Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.11a
- /
- Pages.133-134
- /
- 2006
Fabrication of SOI FinFET devices using Aresnic solid-phase-diffusion
비소 고상확산방법을 이용한 MOSFET SOI FinFET 소자 제작
-
Cho, Won-Ju
(Department of Electronic materials engineering Kwangwoon Univ.) ;
- Koo, Hyun-Mo (Department of Electronic materials engineering Kwangwoon Univ.) ;
- Lee, Woo-Hyun (Department of Electronic materials engineering Kwangwoon Univ.) ;
-
Koo, Sang-Mo
(Department of Electronic materials engineering Kwangwoon Univ.) ;
-
Chung, Hong-Bay
(Department of Electronic materials engineering Kwangwoon Univ.)
-
조원주
(광운대학교 전자재료공학과) ;
- 구현모 (광운대학교 전자재료공학과) ;
- 이우현 (광운대학교 전자재료공학과) ;
-
구상모
(광운대학교 전자재료공학과) ;
-
정홍배
(광운대학교 전자재료공학과)
- Published : 2006.11.09
Abstract
A simple doping method to fabricate a very thin channel body of the n-type fin field-effect-transistor (FinFET) with a 20 nm gate length by solid-phase-diffusion (SPD) process is presented. Using As-doped spin-on-glass as a diffusion source of arsenic and the rapid thermal annealing, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the