• 한국안전학회지
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• 제15권4호
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• pp.62-68
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• 2000

Static electricity in electronics manufacturing plants causes the economic loss, yet it is one of the least understood and least recognized effects haunting the industry today. Today's challenge in semiconductor devices is to achieve greater functional density pattern and to miniaturize electronic systems of being more fragile by electrostatic discharges(ESD) phenomena. As the use of automatic handling equipment for static-sensitive semiconductor components is rapidly increased, most manufacturers need to be more alert to the problem of ESD. One of the most common causes of electrostatic damage is the direct transfer of electrostatic charge from the human body or a charged material to the static-sensitive devices. To evaluate the ESD hazards by charged human body and devices, in this paper, characteristics of electrostatic attenuation in domestic semiconductor devices is investigated and the voltage to cause electronic component failures is investigated by field-induced charged device model(FCDM) tester. The FCDM simulator provides a fast and inexpensive test that faithfully represents ESD hazards in plants. Also the results obtained in this paper can be used for the prevention of semiconductor failure from ESD hazards.

• 한국안전학회지
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• 제14권3호
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• pp.69-77
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• 1999

As the use of automatic handling equipment for sensitive semiconductor devices is rapidly increased, manufacturers of electronic components and equipment need to be more alert to the problem of electrostatic discharges(ESD). Semiconductor devices such as IC, LSI, VLSI become a high density pattern of being more fragile by ESD phenomena. One of the most common causes of electrostatic damage is the direct transfer of electrostatic charge from the human body or a charged material to the electrostatic discharge sensitive devices. Accordingly, characteristics of electrostatic attenuation in domestic semiconductor devices is investigated to evaluate the ESD phenomina in the semiconductors in this paper. The required data are obtained by Static Honestmeter. Also The results in this paper can be used for the prevention of semiconductor failure by ESD.

• 한국안전학회지
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• 제17권4호
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• pp.94-100
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• 2002

As the use of automatic handling equipment for sensitive semiconductor devices is rapidly increased, manufacturers of electronic components and equipments need to be more alert to the problem of electrostatic discharges(ESD). In order to analyze damage characteristics of semiconductor device damaged by ESD, this study adopts a new charged-device model(CDM), field-induced charged model(FCDM) simulator that is suitable for rapid, routine testing of semiconductor devices and provides a fast and inexpensive test that faithfully represents ESD hazards in plants. High voltage applied to the device under test is raised by the field of non-contacting electrodes in the FCDM simulator, which avoids premature device stressing and permits a faster test cycle. Discharge current and time are measured and calculated. The characteristics of electrostatic attenuation of domestic semiconductor devices are investigated to evaluate the ESD phenomena in the semiconductors. Also, the field charging mechanism, the device thresholds and failure modes are investigated and analyzed. The damaged devices obtained in the simulator are analyzed and evaluated by SEM. The results obtained in this paper can be used to prevent semiconductor devices form ESD hazards and be a foundation of research area and industry relevant to ESD phenomena.

• 조명전기설비학회논문지
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• 제16권2호
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• pp.113-120
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• 2002

본 논문은 인체에 의해 발생하는 정전기 방전과도전압 파형의 특성에 관한 것으로 정전기 방전전압의 피크 크기와 초기상승부분의 특성에 대한 통계를 분석하기 위해서 여러 가지 실험조건에서 정전기 방전전압을 측정하였다. 정전기 방전전압의 측정에는 주파수대역이 DC∼400[MHz]인 전압측정계를 사용하였으며, 정전기 방전전압의 파형은 전류 파형과 거의 동일하였다. 또한 본 연구에서 제안한 등가회로를 적용한 시뮬레이션결과는 측정결과와 거의 일치하였다. 정전기 방전전압 파형은 접촉 물체의 재질과 접근속도에 크게 영향을 받으며, 빠른 접근일 때가 느린 접근일 때보다 초기상승시간이 짧은 파형으로 나타났다. 손에 의한 정전기 방전전압의 상승시간은 10∼30[ns]로 비교적 길었으나, 크기는 작았다. 반면에 절연손잡이를 갖는 드라이버를 통한 정전기 방전전압 파형은 1[ns]이하의 매우 짧은 상승시간과 매우 큰 피크값을 나타내었다. 본 연구결과는 저전압 소전류인 전자기기의 정전기 장해에 대한 대책의 마련에 응용될 것이다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1721-1723
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• 2001

With the rapid development of electronics industry and information-oriented society, the threat of fields radiated from electrostatic discharges (ESDs) to the electronic equipments is becoming more and more dangerous. To apply a proper protection method this paper presents the results of the measurement of the voltage and current peaks and the rise time of ESD derived from a charged human body under a variety of experimental conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.19-24
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• 2002

Static electricity is an everyday phenomenon. There can be few of us who have not experienced a static shock after sliding across a car seat. Other static nuisance effects include the cling of some fabrics to the body, the sticking of a plastic document cover, or the attraction of dust to a TV or computer screen. However, static electricity has been a serious industrial problem. The age of electronics brought with it new problems associated with static electricity and electrostatic discharge. And, as electronic devices became faster and smaller, their sensitivity to ESD increased. In this work, We are study on the control technique of electo-static discharges using semiconductor circuits. Our circuits are prevented well to electrostatic shock or damages from triboelectric charging in cars everyday life.

• 조명전기설비학회논문지
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• 제16권4호
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• pp.108-116
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• 2002

본 논문은 인체에 대전된 정전기 방전전압 파형의 측정과 특성 분석에 관한 것으로 정전기 고속과도전압 측정기의 동작원리와 설계기법에 대하에 기술하였다. 여러 가지 실험조건에서 인체에 대전된 전하에 의해 발생한 정전기방전전압의 피크값과 상승시간을 분석하였다. 제안된 전압측정계의 주파수대역은 DC-400[MHz]이다. 각 실험조건에서 정전기 방전전압과 전류의 파형은 거의 비슷하였으며, 크기도 비례적 관계를 나타내었다. 빠른 접근일 때가 느린 접근일 때 보다 빠른 초기상승시간의 정전기방전전압이 나타났다. 인체에 의한 직접 방전전압은 비교적 초기상승시간이 10-30[ns]로 길었으나, 크기는 작았다. 반면에 손에 쥔 금속체를 통한 방전전압은 1~3[ns]의 짧은 상승시간을 가지며 피크값은 매우 크게 나타났다. 결국 정전기 방전전압과 전류 파형은 정전기 방전을 일으키는 접촉물체와 접근속도에 깊은 관계가 있음을 알았으며, 본 연구의 결과는 정전기 장해방지장치의 설계를 위한 기초자료로 활용될 것이다.