• Journal of the Korean Society of Radiology
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• v.9 no.7
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• pp.459-465
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• 2015

Energy absorption distribution according to lead shielding for 511 keV ${\gamma}$ ray was evaluated using a Monte Carlo simulation in PET/CT. Experimental method was performed about the depth of skin surface(0.07), lens(3) and the depth(10) was conducted by using ICRU Slab phantom. Difference of energy absorption distribution according to lead thickness and effect of air gap according to distance of lead and phantom. As a result, study showed that using a lead shielding makes high energy distribution by backscatter electron. As a distance between lead and phantom increased, energy absorption distribution gradually decreased. 9 cm or more air gap should exist to prevent effect of backscatter electron which reaches skin surface, when 0.25 mmPb shielding is used. Also 1 cm or more air gap was needed to prevent the effect in 0.5 mmPb. If air gap was not concerned, 0.75 mm or more lead thickness was necessary to prevent effect of backscatter electron.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.72.1-72.1
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• 2010

Thin film a-Si solar cells deposited by PECVD have many advantages compared to the traditional crystalline Si solar cells. They do not require expensive Si wafer, the process temperature is relatively low, possibility of scaling up for mass production, etc. In order to produce thin film solar cells, understanding the relationship between the material characteristics and deposition conditions is important. It has been reported by many groups that the band gap of the a-Si material and the deposition rate has an linear relationship, when RF power is used to control both. However, when the process pressure is changed in order to control the deposition rate and the band gap, a diversion from the well known linear relationship occurs. Here, we explain this diversion by the deposition condition crossing different plasma regions in the Paschen curve with a simple model. This model will become a guide to which condition a-Si thin films must be fabricated in order to get a high quality film.

• Tribology and Lubricants
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• v.13 no.2
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• pp.52-59
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• 1997

An experimental study is presented for the characteristics of the high temperature superconductor as an application of the repulsive type magnetic bearing. A ring shaped YBCO type superconductor and Neodium permanent magnets are employed for the experiment. For the case of field cooling, superconductor shows strong repulsive force, which is due to the Meissner effect, as the gap between the superconductor and the magnet gets closer. The repulsive force variation with respect to the gap change shows hysterisis characteristics. The area of the loop of the hysterisis curve represents the dissipation of energy, which reveals that the magnetic bearing with superconductor has large damping. The effect of the initial gap and the magnetic flux density on the repulsive force is analyzed experimentally and the static stiffness variation is calculated from the measured repulsive force variation. The relative sliding velocity between the superconductor and the magnet has little effect on the repulsive force which is quite different from the usual sliding element bearing. As the initial gap for the field cooling becomes larger, the maximum repulsive force at the minimum gap increases and approaches to the value for the case of zero field cooling.

• Journal of Hydrogen and New Energy
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• v.27 no.2
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• pp.211-219
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• 2016

To develop an ash separator for the solid fuel chemical looping combustion system, effects of operating variables such as solid injection nozzle velocity, diameter of solid injection nozzle, gap between solid injection line and vent line, vent line inside diameter, and solid intake height on solid separation rate and solid separation efficiency were measured and discussed using heavy and coarse particle and light and fine particles mixture as bed material in an acrylic fluidized bed apparatus. The solid separation rate increased as the solid injection nozzle velocity and the diameter of solid injection nozzle increased. However, the solid separation rate decreased as the gap between solid injection line and vent line, the vent line inside diameter, and the solid intake height increased. The solid separation efficiency was in inverse proportion to the solid separation rate. In this study, we could get high solid separation rate up to 2.39 kg/hr with 91.6% of solid separation efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.50-53
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• 1995

In this paper we have obtained property by considering the change of optical energy gap as a function of photo-does for exposing photo on Ag/a-Se$\sub$75/Ge$\sub$25/ thin films. This U-type property was obsered for all photo-exposing except for blu-pass filtered Hg lamep. Expecially, very large band shift(~0.3[eV]) is obtained by exposing He-Ne laser (6328[${\AA}$]). It is impossible to explain this property for exposing He-Ne and semiconductor laser through DWP model, which was explained for photo-exposing above the energy gap. Therefore we suggest a new modified model of DWP model for Ag/a-Se$\sub$75/Ge$\sub$25/ bilayer thin films.

• Carbon letters
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• v.26
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• pp.61-65
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• 2018

Comprehensive calculations of the Rh decoration effect on zigzag CNTs with n ranging from 7 to 12 were conducted in this work to understand the effect of Rh doping on geometric structures and electronic behaviors upon metallic and semiconducting CNTs. The obtained results indicated that Rh dopant not only contributes to the deformation of C-C bonds on the sidewall of CNTs, but also transforms the electron distribution of related complexes, thereby leading to a remarkable increase of the conductivity of pure CNTs given the emerged novel state within the energy gap for metallic CNTs and the narrowed energy gap for semiconducting CNTs. Our calculations will be meaningful for exploiting novel CNT-based materials with better sensitivity to electrons and higher electrical conductivity compared with pure CNTs.

• Journal of Energy Engineering
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• v.8 no.2
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• pp.285-292
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• 1999

The design parameter of the reactor vessel insulation for the Korea Standard Power Plant has been studied numerically. The heat loss from the reactor vessel through the insulation is analysed by using the computational fluid dynamics code, FLUENT. Parametric study has been performed on the air gap width between the reactor vessel wall and the inner surface of the insulation, and on the insulation thickness. Also evaluated is the performance degradation due to the chimney effect caused by gaps between the panels during the installation of the insulation system. From the analysis results, the optimal air gap width and the optimal insulation thickness are obtained.

• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.277-281
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• 2004

$Hg_{1-x}Cd_{x}Te$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111)/GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.278-281
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• 2011

The optical band gap energy for $SrTiO_3$ by reduction at high temperature was 3.15 eV. The reflectivity of reduced $SrTiO_3$ single crystals showed little variation, however, the reflectivity by the reduction condition had no effect. For the phonon mode at about 790 $cm^{-1}$, a blue-shift took place upon $N_2$ reduction and the decreased. However, a red-shift took place upon a $H_2-N_2$ reduction and the increased at the same phonon mode. With decreasing temperature the dielectric constant decreased rapidly. The thermal activation energies were 0.92-1.02 eV.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.152-152
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• 2003

Hg$\sub$l-x/Cd$\sub$x/Te (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590$^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was 5 $\mu\textrm{m}$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment The photoconductor characterization for the epilayers was also measured The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out