• 제목/요약/키워드: electrochemical etching

검색결과 202건 처리시간 0.022초

동압베어링의 그르브 가공용 양방향 펄스 파워 전해가공시스템 개발 (Development of Bidirectional Pulse Power Electrochemical Etching System for the Groove Manufacturing of the Dynamic Bearings)

  • 이용근
    • 전기학회논문지P
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    • 제54권4호
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    • pp.224-229
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    • 2005
  • This paper presents a bidirectional pulse power electrochemical etching system for groove manufacturing of the dynamic bearings. To manufacture the dynamic bearing for the groove, it is very important to consider the depth and roughness. If the precision of the groove is not exact, we can not get the desirable performance for the target of the dynamic bearing. To make the groove of bearing precise, we propose the method of electrochemical etching system. In order to design the depth and roughness exactly, the bidirectional pulse power converter is proposed. With the bidirectional pulse power converter, we obtain the condition and the parameters of converter such as frequency, duty ratio, time, temperature, velocity, pressure and so on. In this paper, we get the experimental results to verify the precise groove manufacturing.

전기화학적 에칭을 이용한 스테인리스 스틸의 표면 개질 (Surface Modification Method of Stainless Steel using Electrochemical Etching)

  • 이찬;김준원
    • 한국정밀공학회지
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    • 제31권4호
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    • pp.353-358
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    • 2014
  • This paper reports a simple, yet effective 1-step surface modification method for stainless steel. Electrochemical etching in dilute Aqua Regia forms hierarchical micro and nanoscale structure on the surface. The surface becomes highly hydrophobic (${\sim}150^{\circ}$) as a result of the etching in terms of static contact angle (CA). However the liquid drops easily pinned on the surface because of high contact angle hysteresis (CAH), which is called a "petal effect": The petal effect occur because of gap between surface microstructures, despite of intrinsic hydrophobicity of the base material. The pore size and period of surface structure can be controlled by applied voltage during the etching. This method can be applied to wide variety of industrial demand for surface modification, while maintaining the advantageous anti-corrosion property of stainless steel.

포토에칭법에 의한 Digitron용 Grid제조에 관한 연구 (The Fabrication of Digitron Grid by Photoetching Process)

  • 김만;이종권
    • 한국표면공학회지
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    • 제29권1호
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    • pp.60-72
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    • 1996
  • A photoetching process is widely used for small and high precision parts in machinery, electronic and semi-conductor industries. One of the high precision parts, grid is very important part of digitron which use electron display, and it is fabricated by only photoetching process because of high precision. In this study, to develop high precision digitron grid, characteristics of etching solution were investigated with electrochemical test, that was potentiodynamic test and immersion test in the ferric chloride solution and added some additives. Based on the electrochemical etching test, grid was fabricated by continuous photoetching process at various etching condition. From the result of measured line width and etching depth under-cut and etching factor were calculated. For the fabrication of 25$\mu\textrm{m}$ line width, optimal etching condition was etching temperature 40~$45^{\circ}C$, spray pressure 1.5kg/$\textrm{cm}^2$ and etching time 3~4min.

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Enhanced Activity for Oxygen Evolution Reaction of Nanoporous IrNi thin film Formed by Electrochemical Selective Etching Process

  • Park, Shin-Ae;Shim, Kyubin;Kim, Kyu-Su;Moon, Young Hoon;Kim, Yong-Tae
    • Journal of Electrochemical Science and Technology
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    • 제10권4호
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    • pp.402-407
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    • 2019
  • Water electrolysis is known as the most sustainable and clean technology to produce hydrogen gas, however, a serious drawback to commercialize this technology is due to the slow kinetics in oxygen evolution reaction (OER). Thus, we report on the nanoporous IrNi thin film that reveals a markedly enhanced OER activity, which is attained through a selective etching of Os from the IrNiOs alloy thin film. Interestingly, electrochemical selective etching of Os leads to the formation of 3-dimensionally interconnected nanoporous structure providing a high electrochemical surface area (ECSA, 80.8 ㎠), which is 90 fold higher than a bulk Ir surface (0.9 ㎠). The overpotential at the nanoporous IrNi electrode is markedly lowered to be 289 mV at 10 mA cm-2, compared with bulk Ir (375 mV at 10 mA cm-2). The nanoporous IrNi prepared through the selective de-alloying of Os is promising as the anode material for a water electrolyzer.

미세 레이저 가공의 표면코팅 후 전해 에칭 (Laser Micro Machining and Electrochemical Etching After Surface Coating)

  • 김태풍;박민수
    • 한국정밀공학회지
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    • 제30권6호
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    • pp.638-643
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    • 2013
  • Laser beam machining (LBM) is fast, contactless and able to machine various materials. So it is used to cut metal, drill holes, weld or pattern the imprinted surface. However, after LBM, there still leave burrs and recast layers around the machined area. In order to remove these unwanted parts, LBM process often uses electrochemical etching (ECE). But, the total thickness of workpiece is reduced because the etching process removes not only burrs and recast layers, but also the entire surface. In this paper, surface coating was performed using enamel after LBM on metal. The recast layer can be selectively removed without decreasing total thickness. Comparing with LBM process only, the surface quality of enamel coating process was better than that. And edge shape was also maintained after ECE.

