• Title/Summary/Keyword: energy FWHM

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Characteristics of the X-ray Fluorescence by the 40kV transmission anode x-ray tube (40kV용 투과양극형 x-ray tube에 의한 X-ray 형광 특성)

  • Kim, Sung-Soo;Kim, Do-Yun
    • Journal of the Korean Vacuum Society
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    • v.17 no.3
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    • pp.247-252
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    • 2008
  • By using the transmission anode x-ray tube developed to apply to the hand-held XRF equipment, we carried out XRF experiment and evaluated the influences of the x-ray tube on XRF spectra. XRF data, which is measured using the W-target and Rh-target tube, were good agreements with the known results. FWHM of Fe $K_{\alpha}$-line measured by W-target tube with the 35 kV-tube voltage and the $40{\mu}A$-tube current was 180 eV. This result reveals that our XRF equipment using the transmission anode x-ray tube is enough for a qualitative analysis of materials. By comparison XRF data with the integrated intensity of x-ray tube, it was confirmed that Rh-target tube is better than W-target tube for application to the hand-held XRF equipment.

FABRICATION OF Nb/Al SUPERCONDUCTING TUNNEL JUNCTION (Nb/Al SUPERCONDUCTING TUNNEL JUNCTION의 제작)

  • Cho, Sung-Ik;Park, Young-Sik;Park, Jang-Hyun;Lee, Yong-Ho;Lee, Sang-Kil;Kim, Sug-Whan;Han, Won-Yong
    • Journal of Astronomy and Space Sciences
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    • v.21 no.4
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    • pp.481-492
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    • 2004
  • We report the successful fabrication and I-V curve superconductivity test results of the Nb/Al-based superconducting tunnel junctions. STJs with side-lengths of 20, 40, 60 and $80{\mu}m$ were fabricated by deposition of polycrystalline Nb/Al/AlOx/Al/Nb 5-layer thin films incorporated on a 3-inch Si wafer. STJ was designed by $Tanner^{TM}$ L-Edit 8.3 program, and fabricated in SQUID fabrication facility, KRISS. S-layer STJ thin-films were fabricated using UV photolithography, DC magnetron sputtering, Reactive ion etching, and CVD(Chemical Vapor Deposition) techniques. Superconducting state test for STJ was succeeded in 4K with liquid helium cooling system. Their performance indicators such ie energy gap, normal resistance, normal resistivity, dynamic resistance, dynamic resistivity, and quality factor were measured from I-V curve. Fabricated Nb/Al STJ shows $11\%$ higher FWHM energy resolution than genuine Nb STJ.

Collimator Selection in Nuclear Medicine Imaging Using I-123 Generated by Te-124 Reaction (Te-124 Target로 생산된 I-123 SPECT 영상에서의 조준기 선택)

  • Kim, Hee-Joung;Son, Hye-Kyung;Bong, Joung-Kyun;Nam, Ki-Pyo;Lee, Hee-Kyung
    • The Korean Journal of Nuclear Medicine
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    • v.30 no.3
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    • pp.372-378
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    • 1996
  • In the case of $^{123}I$ from the $^{124}Te$(p,2n)reaction, the radionuclidic impurity is the high-energy gamma-emitting $^{124}I$, which interferes greatly with nuclear medicine images. The choice of a collimator can affect the quality of clinical SPECT images of [I-123]MIBG, [I-123] ${\beta}$-CIT, or [I-123]IPT. The tradeoffs that two different collimators make among spatial resolution, sensitivity, and scatter were studied by imaging a line source at 5cm, 10cm, 15cm distance using a number of plexiglass sheets between source and collimator, petri dish, two-dimensional Hoffman brain phantom, Jaszczak phantom, and three-dimensional Hoffman brain phantom after filling with $^{123}I$. (FWHM, FWTM, Sensitivity) for low-energy ultrahigh-resolution parallel - hole (LEUHRP) collimator and medium- energy general - purpose (MEGP) collimator were measured as (9.27mm, 61.27mm, $129CPM/{\mu}Ci$) and (10.53mm, 23.17mm, $105CPM/{\mu}Ci$), respectively. The image quality of two-dimensional Hoffman brain phantom with LEUHRP looked better than the one with MEGP. However, the image quality of Jaszczak phantom and three-dimensional Hoffman brain phantom with LEUHRP looked much worse than the one with MEGP because of scatter contributions in three-dimensional imaging situation. The results suggest that the MEGP is preferable to LEUHRP for three-dimensional imaging studies of [I-123]MIBG, [I-123] ${\beta}$-CIT, or [I-123]IPT.

