• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.8-9
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• 2006

Hafnium oxide ($HfO_2$) thin films were deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$. Prior to the deposition of $HfO_2$ films, a thin Hf ($10\;{\AA}$) metal layer was deposited. Deposition temperature of $HfO_2$ thin film was $350^{\circ}C$ and its thickness was $150\;{\AA}$. Samples were then annealed using furnace heating to temperature ranges from 500 to $900^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Thermally evaporated $3000\;{\AA}$-thick AI was used as top electrode. In this work, We study the interface characterization of $HfO_2$/Hf/Si MOS capacitor depending on annealing temperature. Through AES(Auger Electron Spectroscopy), capacitance-voltage (C-V) and current-voltage (I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf meta1 layer in our structure effective1y suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.

• Journal of Korean Vacuum Science & Technology
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• 제4권3호
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• pp.73-77
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• 2000

Single crystal and polycrystalline Si thin films were doped with phosphorus by a 2-zone diffusion method to develop the low-resistivity polycrystalline Si electrode for a hemispherical grain. Solid phosphorus source was used in order to achieve uniformly and highly doped surface region of polycrystalline Si films having rough surface morphology. In case of 2-zone diffusion method, it is proved that the heavy doping near the surface area can be achieved even at a relatively low temperature. SIMS analysis revealed that phosphorus doping concentration in case of using solid P as a doping source was about 50 times as that of phosphine source at 750$^{\circ}C$. Also, ASR analysis revealed that the carrier concentration was about 50 times as that of phosphine. In order to evaluate the electrical characteristics of doped polycrystalline Si films for semiconductor devices, MOS capacitors were fabricated to measure capacitance of polycrystalline Si films. In ${\pm}$2 V measuring condition, Si films, doped with solid source, have 8% higher $C_{min}$ than that of unadditional doped Si films and 3% higher $C_{min}$ than that of Si films doped with $PH_3$ source. The leakage current of these films was a few fA/${\mu}m^2$. As a result, a 2-zone diffusion method is suggested as an effective method to achieve highly doped polycrystalline Si films even at low temperature.

• 한국분말재료학회지
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• 제26권3호
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• pp.231-236
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• 2019

Ni hydroxides ($Ni(OH)_2$) are synthesized on Ni foam by varying the hexamethylenetetramine (HMT) concentration using an electrodeposition process for pseudocapacitor (PC) applications. In addition, the effects of HMT concentration on the $Ni(OH)_2$ structure and the electrochemical properties of the PCs are investigated. HMT is the source of amine-based $OH^-$ in the solution; thus, the growth rate and morphological structure of $Ni(OH)_2$ are influenced by HMT concentration. When $Ni(OH)_2$ is electrodeposited at a constant voltage mode of -0.85 V vs. Ag/AgCl, the cathodic current and the number of nucleations are significantly reduced with increasing concentration of HMT from 0 to 10 mM. Therefore, $Ni(OH)_2$ is sparsely formed on the Ni foam with increasing HMT concentration, showing a layered double-hydroxide structure. However, loosely packed $Ni(OH)_2$ grains that are spread on Ni foam maintain a much greater surface area for reaction and result in the effective utilization of the electrode material due to the steric hindrance effect. It is suggested that the $Ni(OH)_2$ electrodes with HMT concentration of 7.5 mM have the maximum specific capacitance (1023 F/g), which is attributed to the facile electrolyte penetration and fast proton exchange via optimized surface areas.

• 센서학회지
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• 제27권6호
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• pp.397-402
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• 2018

Proper seat design is critical to the safety, comfort, and ergonomics of automotive driver's seats. To ensure effective seat design, quantitative methods should be used to evaluate the characteristics of automotive seats. This paper presents a system that is capable of simultaneously monitoring body pressure distribution and surface deformation in a textile material. In this study, a textile-based capacitive sensor was used to detect the body pressure distribution in an automotive seat. In addition, a strain gauge sensor was used to detect the degree of curvature deformation due to high-pressure points. The textile-based capacitive sensor was fabricated from the conductive fabric and a polyurethane insulator with a high signal-to-noise ratio. The strain gauge sensor was attached on the guiding film to maximize the effect of its deformation due to bending. Ten pressure sensors were placed symmetrically in the hip area and six strain gauge sensors were distributed on both sides of the seat cushion. A readout circuit monitored the absolute and relative values from the sensors in realtime, and the results were displayed as a color map. Moreover, we verified the proposed system for quantifying the body pressure and fabric deformation by studying 18 participants who performed three predefined postures. The proposed system showed desirable results and is expected to improve seat safety and comfort when applied to the design of various seat types. Moreover, the proposed system will provide analytical criteria in the design and durability testing of automotive seats.

