• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1200-1203
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• 2003

The dielectric breakdown of epoxy composites used for transformers was experimented and then its data were applied to Weibull distribution probability. First of all, speaking of dielectric breakdown properties, the more hardener increased, the stronger breakdown strength became at low temperature because of cross-linked density by the virtue of ester radical. The breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised and the electric field is concentrated. In the case of filled specimens with treating silane, the breakdown strength become much higher. Finally, according to Weibull distribution analysis, reducing breakdown probability of equipment insulation lower than 0.1% level requires the allowable field allowable field intensity values to be kept under 21.5 MV/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.212-217
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• 2002

The dielectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability. First of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical. The breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised and the electric field is concentrated. In the case of filled specimens with treating silane, the breakdown strength become much higher Finally, from the analysis of weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1[%], the applied field value needed to be under 21.5 MV/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.159-163
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• 2003

In this study, the DC dielectric breakdown of epoxy composites used for PCB material was experimented and then its data were simulated by Weibull distribution equation. The more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical, and the breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised, the electric field is concentrated, and the acceleration of electron and the growth of electron avalanche are early accomplished. From the analysis of Weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1[%], the applied field value needed to be under 21.5[kV/mm].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.671-682
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• 1998

Chemical structure and electrical characteristics of 5 commercial crosslinked polyethylenes (XLPE) used as insulating materials for medium voltage distribution power cables in Korea were investigated. It was found that each XLPE shows different properties depending on the type of XLPE. Chemical structural irregularities of pellets change considerably by crossliking reaction, with some irregularities being disappeared after crosslikeng reaction. It was also found through a solvent extraction study that additives such as crosslinking agent and antioxidants act as major source retarding water tree growth. Low molecular weight polyethylene chains plays a different role in water tree growth of XLPE.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.65-65
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• 2009

High temperature silicon carbide Schottky diode was fabricated with Au deposited on poly 3C-SiC thin film grown on p-type Si(100) using atmospheric pressure chemical vapor deposition. The charge transport mechanism of the diode was studied in the temperature range of 300 K to 550 K. The forward and reverse bias currents of the diode increase strongly with temperature and diode shows a non-ideal behavior due to the series resistance and the interface states associated with 3C-SiC. The charge transport mechanism is a temperature activated process, in which, the electrons passes over of the low barriers and in turn, diode has a large ideality factor. The charge transport mechanism of the diode was analyzed by a Gaussian distribution of the Schottky barrier heights due to the Schottky barrier inhomogeneities at the metal-semiconductor interface and the mean barrier height and zero-bias standard deviation values for the diode was found to be 1.82 eV and $s_0$=0.233 V, respectively. The interface state density of the diode was determined using conductance-frequency and it was of order of $9.18{\times}10^{10}eV^{-1}cm^{-2}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.69-72
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• 2008

Decay processes of accumulated charge in e-beam irradiated polymers during elevating temperature are observed using pulsed electro-acoustic measurement system. Since the polymeric materials have many superior properties such as light-weight, good mechanical strength, high flexibility and low cost, they are inevitable materials for spacecrafts. In space environment, however, the polymers sometimes have serious damage by irradiation of high energy charged particles. When the polymers of the spacecraft are irradiated by high energy charged particles, some of injected charges accumulate and remain for long time in the bulk of the polymers. Since the bulk charges sometimes cause the degradation or breakdown of the materials, the investigation of the charging and the decay processes in polymeric materials under change of temperature is important to decide an adequate material for the spacecrafts. By measuring the charge behavior in e-beam irradiated polymer, such as polyimide or polystyrene, it is found that the various accumulation and decay patterns are observed in each material. The results seem to be useful and be helpful to progress in the reliability of the polymers for the spacecraft.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.77-78
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• 2009

We report numerical simulations to investigate of the dependence of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of 10um, but varying the channel width W from 5nm to 5um, and thickness t from 10nm to 30nm. We have shown that $Q_{ON}/Q_{OFF}$ drastically decreases (from ${\sim}2.9{\times}10^4$ to ${\sim}9.8{\times}10^3$) as the channel thickness increases (from 10nm to 30nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed than that in the bottom of control channel.

• Bulletin of the Korean Chemical Society
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• v.30 no.5
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• pp.1061-1066
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• 2009

Two fluoro-substituted 2-pyrazoline derivatives, 1-phenyl-3-(4-methoxyphenyl)-5-(4-fluorophenyl)-2-pyrazoline (1) and 1-phenyl-3-(4-methoxyphenyl)-5-(2-fluoro-phenyl)-2-pyrazoline (2) have been synthesized and characterized by elemental analysis, IR, UV-Vis and fluorescence spectra. The crystal structure of 1 has been determined by X-ray single crystal diffraction. For the two compounds, density functional theory (DFT) calculations of the structures and natural population atomic charge analysis (NPA) have been performed at B3LYP/6-311G** level of theory. By using TD-DFT method, electron spectra of 1 and 2 have been predicted, which are very approximate with the experimental ones. Comparative studies on 1 and 2 indicate that the location change of fluorine atom in 5-position phenyl ring of 2-pyrazoline does not make significant change of geometries and electronic transition bands, but it leads to evident change of atomic charge distributions and peak intensities of UV and fluorescence spectra.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.728-731
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• 2009

We report numerical simulations to investigate of the dependendce of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of $10\;{\mu}m$, but varying the channel width W from 5 nm to $5\;{\mu}m$, and thickness t from 10 nm to 30 nm. We have show that $Q_{ON}/Q_{OFF}$ drastically decreases (from $^{\sim}2.9{\times}10^4$ to $^{\sim}9.8{\times}10^3$) as the channel thickness increases (from 10 nm to 30 nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed then in the bottom of control channel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.329-330
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• 2007

Decay processes of accumulated charge in e-beam irradiated polymers during elevating temperature are observed using pulsed electro-acoustic measurement system. Since the polymeric materials have many superior properties such as light-weight, good mechanical strength, high flexibility and low cost, they are inevitable materials for spacecrafts. In space environment, however, the polymers sometimes have serious damage by irradiation of high energy charged particles. When the polymers of the spacecraft are irradiated by high energy charged particles, some of injected charges accumulate and remain for long time in the bulk of the polymers. Since the bulk charges sometimes cause the degradation or breakdown of the materials, the investigation of the charging and the decay processes in polymeric materials under change of temperature is important to decide an adequate material for the spacecrafts. By measuring the charge behavior in e-beam irradiated polymer, such as polyimide or polystyrene, it is found that the various accumulation and decay patterns are observed in each material. The results seem to be useful and be helpful to progress in the reliability of the polymers for the spacecraft.