• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.1001-1003
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• 1998

In this paper, $Ar^+$ ion laser etching process of single/poly crystalline silicon with $CCl_{2}F_{2}$ gas is studied for MEMS applications. To investigate the effects of process parameters, laser power, gas pressure, scanning speed were varied and multiple scanning was carried out to obtain high aspect ratio. In addition, scanning width was varied to observe the trench profile etched in repeating scanning cycle. From the etching of $2.6{\mu}m$ thick polycrystalline Si deposited on insulator, trench with flat bottom and vertical side wall was obtained and it is possible to apply this results for MEMS applications.

• 한국정보전자통신기술학회논문지
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• 제13권5호
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• pp.412-418
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• 2020

본 논문은 에칭액(FeCl₃)의 비중을 정확히 제어할 수 있는 자동 액 관리시스템을 제작하여 OLED에 적용되는 SUS MASK 제작하였다. 그리고 홀 직경을 0.4 mm로 목표치를 정하였다. 본 실혐 결과, FeCl₃의 비중(S.G) 값을 1.43에서 1.49까지 변화를 주었을때 에칭 속도는 빨라졌다. 그리고 비중이 1.49일 때, 홀직경이 0.405 mm로의 목표치에 접근한 것을 알 수가 있었다. 압력분사를 2.0 kg/cm2~3.5 kg/cm2까지 변화를 주었을 때 3.0 kg/cm2에서 홀 직경은 평균 0.4 mm로 목표치와 일치하였다. FeCl₃에 HCl과 H2O을 혼합하여 비중을 1.430으로 설정하고 분사 압력을 3.0 kg/cm2으로 고정시키고 첨가제를 1.2%로 적용하여 비중 변화에 따른 특성을 분석하였다. 비중을 1.460 ~ 1.469까지 변화주었을 때 비중이 증가할수록 에칭속도는 0.564에서 0.540으로 빨라졌다. 그리고 비중이 1.467일 때 홀 직경이 0.4 mm로 측정되어 목표치에 도달하였다.

• The Journal of Advanced Prosthodontics
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• 제6권6호
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• pp.434-443
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• 2014

PURPOSE. The purpose of this study was to evaluate and compare the effects of different surface pretreatment techniques on the surface roughness and shear bond strength of a new self-adhering flowable composite resin for use with lithium disilicate-reinforced CAD/CAM ceramic material. MATERIALS AND METHODS. A total of one hundred thirty lithium disilicate CAD/CAM ceramic plates with dimensions of $6mm{\times}4mm$ and 3 mm thick were prepared. Specimens were then assigned into five groups (n=26) as follows: untreated control, coating with $30{\mu}m$ silica oxide particles ($Cojet^{TM}$ Sand), 9.6% hydrofluoric acid etching, Er:YAG laser irradiation, and grinding with a high-speed fine diamond bur. A self-adhering flowable composite resin (Vertise Flow) was applied onto the pre-treated ceramic plates using the Ultradent shear bond Teflon mold system. Surface roughness was measured by atomic force microscopy. Shear bond strength test were performed using a universal testing machine at a crosshead speed of 1 mm/min. Surface roughness data were analyzed by one-way ANOVA and the Tukey HSD tests. Shear bond strength test values were analyzed by Kruskal-Wallis and Mann-Whitney U tests at ${\alpha}=.05$. RESULTS. Hydrofluoric acid etching and grinding with high-speed fine diamond bur produced significantly higher surface roughness than the other pretreatment groups (P<.05). Hydrofluoric acid etching and silica coating yielded the highest shear bond strength values (P<.001). CONCLUSION. Self-adhering flowable composite resin used as repair composite resin exhibited very low bond strength irrespective of the surface pretreatments used.

• 한국정밀공학회지
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• 제23권9호
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• pp.164-173
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• 2006

The cooling capacity of a micro-heat pipe is mainly governed by the magnitude of capillary pressure induced in the wick structure. For microchannel wicks, a higher capillary pressure is achievable for narrower and deeper channels. In this study, a metallic micro-heat pipe adopting high-aspect-ratio microchannel wicks is fabricated. Micromachining of high-aspect-ratio microchannels is done using the laser-induced wet etching technique in which a focused laser beam irradiates the workpiece placed in a liquid etchant along a desired channel pattern. Because of the direct writing characteristic of the laser-induced wet etching method, no mask is necessary and the fabrication procedure is relatively simple. Deep microchannels of an aspect ratio close to 10 can be readily fabricated with little heat damage of the workpiece. The laser-induced wet etching process for the fabrication of high-aspect-ratio microchannels in 0.5mm thick stainless steel foil is presented in detail. The shape and size variations of microchannels with respect to the process variables, such as laser power, scanning speed, number of scans, and etchant concentration are closely examined. Also, the fabrication of a flat micro-heat pipe based on the high-aspect-ratio microchannels is demonstrated.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권12호
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• pp.601-605
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• 2006