• 대한금속재료학회지
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• 제50권8호
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• pp.613-618
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• 2012

We report on electrical and mechanical properties of silicon nitride ($SiN_x$) films deposited by a plasma enhanced chemical vapor deposition (PECVD) method at $200^{\circ}C$ from $SiH_4$ highly diluted in $N_2$. The films were also prepared from $SiH_4$ diluted in He for comparison. The $N_2$ dilution was also effective in improving adhesion of the $SiN_x$ films, fascilitating construction of thin film transistors (TFTs). Metal-insulator-semiconductor (MIS) and Metal-insulator-Metal (MIM) structures were used for capacitance-voltage (C-V) and current-voltage (I-V) measurements, respectively. The resistivity and breakdown field strength of the $SiN_x$ films from $N_2$-diluted $SiH_4$ were estimated to be $1{\times}10^{13}{\Omega}{\cdot}cm$, 7.4 MV/cm, respectively. The MIS device showed a hysteresis window and a flat band voltage shift of 3 V and 0.5 V, respectively. The TFTs fabricated by using these films showed a field-effect mobility of $0.16cm^2/Vs$, a threshold voltage of 3 V, a subthreshold slope of 1.2 V/dec, and an on/off ratio of > $10^6$.

• 한국표면공학회지
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• 제55권1호
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• pp.32-37
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• 2022

In a carbon-zero social atmospher, research is underway to reduce the use of fossil fuels. Interest in cleaner energy sources and their storage system is growing, and among them, research on effective energy storage is being actively conducted. Energy storage system(ESS) can be divided into secondary batteries, fuel cells, and capacitors, and the superiority of energy density of secondary batteries has a dominent influence on the ESS market. However, as problems with secondary batteries, charge/discharge speed, safety, and deterioration of electrodes are being highlighted. In this study, an electrode for supercapacitor with superior charge/discharge speed and specific capacitance is manufactured. The manufactured spinel nickel cobalt electrodes had specific capacitances of 1018.8 F/g, 690.8 F/g, and 475.1 F/g at 1 A/g in 1 M KOH electrolyte, and shows a performance retention rate of 77.48%, 63.30%, and 58.16% after 2000cycles at 7 A/g.

• 전자공학회논문지
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• 제51권10호
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• pp.80-86
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• 2014

본 연구를 통해서 정전용량 방식의 이차원 마이크로볼로미터를 위한 저잡음 신호취득 회로를 연구하였다. 잡음 대역폭이 매우 낮고 픽셀 면적이 작기 때문에 비 적분형 방식의 간단하고 효과적인 픽셀 단위의 회로를 사용했다. 또한, 가장 문제가 되는 kT/C 잡음을 줄이고 전력소모를 낮추기 위해 새로운 CDS 방식을 열 단위의 회로에 사용했다. 제안하는 회로는 $0.35-{\mu}m$ 2-poly 4-metal CMOS 공정을 이용하여 설계했고, 마이크로볼로미터의 픽셀 크기는 $50{\mu}m{\times}50{\mu}m$이다. 제안하는 신호취득회로는 볼로미터의 kT/C 잡음 등을 포함한 저주파 잡음을 효과적으로 제거하며, 제작된 칩에 대한 잡음 측정을 통하여 이를 검증하였다. 제안하는 회로는 간단한 신호취득 회로에 비해 그 잡음을 30 %에서 55 % 이하까지 개선할 수 있으며, 전체 감지시스템의 잡음등가온도차(NETD)를 21.5 mK 정도로 낮출 수 있다.

