Exciton Dynamics and Device Lifetime of Phosphorescent dye doped Polymer Light Emitting Diodes

  • Kim, Jang-Joo (Department of Materials Science and Engineering, OLED Center, Seoul National University) ;
  • Jeong, W.I. (Department of Materials Science and Engineering, OLED Center, Seoul National University) ;
  • An, Cheng-Guo (Department of Materials Science and Engineering, OLED Center, Seoul National University) ;
  • Kang, J.W. (Department of Materials Science and Engineering, OLED Center, Seoul National University)
  • Published : 2006.10.13

Abstract

The photoluminescence (PL) efficiency of $Ir(ppy)_{3}$:PVK is lower than $Ir(ppy)_{3}$:CBP for the whole range of doping concentration and this low PL efficiency can be a reason of the lower efficiency of PhPLED than PhOLED. The lower efficiency is originated from the large bi-excitonic quenching such as the triplet-triplet annihilation. The PhPLEDs showed very short lifetime. The short lifetime was found to be originated from the instability of the doubly reduced $Ir(ppy)_{3^{-2}}$. The double reduction takes place because of the low electron mobility of PVK and large energy difference of LUMO level between PVK and $Ir(ppy)_{3}$.

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