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Effects of Scintillation Crystal Surface Treatments on Small Gamma Camera Imaging (섬광체 옆 표면처리가 소형 감마카메라 영상에 미치는 효과)

  • Kim, J. H.;Choi, Y.;Kim, J. Y.;Oh, C. H.;Kim, S. E.;Choe, Y. S.;Lee, K. H.;Joo, K. S.;Kim, B. T.
    • Journal of Biomedical Engineering Research
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    • v.20 no.6
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    • pp.515-521
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    • 1999
  • Scintillator crystal is an important part and detcrmines performance characteristics of the gamma camera. We investigated the offects of scintillation crystal surface treatment on gamma camera imaging. Nal(TI) and Csl(Tl) scintillators. 20 mm diameter and 10 mm thickness, applied with two different surface treatments, white and black reflcetors, were applied to Nal(Tl) and Csl(Ti). The optical properties of generated scintillation light were evaluated by Monte Carlo simulation method and by actual measurement using a position sensitive photomultiplier tube (PSPMT). We measured sensitivity, energy resolution and spatial resolution of gamma camera with the various scintillators coupled to a PSPMT. In the simulation. Nal(Tl)-white prosented the best sensitivity. In the measurements, the sensitivities and the intrinsic spatial resolutions of Nal(Tl)-white, Nal(Tl)-black. CsI(Tl)-white, CsI(Tl)-black were 2920, 2322, 1754, 1401 cps/$\mu$ci and 5.2, 4.5, 7.0, 6.3 mm FWHM. respectively. Their intrinsic energy resolutions were mesured 12.5, 23.5, 20.5, 33.3% FWHM at 140 keV Tc-99m. In this study, we investigated the offects of a side surface treatment of the scintillator on the gamma camera imaging. Simulation and measurement prescnted similat trends. Based on the results, we concluded that the surface of th NaI(Tl)seintillator must be treated by absorptive materials in order to develop the gamma camera having good spatial resolution.

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Development of Meander-shaped Metallic Magnetic Calorimeters

  • Yoon, W.S.;Jang, Y.S.;Kim, G.B.;Lee, H.J.;Lee, J.Y.;Lee, M.K.;Kim, Y.H.
    • Progress in Superconductivity
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    • v.14 no.2
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    • pp.102-105
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    • 2012
  • We are developing meander-shaped metallic magnetic calorimeters using micro-fabrication methods. A planar Nb coil in a meander shape was fabricated on a Si substrate. The coil was designed to have a persistent current using a metal heater evaporated on a part of the coil. A paramagnetic sensor, $5{\mu}m$ thick Au:Er foil, was glued on top of the meander structure with epoxy. The magnetization and heat capacity were measured at different temperatures, and applied field currents matched well with expected values. The detector showed an energy resolution of 4 keV FWHM for the 5.5 MeV alpha particles.

Growth and characterization of ZnSe/GaAs epilayer by hot-wall epitaxy method (Hot-Wal Epitaxy 방법에 의한 ZnSe/GaAs 박막 성장과 특성)

  • 정태수;강창훈;유평렬
    • Journal of the Korean Vacuum Society
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    • v.8 no.3B
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    • pp.302-307
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    • 1999
  • We have grown a high quality ZnSe(100) epilayer on the GaAs(100) substrate by hot-wall epitaxy method. The FWHM value from double-crystal x-ray diffraction rocking curve and growth rate of the ZnSe epilayer grown under the optimal growth conditions were 195 arcsec and 0.03 $\mu \textrm m$/min, respectively. The $I_2^U$ and $I_2^L$ peaks, which split by strain due to lattice mismatch between substrate and epilayer, were measured from the photoluminescence experiment. And we found that the residual impurities in ZnSe epilayer were concerned with Al or CI elements from the calculated binding energy of donor impurity.

