• Title/Summary/Keyword: extensions

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A SCORM-based e-Learning Process Control Model and Its Modeling System

  • Kim, Hyun-Ah;Lee, Eun-Jung;Chun, Jun-Chul;Kim, Kwang-Hoon Pio
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.5 no.11
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    • pp.2121-2142
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    • 2011
  • In this paper, we propose an e-Learning process control model that aims to graphically describe and automatically generate the manifest of sequencing prerequisites in packaging SCORM's content aggregation models. In specifying the e-Learning activity sequencing, SCORM provides the concept of sequencing prerequisites to be manifested on each e-Learning activity of the corresponding tree-structured content organization model. However, the course developer is required to completely understand the SCORM's complicated sequencing prerequisites and other extensions. So, it is necessary to achieve an efficient way of packaging for the e-Learning content organization models. The e-Learning process control model proposed in this paper ought to be an impeccable solution for this problem. Consequently, this paper aims to realize a new concept of process-driven e-Learning content aggregating approach supporting the e-Learning process control model and to implement its e-Learning process modeling system graphically describing and automatically generating the SCORM's sequencing prerequisites. Eventually, the proposed model becomes a theoretical basis for implementing a SCORM-based e-Learning process management system satisfying the SCORM's sequencing prerequisite specifications. We strongly believe that the e-Learning process control model and its modeling system achieve convenient packaging in SCORM's content organization models and in implementing an e-Learning management system as well.

A NEW EXTENSION OF THE MITTAG-LEFFLER FUNCTION

  • Arshad, Muhammad;Choi, Junesang;Mubeen, Shahid;Nisar, Kottakkaran Sooppy;Rahman, Gauhar
    • Communications of the Korean Mathematical Society
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    • v.33 no.2
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    • pp.549-560
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    • 2018
  • Since Mittag-Leffler introduced the so-called Mittag-Leffler function in 1903, due to its usefulness and diverse applications, a variety and large number of its extensions (and generalizations) and variants have been presented and investigated. In this sequel, we aim to introduce a new extension of the Mittag-Leffler function by using a known extended beta function. Then we investigate ceratin useful properties and formulas associated with the extended Mittag-Leffler function such as integral representation, Mellin transform, recurrence relation, and derivative formulas. We also introduce an extended Riemann-Liouville fractional derivative to present a fractional derivative formula for a known extended Mittag-Leffler function, the result of which is expressed in terms of the new extended Mittag-Leffler functions.

Extensions of Histogram Construction Algorithms for Interval Data (구간 데이타에 대한 히스토그램 구축 알고리즘의 확장)

  • Lee, Ho-Seok;Shim, Kyu-Seok;Yi, Byoung-Kee
    • Journal of KIISE:Databases
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    • v.34 no.4
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    • pp.369-377
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    • 2007
  • Histogram is one of tools that efficiently summarize data, and it is widely used for selectivity estimation and approximate query answering. Existing histogram construction algorithms are applicable to point data represented by a set of values. As often as point data, we can meet interval data such as daily temperature and daily stock prices. In this paper, we thus propose the histogram construction algorithms for interval data by extending several methods used in existing histogram construction algorithms. Our experiment results, using synthetic data, show our algorithms outperform naive extension of existing algorithms.

