Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication and characteristics of PZT ferroelectric thin films by Sol-Gel processing and rapid thermal annealing

Sol-gel법과 급속 열처리에 의한 PZT 강유전 박막의 제작과 그 특성

  • 백동수 (연세대학교 전기공학과) ;
  • 최형욱 (연세대학교 전기공학과) ;
  • 김준한 (연세대학교 전기공학과) ;
  • 신현용 (남서울대학교 전자공학과) ;
  • 김규수 (울산전문대학 전자과) ;
  • 박창엽 (연세대학교 전기공학과)
  • Published : 1994.09.01
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Abstract

In this study, ferroelectric thin films of PZT with different Zr/Ti ratio were prepared by sol-get processing and annealed by rapid thermal annealing at >$500^{\circ}C$>$-700^{\circ}C$ for 10 sec. -1 min. Structures of the annealed films were examined by X-ray diffraction and SEM. Thin films of PZT with perovskite structure have been obtained by annealing at >$600^{\circ}C$ or above and for 20 seconds or longer. Maximum remnant polarization of 10.24.mu.C/cm$^{2}$ and minimum coercive field of 20.06 kV/cm were obtained from the 56/44 and 65/35 Zr/Ti composition films, respectively. Dielectric constant, .epsilon.$_{r}$ of 500-1300 and dielectric loss, tan .delta., of 0.01-0.035 were obtained from the films.s.

Keywords