Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The U-type Model on Ag Doping effect in Amorphous Chalcogenide thin films

비정질 칼코게나이드박막으로서의 Ag 도핑효과에 대한 U-형 모델

  • 김민수 (광운대학교 전자재료공학과) ;
  • 이현용 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 1995.05.01
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Abstract

In this paper we have obtained property by considering the change of optical energy gap as a function of photo-does for exposing photo on Ag/a-Se$\sub$75/Ge$\sub$25/ thin films. This U-type property was obsered for all photo-exposing except for blu-pass filtered Hg lamep. Expecially, very large band shift(~0.3[eV]) is obtained by exposing He-Ne laser (6328[${\AA}$]). It is impossible to explain this property for exposing He-Ne and semiconductor laser through DWP model, which was explained for photo-exposing above the energy gap. Therefore we suggest a new modified model of DWP model for Ag/a-Se$\sub$75/Ge$\sub$25/ bilayer thin films.

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