GENERALIZED SEMI COMMUTATIVE RINGS AND THEIR EXTENSIONS

  • Baser, Muhittin;Harmanci, Abdullah;Kwak, Tai-Keun
    • Bulletin of the Korean Mathematical Society
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    • v.45 no.2
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    • pp.285-297
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    • 2008
  • For an endomorphism ${\alpha}$ of a ring R, the endomorphism ${\alpha}$ is called semicommutative if ab=0 implies $aR{\alpha}(b)$=0 for a ${\in}$ R. A ring R is called ${\alpha}$-semicommutative if there exists a semicommutative endomorphism ${\alpha}$ of R. In this paper, various results of semicommutative rings are extended to ${\alpha}$-semicommutative rings. In addition, we introduce the notion of an ${\alpha}$-skew power series Armendariz ring which is an extension of Armendariz property in a ring R by considering the polynomials in the skew power series ring $R[[x;\;{\alpha}]]$. We show that a number of interesting properties of a ring R transfer to its the skew power series ring $R[[x;\;{\alpha}]]$ and vice-versa such as the Baer property and the p.p.-property, when R is ${\alpha}$-skew power series Armendariz. Several known results relating to ${\alpha}$-rigid rings can be obtained as corollaries of our results.

EXTENSIONS OF NAGATA'S THEOREM

  • Hamed, Ahmed
    • Journal of the Korean Mathematical Society
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    • v.55 no.4
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    • pp.797-808
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    • 2018
  • In [1], the authors generalize the concept of the class group of an integral domain $D(Cl_t(D))$ by introducing the notion of the S-class group of an integral domain where S is a multiplicative subset of D. The S-class group of D, $S-Cl_t(D)$, is the group of fractional t-invertible t-ideals of D under the t-multiplication modulo its subgroup of S-principal t-invertible t-ideals of D. In this paper we study when $S-Cl_t(D){\simeq}S-Cl_t(D_T)$, where T is a multiplicative subset generated by prime elements of D. We show that if D is a Mori domain, T a multiplicative subset generated by prime elements of D and S a multiplicative subset of D, then the natural homomorphism $S-Cl_t(D){\rightarrow}S-Cl_t(D_T)$ is an isomorphism. In particular, we give an S-version of Nagata's Theorem [13]: Let D be a Krull domain, T a multiplicative subset generated by prime elements of D and S another multiplicative subset of D. If $D_T$ is an S-factorial domain, then D is an S-factorial domain.

TIGHT CLOSURES AND INFINITE INTEGRAL EXTENSIONS

  • Moon, Myung-In;Cho, Young-Hyun
    • Bulletin of the Korean Mathematical Society
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    • v.29 no.1
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    • pp.65-72
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    • 1992
  • All rings are commutative, Noetherian with identity and of prime characteristic p, unless otherwise specified. First, we describe the definition of tight closure of an ideal and the properties about the tight closure used frequently. The technique used here for the tight closure was introduced by M. Hochster and C. Huneke [4,5, or 6]. Using the concepts of the tight closure and its properties, we will prove that if R is a complete local domain and F-rational, then R is Cohen-Macaulay. Next, we study the properties of R$^{+}$, the integral closure of a domain in an algebraic closure of its field of fractions. In fact, if R is a complete local domain of characteristic p>0, then R$^{+}$ is Cohen-Macaulay [8]. But we do not know this fact is true or not if the characteristic of R is zero. For the special case we can show that if R is a non-Cohen-Macaulay normal domain containing the rationals Q, then R$^{+}$ is not Cohen-Macaulay. Finally we will prove that if R is an excellent local domain of characteristic p and F-ratiional, then R is Cohen-Macaulay.aulay.

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ON A GENERALIZATION OF THE MCCOY CONDITION

  • Jeon, Young-Cheol;Kim, Hong-Kee;Kim, Nam-Kyun;Kwak, Tai-Keun;Lee, Yang;Yeo, Dong-Eun
    • Journal of the Korean Mathematical Society
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    • v.47 no.6
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    • pp.1269-1282
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    • 2010
  • We in this note consider a new concept, so called $\pi$-McCoy, which unifies McCoy rings and IFP rings. The classes of McCoy rings and IFP rings do not contain full matrix rings and upper (lower) triangular matrix rings, but the class of $\pi$-McCoy rings contain upper (lower) triangular matrix rings and many kinds of full matrix rings. We first study the basic structure of $\pi$-McCoy rings, observing the relations among $\pi$-McCoy rings, Abelian rings, 2-primal rings, directly finite rings, and ($\pi-$)regular rings. It is proved that the n by n full matrix rings ($n\geq2$) over reduced rings are not $\pi$-McCoy, finding $\pi$-McCoy matrix rings over non-reduced rings. It is shown that the $\pi$-McCoyness is preserved by polynomial rings (when they are of bounded index of nilpotency) and classical quotient rings. Several kinds of extensions of $\pi$-McCoy rings are also examined.

