Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2006.07c
- /
- Pages.1459-1460
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- 2006
A new gas jet type Z-pinch extreme ultraviolet light source for next generation lithography
리소그라피를 위한 새로운 가스젯 방식의 Z방전 극자외선 광원
- Song, In-Ho (POSCON R&D) ;
- Choi, Chang-Ho (POSCON R&D) ;
-
Ko, Kwang-Cheol
(Hanyang Univ.)
;
- Hotta, Eiki (Tokyo Institute of Technology)
- Published : 2006.07.12
Abstract
A new gas jet Z-pinch EUV light source having double gas jet electrodes has been developed. It has two nozzles and two diffusers. The EUV beam is collected from the side of pinch plasma, generated in between the inner nozzle and corresponding diffuser. A cylindrical shell of He gas curtain produced by the outer nozzle is specially designed for shielding the debris and suppressing the inner gas expansion. We have succeeded in generating EUV energy of 1.22 mJ/sr/2%BW/pulse at 13.5nm. The estimated dimension of EUV source is to be FWHM diameter of 0.07 mm and length of 0.34 mm, and FW 1/e2 diameter of 0.15 mm and length of 1.2 mm.
Keywords