TMAH/IPA/Pyrazine 수용액에서 전기화학적 식각정지법을 이용한 Si 기판의 미세가공 (Micromachining of Si substrate Using Electrochemical Etch-Stop in Aqueous TMAH/IPA/pyrazine Solution)

  • 박진성;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.397-400
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    • 1997
  • This paper presentes the characteristics of Si anisotropic etching and electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution. (100) Si etching rate of 0.747 $\mu\textrm{m}$/min which faster 86% than TMAH 25 wt.%/IPA 17 vol.% solution was obtained using best etching condition at TMAH 25 wt.%/IPA 17 vol.%/pyrazine 0.1 g and the etching rate of (100) Si was decreased with more additive quantity of pyrazine. I-V curve of p-type Si in TMAH/IPA/pyrazine was obtained. OCP(Open Circuit Potential) and PP(Passivation Potential) were -2 V and -0.9 V, respectively. Si diaphragms were obtained by electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution.

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전해 프로세스에 의한 미세축 가공시 형상 및 직경 제어 (Shape and Diameter Control of Microshafts in Electrochemical Process)

  • 임영모;임형준;김수현
    • 한국정밀공학회지
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    • 제18권5호
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    • pp.50-56
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    • 2001
  • Fabrication methods are shown to produce slender and cylindrical tungsten shafts by electrochemical etching. The shape of microshatf formed by electrochemical etching is determined by the combination of two conflicting factors, i.e., initial shape and diffusion layer. We can obtain a desirable shaft profile by adjusting the thickness gradient of diffusion layer. The diameter of microshaft is controlled by mathematical model based on relation between process parameters and diameter.

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금 나노입자 촉매를 이용한 단결정 실리콘의 전기화학적 식각을 통한 무반사 특성 개선 (Improved Antireflection Property of Si by Au Nanoparticle-Assisted Electrochemical Etching)

  • 고영환;주동혁;유재수
    • 한국진공학회지
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    • 제21권2호
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    • pp.99-105
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    • 2012
  • 금 나노입자 촉매를 이용한 전기화학적 식각법에 의해 실리콘 표면에 짧은 시간의 효과적인 텍스쳐링을 통한 나노구조를 제작하여 무반사 특성을 조사하였다. 실험을 위해, 열증발증착법과 급속열처리법을 이용하여 단결정 실리콘 표면에 20 nm에서 150 nm 크기의 금 나노입자를 형성하였고, 습식식각을 위해 금 나노입자가 코팅된 실리콘을 과산화수소와 불화수소가 포함된 식각용액에 1분 동안 담가두었다. 전기화학적 습식식각을 확인하기위해, 금 나노입자가 코팅된 실리콘을 음극으로 각각 -1 V와 -2 V의 전압을 인가하여 식각깊이와 반사율 스펙트럼을 비교하였다. 태양광 스펙트럼(air mass 1.5)을 고려하여 태양가중치 반사율을 계산한 결과, 전압을 인가하지 않고 식각된 실리콘 표면의 반사율이 25.8%인 반면, -2 V의 전압을 인가하여 8.2%로 반사율을 크게 줄일 수 있었다.

초박형 태양전지의 Porous Si Layer Transfer 기술 적용을 위한 전기화학적 실리콘 에칭 (Electrochemical Etching of Silicon in Porous Silicon Layer Transfer Process for Thin Film Solar Cell Fabrication)

  • 이주영;한원근;이재호
    • 마이크로전자및패키징학회지
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    • 제16권4호
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    • pp.55-60
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    • 2009
  • 불산과 에탄올 혼합용액에서 전기화학적 에칭을 통하여 다공성 실리콘 층을 제작하였다. 에칭 시 인가된 초음파의 주파수, 전류밀도, 에칭시간의 변화에 따른 다공성 실리콘 층의 변화를 확인하였다. 초음파를 가해주지 않은 시편은 표면에 특별한 변화가 일어나지 않았으나, 초음파 진동자의 주파수가 40 kHz와 130 kHz인 초음파 발생조에서 실험한 시편을 관찰한 결과, 가해준 초음파의 주파수가 높을수록 다공성 실리콘 층의 기공의 크기가 더 커지고 실리콘 표면에서의 에칭이 더 균일하게 일어났다. 후면접촉 에칭조와 current shield를 이용한 결과 다공성 실리콘 층 전면에 걸쳐 균일하게 기공이 발생하였다. 다공성 실리콘 층의 기공의 크기는 전류밀도가 증가함에 따라 함께 증가하였고, 에칭 시간에는 영향을 받지 않았다.

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