• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.376-381
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• 2014

We present a CMOS rail-to-rail class-AB amplifier using dynamic current biasing to improve the delay response of the error amplifier in a low-dropout (LDO) regulator, which is a building block for a wireless power transfer receiver. The response time of conventional error amplifiers deteriorates by slewing due to parasitic capacitance generated at the pass transistor of the LDO regulator. To enhance slewing, an error amplifier with dynamic current biasing was devised. The LDO regulator with the proposed error amplifier was fabricated in a $0.35-{\mu}m$ high-voltage BCDMOS process. We obtained an output voltage of 4 V with a range of input voltages between 4.7 V and 7 V and an output current of up to 212 mA. The settling time during line transient was measured as $9{\mu}s$ for an input variation of 4.7-6 V. In addition, an output capacitor of 100 pF was realized on chip integration.

• Journal of Sensor Science and Technology
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• v.33 no.1
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• pp.12-17
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• 2024

Floating inverter amplifiers (FIAs) have recently garnered considerable attention owing to their high energy efficiency and inherent resilience to input common-mode voltages and process-voltage-temperature variations. Since the voltage gain of a simple FIA is low, it is typically cascaded or cascoded to achieve a higher voltage gain. However, cascading poses stability concerns in closed-loop applications, while cascoding limits the output swing. This study introduces a gain-enhanced FIA that features cross-coupled body biasing. Through simulations, it is demonstrated that the proposed FIA designed using a 28-nm complementary metal-oxide-semiconductor technology with a 1-V power supply can achieve a high voltage gain (> 90 dB) suitable for dynamic open-loop applications. The proposed FIA can also be used as a closed-loop amplifier by adjusting the amount of positive feedback due to the cross-coupled body biasing. The capability of achieving a high gain with minimum-length devices makes the proposed FIA a promising candidate for low-power, high-speed sensor interface systems.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.168-172
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• 2005

In this paper, we present a new adaptive biasing scheme for CMOS op-amps. The designed circuit has been used in an Operational Transconductance Amplifier (OTA) with ${\pm}1$ V power supply, and it has improved the positive and negative slew rates from 2.92 V/msec to 1242 V/msec and from 1.56 V/msec to 133 V/msec respectively, while maintaining all the small-signal performance parameter values the same as that without adaptive biasing (as expected), however, there was a marginal decrease of the dynamic range. The most useful features of the proposed circuit are that it uses a very low number of components (thus not creating severe area penalty) and requires only 25 nW of extra stand-by power.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.128-136
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• 2001

This paper evaluates the performance of an optic link in a frequency conversion based fiber-radio system. The proposed link structure simplifies a BS(base station) via making the MMW(millimeter wave) optical pilot tone generated in the CS(control station) be used in the uplink as well as in the downlink. To acquire the optical pilot tone, an EOM(electro-optic modulator) in the CS is biased in three different ways, i.e., MAB(maximum bias), MIB(minimum bias), QB(quadrature bias). We, depending on the biasing of the EOM, evaluate the link performances in two cases; one is for constant laser source power and the other for constant received DC optical power at a PD(photo detector). Based on the simulation results on the downlink CNR and the uplink SFDR(spurious free dynamic range), we finally deduce the effective EOM biasing for each case.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2008.04a
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• pp.566-568
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• 2008

An E-OPMT(Electronically-controllable OPMT) was developed as an alternative of OPMT which could adjust the direction of the generated guided waves in a plate manually. The key idea of controlling the wave direction electronically is based on a few sets of axisymmetric figure-of-eight coils and the magnet which is located for making static omni-directionally biasing magnetic field over the patch. However, in order to explain wave phenomenon generated by this transducer, a new approach is required because there are various combinations between static biasing magnetic field and dynamic actuating magnetic field on the patch, not similar to OPMT. In this paper, the experiments were performed to understand characteristics of E-OPMT and the new theoretical analysis was set up for explaining the result.

