• Title/Summary/Keyword: electron lifetime

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High efficiency and long lifetime green OLED with a new electron transport material and a three-component RGB white OLED for full-color display applications.

  • Tokairin, Hiroshi;Kuma, Hitoshi;Yamamoto, Hiroshi;Funahashi, Masakazu;Fukuoka, Kenichi;Hosokawa, Chishio
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1138-1142
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    • 2005
  • We achieved a highly efficient green OLED with an efficiency of 30cd/A by using a new electron transport material and optimizing the device structure. The luminous efficiency was 16.8lm/W at $3000cd/m^2$ and the lifetime was over 60,000hr at an initial luminance of $1000cd/m^2$. Furthermore, we obtained a threecomponent RGB white OLED by using the highly efficient green material. This RGB white OLED shows more excellent color reproducibility for full color displays with color filters, compared to a twocomponent white OLED.

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Carrier lifetime study in GaN-based LEDs: the influence of tunneling and piezoelectric potential (GaN LED에서 tunneling과 piezoelectric potential에 의한 carrier lifetime 연구)

  • 조영달;오은순;김대식
    • Proceedings of the Optical Society of Korea Conference
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    • 2001.02a
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    • pp.48-49
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    • 2001
  • GaN는 wurzite structure를 갖는 wide bandgap III-V족 반도체로서, 청색 반도체 laser diode (LD), light emitting diode (LED)등으로 응용되는 물질이다. InGaN quantum well은 GaN계의 청색 LD, LED 구조에서 활성층으로 사용되기 때문에 이에 대한 광학적 연구가 활발하다. InGaN는 GaN위에 성장하면 strain에 의해 piezoelectric 효과가 크게 나타나는 것으로 알려져 있다. 이러한 piezoelectric potential에 의해 외부에서 voltage가 가해지지 않은 상황에서도 InGaN quantum well내의 electron, hole의 wave function이 비대칭 potential의 영향을 받게된다. (중략)

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Positron Annihilation Study of Vacancy Type Defects in Ti, Si, and BaSrFBr:Eu

  • Lee, Chong Yong
    • Applied Science and Convergence Technology
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    • v.25 no.5
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    • pp.85-87
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    • 2016
  • Coincidence Doppler broadening and positron lifetime methods in positron annihilation spectroscopy has been used to analyze defect structures in metal, semiconductor and polycrystal, respectively. The S parameter and the lifetime (${\tau}$) value show that the defects were strongly related with vacancies. A positive relationship existed between the scanning electron microscope (SEM) images and the positron annihilation spectroscopy (PAS). According to the SEM images and PAS results, measurements of the defects with PAS indicate that it was more affected by the defect than the purity.

Effects of constituents in CNT pastes on the field emission characteristics of carbon nanotubes

  • Yoon, Seung-Il;Kim, Sam-Soo;Lee, Yang-Kyu;Kim, Tae-Kwon;Lee, Dong-Gu
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1206-1209
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    • 2006
  • Carbon nanotubes (CNTs) have been significantly used for the field emitters for display applications. However, the lifetime of CNT emitters which are formed by screen printing technique is not guaranteed yet, because the constituents in CNT paste affect the lifetime of CNTs. The CNT pastes for screen printing are normally composed of organic vehicles (nitro cellulose, ethyl cellulose, etc) and additives (glass frits, ITO, etc) with CNTs. In this study, the effects of constituents in CNT pastes on the lifetime and emission characteristics of CNTs were investigated by thermal and electrical analysis. Use of glass frits worsened the lifetime and electron emission of CNTs. However, an addition of ITO to CNT paste rather improved the lifetime of CNTs. Degradation of CNTs was small when nitro cellulose was used in CNT paste as an organic vehicle.

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The defect nature and electrical properties of the electron irradiated $p^+-n^-$ junction diode (전자 조사된 $p^+-n^-$ 접합 다이오드의 결함 특성과 전기적 성질)

  • 엄태종;강승모;김현우;조중열;김계령;이종무
    • Journal of the Korean Vacuum Society
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    • v.13 no.1
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    • pp.14-21
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    • 2004
  • It is essential to increase the switching speed of power devices to reduce the energy loss because high frequency is commonly used in power device operation these days. In this work electron irradiation has been conducted to reduce the lifetime of minority carriers and thereby to increase the switching speed of a$p^+- n^-$ junction diode. Effects of electron irradiation on the electrical properties of the diode are reported The switching speed is effectively increased. Also the junction leakages and the forward voltage drop which are anticipated to increase are found to be negligible in the $p^+- n^-$ junction diodes irradiated with the optimum energy and dose. The analysis results of DLTS and C-V profiling indicate that the defects induced by electron irradiation in the silicon substrate are donor-like ones which have the energy levels of 0.284 eV and 0.483 eV. Considering all the experimental results in this study, it might be concluded that electron irradiation is a very useful technique in improving the switching speed and thereby reducing the energy loss of $p^+- n^-$ junction diode power devices.