The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multi-layer interconnections in smaller scales with higher integration density. Low-k materials are applied to the inter-metal dielectric (IMD) materials in order to overcome the RC delay. Relaxation continuum (RCT) model that includes neutral-species transport model have developed to model the etching process in a capacitively coupled plasma (CCP) device. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with $N_2/H_2$ gas mixture that is known as promising one for organic low-k materials etching. For the etching of low-k materials by $N_2/H_2$ plasma, N and H atoms have a big influence on the materials. Moreover the distributions of excited neutral species influence the plasma density and profile. We include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatio-temporal steady state profile could be obtained.

• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.19-24
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• 2021

As the size of semiconductor devices decreases, the etching pattern becomes very narrow and a deep high aspect ratio process becomes important. The cryogenic etching process enables high aspect ratio etching by suppressing the chemical reaction of reactive ions on the sidewall while maintaining the process temperature of -100℃. ESC is an important part for temperature control in cryogenic etching equipment. Through the cooling path inside the ESC, liquid nitrogen is used as cooling water to create a cryogenic environment. And since the ESC directly contacts the wafer, it affects the temperature uniformity of the wafer. The temperature uniformity of the wafer is closely related to the yield. In this study, the cooling path was designed and analyzed so that the wafer could have a uniform temperature distribution. The optimal cooling path conditions were obtained through the analysis of the shape of the cooling path and the change in the speed of the coolant. Through this study, by designing ESC with optimal temperature uniformity, it can be expected to maximize wafer yield in mass production and further contribute to miniaturization and high performance of semiconductor devices.

• Restorative Dentistry and Endodontics
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• 제32권4호
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• pp.365-376
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• 2007

본 연구의 목적은 3종의 전체산부식 상아질 접착 시스템에서 적절한 산부식 시간과 접착제의 침투 능력에 대해 규명하고자 하였다. 우식이 없는 54개의 제3대구치의 상아질 표면을 5, 15, 25초 동안 산부식하고 산부식형 접착제 3종 (Scotchbond multipurpose, Single Bond, One Step) 을 도포한 후 복합레진을 충전하였다. 각 시편은 0회 (대조군) 또는 2000회 열순환 ($5^{\circ}C\;-\;55^{\circ}C$) (실험군) 후 미세인장강도를 측정하고 파단면을 관찰하여 다음과 같은 결론을 얻었다. 1. 실험군은 대조군에 비하여 결합강도가 감소하였으며, 특히 25초 산부식한 SM 및 SB군에서는 통계학적 유의차를 나타내었다. 2. 열순환 처리한 SM군과 SB군의 경우, 25초 간 산부식한 군이 5초 간 산부식한 군과 15초 간 산부식한 군에 비해 유의성 있게 낮은 결합강도를 나타냈다 (p < 0.05). 3. OS군의 경우, 산부식 시간 및 열순환 여부에 따른 유의성 있는 차이가 나타나지 않았다 (p > 0.05). 상아질 접착의 내구성은 접착제의 용매와 산부식 시간에 의해 영향을 받으며 특히, ethanol-based adhesive를 사용할 때 과도한 산부식은 유의해야 한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• Restorative Dentistry and Endodontics
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• 제18권1호
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• pp.114-121
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• 1993

The purpose of this study was to evaluate the effect on treatment methods to shear bond strength between composite resin and amalgam when the alloy surface was finished with a diamond wheel or an sandblaster. Forty round acrylic cylinders were fabricated with a diameter of 33mm and a height of 20mm to fit into the device used during shear bond strength testing. A round undercut cavity (diameter, 8mm: depth, 2.5mm) was prepared in the center of the acrylic surface and the cavity was restored using a amalgam. A total of 40 acrylic cylinders with amalgam were divided into 4 groups according to treatment method. The group treatment were as follows : Group 1 : acid etching after finishing the amalgam with diamond wheel Group 2 : no acid etching after finishing the amalgam with diamond wheel Group 3 : acid etching after sandblasting the amalgam Group 4 : no acid etching after sandblasting the amalgam The shear bond strength of composite resin bonded to amalgam of each specimen was tested with a universal testing machine at a crosshead speed of 0.5mm/min and 500kg in full scale. The results were as follow: 1. After diamond finishing, the non-acid etching group had highest shear bond strength with 7.29kg/$cm^2$ and after sandblasting, the acidetching group had lowest shear bond strength with 4.49kg/$cm^2$. 2. In both diamond finishing and sandblasting group, acid etching of the roughened amalgam surface decreased the shear bond strength. 3. The group treated with a diamond wheel had higher shear bond strength those treated with an sandblaster but there was not significanat.