• Journal of Magnetics
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• v.7 no.1
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• pp.9-13
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• 2002

The dependences of microscopic magnetic domain on film thickness in unidirectional and isotropic exchange-coupled NiO/NiFe bilayers were investigated by magnetic force microscopy to better understand for exchange biasing. As NiO thickness increases, microscopic domain structure of unidirectional biased film changed to smaller and more complicated domains. However, for isotropic-coupled film a new cross type domain appeared with out-of plane magnetization orientation. The density of the cross domain is proportional to exchange biasing fields and the fact that the domain was originated by the strongest exchange coupling region was confirmed from the dynamic domain configuration during a magnetization cycle.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.5
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• pp.58-65
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• 2015

This paper presents the design of an implantable stimulation IC intended for neural prosthetic devices using $0.18-{\mu}m$ standard CMOS technology. The proposed single-channel biphasic current stimulator prototype is designed to deliver up to 1 mA of current to the tissue-equivalent $10-k{\Omega}$ load using 12.8-V supply voltage. To utilize only low-voltage standard CMOS transistors in the design, transistor stacking with dynamic gate biasing technique is used for reliable operation at high-voltage. In addition, active charge balancing circuit is used to maintain zero net charge at the stimulation site over the complete stimulation cycle. The area of the total stimulator IC consisting of DAC, current stimulation output driver, level-shifters, digital logic, and active charge balancer is $0.13mm^2$ and is suitable to be applied for multi-channel neural prosthetic devices.

• Journal of Sensor Science and Technology
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• v.27 no.3
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• pp.160-164
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• 2018

In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of the CMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operated under various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated from the cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illumination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is $140(H){\times}180(V)$ and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using $0.35{\mu}m$ 2-poly 4-metal CMOS standard process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.42-42
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• 2001

본 논문은 주파수 천이를 적용시킨 광무선(fiber-radio)시스템의 광링크부에 대한 성능분석을 한다. 제시된 광링크부는 CS(control station)에서 얻어진 밀리미터파 대역 광파일럿톤(optical pilot tone)이 하향링크뿐 아니라 상향링크에도 공급되도록 하여 BS(base station)의 구조를 간단히 하였다. 광파일럿톤을 얻기 위해 CS의 EOM(electro-optic modulator)을 MAB(maximum bias), MIB(minimum bias), QB(quadrature bias)로 바이어스를 달리할 수 있으며 각각의 경우에 따라 링크의 성능을 분석한다. 분석은 레이저 광원의 전력이 일정한 경우와 PD(photo detector)에 수신되는 광 DC 전력이 일정한 경우에 대해서 행하여지며 각 경우에 대해서 최적의 하향링크 CNR 및 상향링크 SFDR(spurious free dynamic range)을 얻기 위해 효과적인 바이어스 방식을 제시한다

• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.71-75
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• 2019

This paper proposes the extension of the dynamic range in complementary metal oxide semiconductor (CMOS) image sensors (CIS) using switching operation of in-pixel inverter. A CMOS inverter is integrated in each unit pixel of the proposed CIS for switching operations. The n+/p-substrate photodiode junction capacitances are added to each unit pixel. When the output voltage of the photodiode is less than half of the power supply voltage of the CMOS inverter, the output voltage of the CMOS inverter changes from 0 V to the power supply voltage. Hence, the output voltage of the CMOS inverter is adjusted by changing the supply voltage of the CMOS inverter. Thus, the switching point is adjusted according to light intensity when the supply voltage of the CMOS inverter changes. Switching operations are then performed because the CMOS inverter is integrated with in each unit pixel. The proposed CIS is composed of a pixel array, multiplexers, shift registers, and biasing circuits. The size of the proposed pixel is $10{\mu}m{\times}10{\mu}m$. The number of pixels is $150(H){\times}220(V)$. The proposed CIS was fabricated using a $0.18{\mu}m$ 1-poly 6-metal CMOS standard process and its characteristics were experimentally analyzed.