• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.705-710
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• 1998

Intrinsic gettering is usually to improve wafer quality, which is an important factor for reliable ULSI devices. In order to generate oxygen precipitation in lightly and heavily boron doped silicon wafers with or without high $^75 As^+$ ion implantation, the 2-step annealing method was adopted. After annealing, the were cleaved and etched with th Wright etchant. The morphology of cross section on samples was inspected by FESEM(field emission scanning electron microscopy). The morphology of unimplanted samples was rater rough than that of the implanted. Oxygen precipitation density observed by an optical microscope in lightly boron doped samples was about 3$\times10^6/cm^3$. However, in heavily boron doped samples, the density of oxygen precipitation was largest at $600^{\circ}C$ in 1st annealing, and decreased abruptly until $800^{\circ}C$, But it increased slightly at $1000^{\circ}C$ and was independent with the implantation.

• Journal of Magnetics
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• v.22 no.1
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• pp.7-13
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• 2017

The magnetoresistance (MR) properties of antiferromagnetic (AFM) IrMn based giant magnetoresistance-spin valve (GMR-SV) was investigated in view point of the artificial rotation effect of ferromagnetic (FM) layer in the plane induced by an applied field during the post annealing temperature. The MR curves measured with an azimuthal angle region of ${\phi}=0^{\circ}-360^{\circ}$ are depended on the annealing temperature and the magnetization easy axis of two free NiFe layers and two pinned NiFe layers in dual-type GMR-SV film. Especially, the annealing temperature and sample rotation angle(${\theta}$ ) maintained to the magnetic sensitivity (MS) of 1.4 %/Oe with an isotropic region angle of $110^{\circ}$ are $100^{\circ}C$ and $90^{\circ}$, respectively.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.369-375
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• 1994

In this study, ferroelectric thin films of PZT with different Zr/Ti ratio were prepared by sol-get processing and annealed by rapid thermal annealing at >$500^{\circ}C$>$-700^{\circ}C$ for 10 sec. -1 min. Structures of the annealed films were examined by X-ray diffraction and SEM. Thin films of PZT with perovskite structure have been obtained by annealing at >$600^{\circ}C$ or above and for 20 seconds or longer. Maximum remnant polarization of 10.24.mu.C/cm$^{2}$ and minimum coercive field of 20.06 kV/cm were obtained from the 56/44 and 65/35 Zr/Ti composition films, respectively. Dielectric constant, .epsilon.$_{r}$ of 500-1300 and dielectric loss, tan .delta., of 0.01-0.035 were obtained from the films.s.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1829-1831
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• 2005

Ferroelectric $Bi_{3.25}Nd_{0.75}Ti_3O_{12}$(BNdT) thin films were proposed for capacitor of FeRAM. The BNdT thin films were grown on Pt/Ti $SiO_2/P-Si(100)$ substrates by the RF magnetron sputtering deposition. The dielectric properties of the BNdT were investigated by varying post-annealing temperatures. Increasing post-annealing temperature, the (117) peak was increased. An increase of rod type grains of BNdT films with increasing post-annealing temperature was observed by the Field Emission Scanning Electron Microscopy(FE-SEM). The dielectric constant and dielectric loss of the BNdT thin films with post-annealing temperature of $700^{\circ}C$ were 418 and 0.37, respectively.

• Journal of the Korean Vacuum Society
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• v.14 no.1
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• pp.24-28
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• 2005

A typical method for obtaining poly-Si films is the solid phase crystallization(SPC) of amorphous Si. Advantages of SPC are uniformity, process quality and low cost of production. However, high process temperature and long process time prevent the employment of SPC process on thermally susceptible glass substrate. In this parer, we propose a new method that applies an alternating magnetic field during crystallization annealing in an alternating magnetic field crystallization(AMFC) system for lowering process temperature and shorter process time of SPC. When we crystallized, in the case of SPC, annealing time is 24 hours at 570℃. But in the case of AMFC, annealing time is only 20 minutes at the same temperature.

