightarrow Co2Si and those in Co/Si multilayer thin film were CoSilongrightarrowCo2Silongrightarrow and CoSilongrightarrowCo2Si longrightarrowCoSilongrightarrowCoSi2 with the atomic concentration ration of Co to Si layer being 2:1 and 1:2 respectively. The observed phase sequence was analyzed by the effectvie heat of formatin . The phase determining factor (PDF) considering structural facotr in addition to the effectvie heat of formation was used to explain the difference in the first crystalline phase between codeposition, codeposited amorphous Co-Si alloy thin film and Co/Si multilayer thin film. The crystallinity of Co-silicide deposited by multitarget bias cosputter deposition (MBCD) wasinvestigated as a funcion of deposition temperature and substrate bias voltage by transmission electron microscopy (TEM) and epitaxial CoSi2 layer was grown at $200^{\circ}C$ . Parameters, Ear, $\alpha$(As), were calculate dto quantitatively explain the low temperature epitaxial grpwth of CoSi2 layer. The phase sequence and crystallinity had a stronger dependence on the substrate bias voltage than on the deposition temperature due to the collisional daxcade mixing, in-situ cleannin g, and increase in the number of nucleation sites by ion bombardment of growing surface.