• 한국정보통신학회논문지
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• 제9권5호
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• pp.1045-1051
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• 2005

한의학적 침구치료원리에 근거한 새로운 자극방식을 통해 치료효과를 증대시킬 수 있는 구강안면 동통 진단/치료기를 개발하였다. 이 새로운 DDTS-1 치료기는 기존방식과는 달리 캐패시터를 이용하여 동통발생 원인인 인체의 과잉 이온전하를 흡수하여 치료하는 방식이다. 과도한 이온전하를 흡수하여 치료하기 위한 최적 파라미터 추출은 실험을 통해, 캐패시터의 충방전을 제어하기 위한 제어신호의 최적의 주파수는 6hz, 캐패시턴스는 $0.1\~0.33{\mu}F$으로 결정하였다. 임상실험을 통해 시스템의 검증을 위해 치성동통환자, 3차 신경통환자 등을 대상으로 정상부위와 이상부위의 전위를 측정하였다. 그 결과, 기존 자극기는 치료전과 후의 전위차가 매우 작았으며 DDTS-1은 생체전위차가 동일하거나 비슷해지는 뚜렷한 차이를 보였다. 따라서, DDTS-1의 자극방식이 기존의 전기적 자극방식보다 치료효과 측면에서 더 효과적이며 이는 캐패시터를 이용한 인체 이온전하 흡수방식의 타당성을 검증하였다. 즉, DDTS-1 치료기의 자극방식에 따른 동통조절기전의 이론적 타당성을 검증하고 성능 및 신뢰성을 검증하였다.

• 한국진공학회지
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• 제16권4호
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• pp.244-249
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• 2007

분동식압력계는 정밀한 압력 측정의 기준 장비로 널리 사용되고 있다. 그것은 분동압력계가 견고하고 정확하며 이동이 간편하고 압력의 정의를 물리적으로 구현할 수 있기 때문이다. 기본적으로 분동식압력계는 분동과 피스톤/실린더 장치로 구성되며 실린더 안에 직경이 꼭 맞는 피스톤이 수직으로 삽입된 구조를 갖고 있다. 측정하려는 압력은 피스톤 아래에 작용하여 윗방향 힘을 발생시키고 피스톤 위에 얹혀 있는 분동에 의해 발생하는 아랫방향 힘과 평형을 이루게 된다. 이때 피스톤 자체의 하중은 항상 작용하므로 분동식압력계는 보통 10 kPa이상의 압력 범위에서 주로 사용된다. 기존의 방식은 피스톤 아래의 높은 압력을 기준으로 사용하지만 본 방식은 피스톤 주위의 낮은 압력을 기준압력으로 사용하여 보다 더 낮은 압력의 측정이 가능하다. 본 논문에서는 이를 효율적으로 구현한 새로운 장치를 소개하고 실제로 1.33 kPa, 13.3 kPa 두 측정범위를 갖는 정밀한 저진공 게이지(MKS, CDG)를 교정, 평가한 결과에 대해서 기술하였다.

• 공업화학
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• 제21권3호
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• pp.265-271
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• 2010

활성탄에 $TiO_2$를 졸-겔 방법으로 코팅하여 탄소복합전극을 제조하였고 축전식 이온제거(Capacitive deionization : CDI) 과정에서 나타난 제염효과에 대하여 고찰하였다. 본 연구에서 $TiO_2$는 전극의 젖음성을 향상시켜 전극과 전해질의 접촉 저항을 감소시키고, 전기이중층 흡착량을 증가시킬 수 있으므로 CDI전극재로 활성탄에 코팅하였다. TEM, XRD, XPS로 활성탄에 $TiO_2$가 코팅되었는지 확인하였다. 순환전류전압법과 impedance측정 결과 탄소복합전극이 탄소전극보다 전기이중층 용량이 증가하였으며, 전극의 확산저항이 줄어든 것을 확인하였다. 또한 이온제거율을 확인하기 위한 충전-방전 및 이온전도도 평가 결과 전해질 NaCl $1000\;{\mu}S/cm$에서 탄소복합전극이 탄소전극보다 39% 더 많은 이온을 제거하는 것을 확인하였다. 본 연구 결과 CDI용 전극재료 $TiO_2$가 코팅된 탄소복합전극이 탄소전극보다 효과적인 제염효과를 보임을 확인하였다.