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Fabrication of Superconducting Transition Edge Sensors based on Ti/Au Bilayer Formation (Ti/Au 이중층을 이용한 초전도 상전이 센서 제작)

  • Lee, Young-Hwa;Kim, Yong-Hamb
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.10
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    • pp.943-949
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    • 2008
  • We report on the development of transition edge sensors for x-ray detection. The sensor technology was based on the fabrication of a superconducting film on a thin membrane. A bilayer of a superconductor, Ti, and a noble metal, Au, was e-beam evaporated on a micromachined SiNx. Another Au layer was evaporated on the two side edges of the bilayer in order not to be affected by structural imperfections at the boundaries. With the method described in the present report, the superconducting transition temperature of the device was consistently achieved to near 80 mK with a sharp transition. The energy spectrum ueasured with the device provided 37 eV FWHM for 5.9 x-rays. We also discuss the design and fabrication considerations as well as the performance of the device in detail.

Characteristics of ZnO Thin Films Grown on p-type Si and Sapphire Substrate by Pulsed Laser Deposition

  • Lee, K. C.;Lee, Cheon
    • KIEE International Transactions on Electrophysics and Applications
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    • v.3C no.6
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    • pp.241-245
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    • 2003
  • ZnO thin films on (l00) p-type Si and sapphire substrates have been deposited by a pulsed laser deposition technique using an Nd:YAG laser with a wavelength of 266 nm. The influence of the deposition parameters such as oxygen pressure, substrate temperature and laser energy density on the properties of the grown films was studied. The experiments were performed for substrate temperatures in the range of 200∼50$0^{\circ}C$ and oxygen pressure in the range of 100∼700 sccm. All of the films grown in this experiment show strong c-axis orientation with (002) textured ZnO peak. With increasing substrate temperature, the FWHM (full width at half maximum) and surface roughness were decreased. In the case of using sapphire substrate, the intensity of PL spectra increased with increasing ambient oxygen flow rate. We investigated the structural and morphological properties of ZnO thin films using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM).

The properties of Zn doped GaN grown by HVPE (HVPE에 의해 성장된 Zn가 첨가된 GaN의 특성)

  • 정성훈;김우람;홍필영;문동찬;김선태
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.44-47
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    • 1997
  • In spite of the addtion of Zn, a high quality of Zn-doped GaN film were prepared. The growth rates of Zn-doped GaN films were varied from 0.14${\mu}{\textrm}{m}$/min to 0.05${\mu}{\textrm}{m}$/min according to the amount of Zn incorporated, The smallest value of the FWHM of x-ray rocking curve was 407 arcsec. The Zn-related Photoluminescence emission peaks which occurred at 2.927 and 2.824 eV shifted toward the low energy region by increasing Zn partial pressures. It was compared between the intensities of D-A pair (3.259eV) and that of the exciton bound to acceptor band(E$_{x-A}$=3.449eV).).

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A new gas jet type Z-pinch extreme ultraviolet light source for next generation lithography (리소그라피를 위한 새로운 가스젯 방식의 Z방전 극자외선 광원)

  • Song, In-Ho;Choi, Chang-Ho;Ko, Kwang-Cheol;Hotta, Eiki
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1459-1460
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    • 2006
  • A new gas jet Z-pinch EUV light source having double gas jet electrodes has been developed. It has two nozzles and two diffusers. The EUV beam is collected from the side of pinch plasma, generated in between the inner nozzle and corresponding diffuser. A cylindrical shell of He gas curtain produced by the outer nozzle is specially designed for shielding the debris and suppressing the inner gas expansion. We have succeeded in generating EUV energy of 1.22 mJ/sr/2%BW/pulse at 13.5nm. The estimated dimension of EUV source is to be FWHM diameter of 0.07 mm and length of 0.34 mm, and FW 1/e2 diameter of 0.15 mm and length of 1.2 mm.

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