• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1556-1559
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• 2005

Indium-tin oxide (ITO) films were deposited by a low-frequency (LF, 100 Hz) magnetron sputtering on glass substrates at the room temperature. The effects of the film thickness on the structural, electrical and optical properties of ITO films were investigated. With the film thickness the films reveal better crystallinity, showing both (222) and (400) pla nes in the XRD pattern. The optical transmittance and the sheet resistance of the films decreased with the increasing thickness. In addition, the electrical properties of ITO films were improved after annealing in a vacuum.

• Journal of the Korean Ceramic Society
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• v.30 no.2
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• pp.148-156
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• 1993

TiN films were deposited onto high speed steel (SKH9) by plasma assisted chemical vapor deposition (PACVD) using a TiCl4/N2/H2/Ar gas mixture at around 50$0^{\circ}C$. The effects of the deposition temperature, R.F. power and TiCl4 concentration on the deposition of TiN and the microhardness of TiN film were investigated. The crystallinity and the microhardness of TiN films were improved with increase of the deposition temperature. Optimum deposition temperature in this study was 50$0^{\circ}C$, because a softening or phase transformation of the substrate occurred over 50$0^{\circ}C$. A large increase of the film growth rate with a strong(200) preferred orientation was obtained by increasing R.F. power. Much chlorine content of about 10at.% was found in the deposited films and resulted in relatively low average microhardness of about 1, 500Kgf/$\textrm{mm}^2$ compared with the theoretical value(~2, 000Kgf/$\textrm{mm}^2$).

• Carbon letters
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• v.1 no.3_4
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• pp.129-132
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• 2001

Carbonaceous thin films were prepared from acetylene and argon gases by plasma assisted chemical vapor deposition (Plasma CVD) at 873 K. The carbonaceous thin films were characterized by mainly Raman spectroscopy, and their electrochemical properties were studied by cyclic voltammetry and charge-discharge measurements in propylene carbonate (PC) solution. Raman spectra showed that crystallinity of carbonaceous thin films is correlated by the applied RF power. The difference of the applied RF power also affected on the results of cyclic voltammetry and charge-discharge measurements. In PC solution, intercalation and de-intercalation of lithium ion can occur as well as in the mixed solution of EC and DEC.

• Korean Journal of Materials Research
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• v.27 no.5
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• pp.242-247
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• 2017

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.

• Journal of the Korean institute of surface engineering
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• v.35 no.5
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• pp.289-294
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• 2002

ZnTe films have been grown on (100) GaAs substrate with two representative problems. The one is lattice mismatch, the other is thermal expansion coefficients mismatch of ZnTe /GaAs. It claims here, the relationship of film thickness and defects distribution with (100) ZnTe/GaAs using hot wall epitaxy (HWE) growth was investigated by transmission electron microscopy (TEM). It analyzed on the two-sort side using TEM with cross-sectional transmission electron microscopy (XTEM) and high-resolution electron microscopy (HREM). Investigation into the nature and behavior of dislocations with dependence-thickness in (100) ZnTe/ (100) GaAs hetero-structures grown by transmission electron microscopy (TEM). This defects range from interface to 0.7 $\mu\textrm{m}$ was high density, due to the large lattice mismatch and thermal expansion coefficients. The defects of low density was range 0.7$\mu\textrm{m}$~1.8$\mu\textrm{m}$. In the thicker range than 1.8$\mu\textrm{m}$ was measured hardly defects.

• Journal of the Korean institute of surface engineering
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• v.47 no.1
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• pp.20-24
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• 2014

Joule heat is generated by applying an electric filed to a conductive layer located beneath or above the amorphous silicon film, and is used to raise the temperature of the silicon film to crystallization temperature. An electric field was applied to an indium tin oxide (ITO) conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced within the range of a millisecond. To investigate the kinetics of Joule-heating induced crystallization (JIC) solid phase crystallization was conducted using amorphous silicon films deposited by plasma enhanced chemical vapor deposition and using tube furnace in nitrogen ambient. Microscopic and macroscopic uniformity of crystallinity of JIC poly-Si was measured to have better uniformity compared to that of poly-Si produced by other methods such as metal induced crystallization and Excimer laser crystallization.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.50-50
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• 2011

The aluminum nitride films were prepared by RF magnetron sputtering using an AlN ceramic target. The crystallinity, grain size, Al-N bonding and thermal conductivity were investigated in dependence on the plasma power densities (4.93, 7.40, 9.87 W/$cm^2$) during sputtering. High thermal conductivity is important properties of A1N passivation layer for functioning properly in thermal inkjet printhead. The crytallinity, grain size, Al-N bonding formation and chemical composition were observed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS), respectively. The AlN thin film was changed from amorphous to crystalline as the power density was increased, and the largest grain size appeared at medium power density. The near stoichiometry Al-N bonding ratio was acquired at medium power density. So, we know that the AlN thin film had better thermal conductivity with crystalline phase and near stoichometry Al-N bonding ratio at 7.40 W/$cm^2$ power density.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.304-307
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• 2002

A zinc oxide (ZnO) single crystal was used as a substrate in the hydride vapor-phase epitaxy (HVPE) growth of GaN and the structural and optical properties of GaN layer were characterized by x- ray diffraction, transmission electron microscopy, secondary ion mass spectrometry, and photoluminescence (PL) analysis. Despite a good lattice match and an identical structure, ZnO is not an appropriate substrate for application of HVPE growth of GaN. Thick film could not be grown. The substrate reacted with process gases and Ga, being unstable at high temperatures. The crystallinity of ZnO substrate deteriorated seriously with growth time, and a thin alloy layer formed at the growth interface due to the reaction between ZnO and GaN. The PL from a GaN layer demonstrated the impurity contamination during growth possibly due to the out-diffusion from the substrate.

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.550-558
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• 1989

Polycrystalline diamond films have been deposited on Si wafer Ly hot W filament CVD method using CH4H2 mixtures. The effects of surface pretreatment, W filament temperature, CH4 volume fraction, and addition of water vapor on the growth rate and morphology of the films were investigated. Surface pretretment was essential for depositing a continuous diamond film. Raising the filament temperature resulted in an increased growth rate and a better crystal quality of the film. As the methane content is varied from 0.5% to 5%, well-faceted crystals gradually transformed into spherical particles of non-diamond phase with a simultaneous increase in the growth rate. Addition of water vapor markedly improved the crystallinity to produce crystalline particles even with 5% methane mixture.

• Korean Journal of Materials Research
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• v.16 no.7
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• pp.401-407
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• 2006

ZnO is well-known as a promising material for optical communication systems and electronic displays. ZnO:Er thin films were deposited on c-plane sapphire substrates by rf magnetron sputtering, and the effects of sputtering parameters and the annealing conditions on the luminescence in the visible range were investigated. Luminescent properties depended on the crystallinity of films and annealing atmosphere. Highly c-axis oriented ZnO:Er films showed a strong emission band at 465 nm and a weak emission at 525 nm due to the energy transition of $^{4}I_{15/2}-^{4}F_{5/2}\;and\;^{4}I_{15/2}-^{2}H_{11/2}$, respectively. ZnO:Er thin films annealed at air atmosphere were superior to those annealed in $H_2$ in photoluminescence intensity.