• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1591-1593
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• 2008

The tubular field emission lamp (FEL) was developed using a wire type carbon-nano-structure emitter called CNX The luminous efficiency of the tubular FEL (diode type, diameter: ${\varphi}15.5mm$, length: 200mm) has already achieved around 45lm/W and we expect to achieve over 60lm/W within the year.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.722-726
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• 2003

본 논문에서는 Porous poly-silicon cold cathode에 의해 전자를 방출하는 Ballistic electron surface-emitting display(BSD)의 전계방출 특성을 실험했다. BSD는 nanocrystalline을 둘러싼 산화막을 multi-tunneling한 전자에 의해 발광이 되는 mechanism이기 때문에 산화막의 두께를 변수로 두어 특성을 실험했다. 900℃에서 1시간에서 3시간까지 30분 간격으로산화 반응을 진행하였으며, leakage current와 emission current의 비로 효율을 나타내었을 때 1시간 30분 동안 산화 반응을 한 시료가 가장 좋은 특성을 나타내었다.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.1
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• pp.34.1-34.1
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• 2012

I present an analysis of the linear polarization of six active galactic nuclei (AGN). We monitored our targets from 2007 to 2011 in the observatory-frame frequency range 80-253 GHz with the Plateau de Bure Interferometer (PdBI). We find average degrees of polarization in the range 2-7%; this indicates that the polarization signals are effectively averaged out by the emitter geometries. We see indication for the presence of strong shocks and/or variability of the emitter geometries. We attempt to derive rotation measures for all sources, leading to actual measurements for two targets which find the highest rotation measures reported to date for AGN.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.13-16
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• 2001

InP/InGaAs Heterojunction phototransistors(HPT's) with an optically transparent ITO emitter electrode were fabricated and characterized. At the same time, heterojuntion transistors(HBT's) having the same device layout were fabricated. By comparison with InP/InGaAs HBT's, the do characteristics of InP/InGaAs HPT's showed the similar electrical charateristics of HBT's. the model parameters of the device were extracted and compared.

• Journal of the Korean Institute of Telematics and Electronics
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• v.6 no.1
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• pp.19-22
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• 1969

Detailed analysis has been developed concerning the transfer function and stability condition of the logarithmic amplifier using a common emitter transistor as a feed-back element. The analysis shows that input current vs output voltage transfer characteristics is accurately ogarithmic through entire operating current, and the time constant depends on input capcitance and collector-emitter equivalent resistance. Also the minimum value of imput capacitance required to stabilize the system is derived.

• 전기의세계
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• v.56 no.2
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• pp.14-17
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• 2007

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.39.2-39.2
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• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.4
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• pp.743-748
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• 2010

Boron nitride (BN) and carbon nitride (CN) films, which have relatively low work functions and commonly exhibit negative electron affinity behaviors, were coated on carbon nanotubes (CNTs) by magnetron sputtering. The CNTs were directly grown on metal-tip (tungsten, approximately 500nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). The variations in the morphology and microstructure of CNTs due to coating of the BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM). The energy dispersive x-ray (EDX) spectroscopy and Raman spectroscopy were used to identify the existence of the coated layers (CN and BN) on CNTs. The electron-emission properties of the BN-coated and CN-coated CNT-emitters were characterized using a high-vacuum field emission measurement system, in terms of their maximum emission currents ($I_{max}$) at 1kV and turn-on voltage ($V_{on}$) for approaching $1{\mu}A$. The results showed that the $I_{max}$ current was significantly increased and the $V_{on}$ voltage were remarkably reduced by the coating of CN or BN films. The measured values of $I_{max}-V_{on}$ were as follows; $176{\mu}A$-500V for the 5nm CN-coated emitter and $289{\mu}A$-540V for the 2nm BN-coated emitter, respectively, while the $I_{max}-V_{on}$ of the as-grown (i.e., uncoated) emitter was $134{\mu}A$-620V. In addition, the CNT emitters coated with thin CN or BN films also showed much better long-term (up to 25h) stability behaviors in electron emission, as compared with the conventional CNT emitter.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.107.1-107.1
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• 2011

현재 상용으로 많이 사용되는 p-type 태양전지는 Dopant로 사용된 Boron이 $O_2$와 결합하면서 Light induced degradation이 발생하여 태양 전지 효율의 감소를 불러일으키는 단점이 있다. 이러한 문제를 해결하기 위하여 여러 가지 방법들이 제시되었는데 일반적으로 n-type wafer를 이용함으로써 Light induced degradation을 해결하는 방법이 주로 사용된다. n-type 태양전지를 제조함에 있어서 보다 높은 효율을 달성하기 위하여 태양전지 후면 구조에 local contact 개념을 도입하여 rear local emitter를 형성함으로써 전체적인 효율 증가를 도모하였다. 이러한 local contact을 제조하기 위해서는 전기적으로 구조적으로 고려할 사항들이 여러 가지 존재한다. 따라서 우리는 이러한 고려 사항들을 실험적인 방법으로 결정하는 것이 아니라, 정교한 변수 통제를 이용한 시뮬레이션으로 최종적인 효율 상승을 가져오는 조건을 찾으려고 한다. 이때 사용될 수 있는 시뮬레이션은 여러 가지 종류가 존재하는데 우선 상용 태양전지의 해석에 가장 많이 사용되는 PC1D프로그램이 있다. 그러나 PC1D의 경우에는 1차원의 해석만 가능하기 때문에 local contact의 2차원 이상의 구조 변화에 따른 최종적인 효율을 계산하는데 무리가 따르게 된다. 따라서 2차원 이상의 형상에 대한 분석이 가능한 프로그램을 이용하여 실제 셀에서 일어나는 현상을 더 정밀하게 모사함으로써 local contact에서 일어나는 전기적, 구조적 변화가 최종적인 효율에 어떻게 영향을 미치는지를 파악해볼 것이며, 어떤 구조를 선택하였을 때 가장 높은 효율을 달성할 수 있는지 알아보려고 한다.

• Current Photovoltaic Research
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• v.2 no.4
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• pp.147-151
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• 2014

A boron doping process using a boron tri-bromide ($BBr_3$) as a boron source was applied to form a $p^+$ emitter layer on an n-type mono-crystalline CZ substrate. Nitrogen ($N_2$) gas as an additive of the diffusion process was varied in order to study the variations in sheet resistance and the uniformity of doped layer. The flow rate of $N_2$ gas flow was changed in the range 3 slm~10 slm. The sheet resistance uniformity however was found to be variable with the variation of the $N_2$ flow rate. The optimal flow rate for $N_2$ gas was found to be 4 slm, resulting in a sheet resistance value of $50{\Omega}/sq$ and having a uniformity of less than 10%. The process temperature was also varied in order to study its influence on the sheet resistance and minority carrier lifetimes. A higher lifetime value of $1727.72{\mu}s$ was achieved for the emitter having $51.74{\Omega}/sq$ sheet resistances. The thickness of the boron rich layer (BRL) was found to increase with the increase in the process temperature and a decrease in the sheet resistance was observed with the increase in the process temperature. Furthermore, a passivated emitter solar cell (PESC) type solar cell structure comprised of a boron doped emitter and phosphorus doped back surface field (BSF) having Ni/Cu contacts yielding 15.32% efficiency is fabricated.