• Progress in Superconductivity and Cryogenics
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• v.21 no.3
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• pp.13-17
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• 2019

We investigate the effect of thermal annealing on $MgB_2$ thin films with thicknesses of 400 and 800 nm, irradiated by 350 keV C-ions with a dose of $1{\times}10^{15}atoms/cm^2$. Irradiation by low-energy C-ions produces atomic lattice displacement in $MgB_2$ thin films, improving magnetic field performance of critical current density ($J_c$) while reducing the superconducting transition temperature ($T_c$). Interestingly, the lattice displacement and the $T_c$ are gradually restored to the original values with increasing thermal annealing temperature. In addition, the magnetic field dependence of $J_c$ also returns to that of the pristine state together with the restoration of $T_c$. Because $J_c$(H) is sensitive to the type and density of the disorder, i.e. vortex pinning, the recovery of $J_c$(H) in irradiated $MgB_2$ thin films by thermal annealing indicates that low-energy C-ion irradiation on $MgB_2$ thin films primarily causes lattice displacement. These results provide new insights into the application of low-energy irradiation in strategically engineering critical properties of superconductors.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.1
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• pp.206-211
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• 2006

The quantification analysis problem is that how the m entities that have n characteristics can be linked to p-dimension space to reflect the similarity of each entity In this paper, the optimization approach for the quantification analysis problem using neural networks is suggested, and the performance is analyzed The computation of average variation volume by mean field theory that is analytical approximated mobility of a molecule system and the annealed mean field neural network approach are applied in this paper for solving the quantification analysis problem. As a result, the suggested approach by a mean field annealing neural network can obtain more optimal solution than the eigen value analysis approach in processing costs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.362-362
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• 2009

$MgB_2$ bulk samples were sintered at different ambient. In this work, high purity Ar gas was added with oxygen and hydrogen gas, which can be regarded as impurity in a sense, as a possible dopant in the $MgB_2$. It was found that oxygen in the sintering ambient leads to a decrease in the critical current density $J_c$ at self field and lower fields. However, we can obtained higher $J_c$ at higher fields. It was also noted that $MgB_2$ samples sintered with 5% hydrogen in Ar revealed the increased $J_c$ at all fields compared to those processed in pure Ar ambient. From the XRD and FESEM analysis, the impurity gas in Ar can refine the $MgB_2$ grain size and result in increased grain. boundary, which can act as a strong flux pinning sites in $MgB_2$ samples. Also discussed are the effects of sintering ambient on irreversibility field, $H_{irr}$ and the upper critical field, $H_{C2}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1032-1038
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• 2000

Ni$_{81}$$Fe_{19}$(200 nm) thin films have been deposited by RF-magnetron sputtering on Si(001) substrates, Atomic force microscopy(AFM), X-ray diffraction(XRD) and magnetoresistance(MR) measurements of the thin films for investigating electromagnetic properties and microstructures were employed. During field annelaing for 1hr, there was no big difference n XRD patterns of Ni$_{81}$$Fe_{19}$ thin films. However, there was a significant change in XRD patterns of Ni$_{81}$$Fe_{19}$ thin films deposited at 40$0^{\circ}C$ during in-situ magnetic field deposition. The degree of surface roughness increased with increasing annealing and deposition temperature. With variation of surface roughness, there was no significant difference in MR Characteristics of Ni$_{18}$ $Fe_{19}$ thin films in 1hr-annealed case. High MR ratio was observed in the case of in-situ field deposited Ni$_{81}$$Fe_{19}$ films. 19/ films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.15-19
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• 2012

Presented herein are the results of the study that was conducted on the electrical characteristics of organic field-effect transistors based on poly(3-hexylthiophene), particularly the thickness and annealing temperature of their active layer is varied. The changes in field-effect mobility and current on/off ratio were explored. It was observed that both increasing annealing temperature from $60^{\circ}C$ to $100^{\circ}C$ and various concentrations influence the trade-off relations between the mobility and current on/off ratio. The surface morphology of the 2-${\mu}m^2$ area with various thicknesses was scanned via atomic-forcemicroscopy(AFM) to verify the relationship between surface morphology, which is related to the thickness of the film, and device performance.