Dual-Gate Surface Channel 0.1${\mu}{\textrm}{m}$ CMOSFETs

  • Kwon, Hyouk-Man;Lee, Yeong-Taek;Lee, Jong-Duk;Park, Byung-Gook
    • Journal of Electrical Engineering and information Science
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    • v.3 no.2
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    • pp.261-266
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    • 1998
  • This paper describes the fabrication and characterization of dual-polysilicon gated surface channel 0.1$\mu\textrm{m}$ CMOSFETs using BF2 and arsenic as channel dopants. We have used and LDD structure and 40${\AA}$ gate oxide as an insulator. To suppress short channel effects down to 0.1$\mu\textrm{m}$ channel length, shallow source/drain extensions implemented by low energy implantation and SSR(Super Steep Retrograde) channel structure were used. The threshold voltages of fabricated CMOSFETs are 0.6V. The maximum transconductance of nMOSFET is 315${\mu}$S/$\mu\textrm{m}$, and that of pMOSFET is 156 ${\mu}$S/$\mu\textrm{m}$. The drain saturation current of 418 ${\mu}$A/$\mu\textrm{m}$, 187${\mu}$A/$\mu\textrm{m}$ are obtained. Subthreshold swing is 85mV/dec and 88mV/dec, respectively. DIBL(Drain Induced Barrier Lowering) is below 100mV. In the device with 2000${\AA}$ thick gate polysilicon, depletion in polysilicon near the gate oxide results in an increase of equivalent gate oxide thickness and degradation of device characteristics. The gate delay time is measured to be 336psec at operation voltage of 2V.

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Fabrication of SOI FinFET devices using Aresnic solid-phase-diffusion (비소 고상확산방법을 이용한 MOSFET SOI FinFET 소자 제작)

  • Cho, Won-Ju;Koo, Hyun-Mo;Lee, Woo-Hyun;Koo, Sang-Mo;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.133-134
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    • 2006
  • A simple doping method to fabricate a very thin channel body of the n-type fin field-effect-transistor (FinFET) with a 20 nm gate length by solid-phase-diffusion (SPD) process is presented. Using As-doped spin-on-glass as a diffusion source of arsenic and the rapid thermal annealing, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. Single channel and multi-channel n-type FinFET devices with a gate length of 20-100 nm was fabricated by As-SPD and revealed superior device scalability.

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Aerodynamic Characteristics of a Variable-Span Wing Flying Inside a Channel II (Effect of Asymmetric Wing Extensions) (채널 내를 비행하는 가변스팬 날개 공력특성 II (비대칭 날개 펼침))

  • Han, Cheolheui
    • Journal of Aerospace System Engineering
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    • v.10 no.3
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    • pp.39-43
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    • 2016
  • In this paper, a wind-tunnel test is accomplished to investigate the roll characteristics of a variable-span wing flying inside a channel. The factors that affect the roll characteristics of the wing were identified by analyzing the measured data; accordingly, when the wing is flying without both the ground and sidewall effects, the asymmetric wing extension causes the roll moment. Both the ground and the sidewall can increase the roll moment, but when the wing is affected by both the ground and the sidewall, the roll moment does not increase as much as the case where the wing is only affected by the ground. Also, the aerodynamic characteristics of the flying wing inside a channel are the nonlinear function of the wing height and the gap between the wingtip and the sidewall, both of which should be considered in a study of the stability and the flight control of the wing-in-ground effect of the vehicle flying inside a channel.