Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
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- Pages.168-168
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- 2008
Etch characteristics of TiN thin film adding $Cl_2$ in $BCl_3$ /Ar Plasma
$BCl_3$ /Ar 플라즈마에서 $Cl_2$ 첨가에 따른 TiN 박막의 식각 특성
- Um, Doo-Seung (Chung-Ang Univ.) ;
- Kang, Chan-Min (Chung-Ang Univ.) ;
- Yang, Xue (Chung-Ang Univ.) ;
- Kim, Dong-Pyo (Chung-Ang Univ.) ;
- Kim, Chang-Il (Chung-Ang Univ.)
- Published : 2008.06.19
Abstract
Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like