Transport Properties of Conversion Materials for Digital Radiography

  • Kim, Jae-Hyung;Park, Chang-Hee;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.6
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    • pp.250-254
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    • 2007
  • Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.

The Effect of Electron Injection Layer in Organic Electroluminescence Device Efficiency (전자 주입층이 유기EL소자 효율에 미치는 영향)

  • Choi, Kyung-Hoon;Sohn, Byung-Chung;Kim, Young-Kwan
    • Journal of the Korean Applied Science and Technology
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    • v.19 no.4
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    • pp.297-301
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    • 2002
  • We investigated the effect of electron injection layer on the performance of organic light emitting devices (OLEDs). As an electron injection layer, the quinolate metal complexes were used. We optimized the device efficiency by varying the thickness of the quinolate metal complexes layer. The device with 1 nm of the quinolate metal complexes layer showed significant enhancement of the device performance and device lifetime. We also compared the effect of 8-hydroxyquinolinolatolithium (Liq) with that of bis(8-quinolinolato)-zinc ($Znq_{2}$) and 8-hydroxyquinolinolatosodium (Naq) as an electron injection layer. As a result, Liq is considered as a better materials for the electron injection layer than $Znq_{2}$ and Naq.

Device characteristics of blue phosphorescent organic light-emitting diodes depending on the electron transport materials

  • Lee, Hyun-Koo;Ahn, Hyuk;Lee, Chang-Hee
    • Journal of Information Display
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    • v.12 no.4
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    • pp.219-222
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    • 2011
  • Iridium-(III)-bis[(4,6-di-fluorophenyl)-pyridinate-N,$C^2$' ]picolinate-based blue phosphorescent organic light-emitting diodes with different electron transport materials were fabricated. Each electron transport material had different electron mobilities and triplet energies. The device with 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene had the highest external quantum efficiency (20.1%) and luminous current efficiency (33.1 cd/A) due to its high electron mobility and triplet energy. The operational stability of each device was also compared with that of the others. The device with 2,2',2"(1,3,5-benzenetriyl)tris-(1-phenyl-1H-benzimidazole) was found to have a longer lifetime than the other devices.

Elucidation of photo-induced electron transfer in a loop-forming peptide: Dye-Ala-Gly-Gln-Tyr

  • Lee, Hwiin;Kim, Jeongyun;Kwon, Yong-Uk;Lee, Minyung
    • Rapid Communication in Photoscience
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    • v.4 no.3
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    • pp.59-62
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    • 2015
  • We investigated photo-induced electron transfer (PET) in a dye-labeled peptide, fluorophore-Ala-Gly-Gln-Tyr, employing time-resolved fluorescence. As an effort to develop new functional dyes, we studied an acriflavine derivative for the electron-acceptor in the excited state from tyrosine, an electrondonor in the ground-state. The pH dependence of the fluorescence lifetime of the model peptide indicates that electron transfer between the excited dye and tyrosine occurs when the tyrosine is deprotonated. The proton-coupled electron transfer appears to be sequential rather than concerted. We also report direct time measurements on the end-to-end loop formation processes of the peptide in water.

Exciton Dynamics and Device Lifetime of Phosphorescent dye doped Polymer Light Emitting Diodes

  • Kim, Jang-Joo;Jeong, W.I.;An, Cheng-Guo;Kang, J.W.
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.166-166
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    • 2006
  • The photoluminescence (PL) efficiency of $Ir(ppy)_{3}$:PVK is lower than $Ir(ppy)_{3}$:CBP for the whole range of doping concentration and this low PL efficiency can be a reason of the lower efficiency of PhPLED than PhOLED. The lower efficiency is originated from the large bi-excitonic quenching such as the triplet-triplet annihilation. The PhPLEDs showed very short lifetime. The short lifetime was found to be originated from the instability of the doubly reduced $Ir(ppy)_{3^{-2}}$. The double reduction takes place because of the low electron mobility of PVK and large energy difference of LUMO level between PVK and $Ir(ppy)_{3}$.

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